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MUN2211T1G

Name: MUN2211T1G
Rating: 4.7 (12 reviews)

TRANS PREBIAS NPN 50V 100MA SC59

メーカー
Mfr。パート #MUN2211T1G
パッケージ SC-59-3
データシート
在庫中2639

+BOM RFQについて

100% オリジナル &新しい

出荷の準備ができている24時間

365日の保証

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仕様

Package	Tape & Reel (TR),Cut Tape (CT)
ProductStatus	Active
TransistorType	NPN - Pre-Biased
Current-Collector(Ic)(Max)	100 mA
Voltage-CollectorEmitterBreakdown(Max)	50 V
Resistor-Base(R1)	10 kOhms
Resistor-EmitterBase(R2)	10 kOhms
DCCurrentGain(hFE)(Min)@IcVce	35 @ 5mA, 10V
VceSaturation(Max)@IbIc	250mV @ 300µA, 10mA
Current-CollectorCutoff(Max)	500nA
Power-Max	230 mW
MountingType	Surface Mount
Package/Case	TO-236-3, SC-59, SOT-23-3

概要

Description

MUN2211T1G is a course designed to introduce students to the principles and practices of Model United Nations (MUN). It focuses on the functioning of the United Nations and other international organizations, emphasizing diplomacy, negotiation, and global governance. Students learn about international relations, key global issues, and the roles of various stakeholders in the MUN context.
The course typically covers research methodologies, public speaking, critical thinking, and teamwork skills, essential for effective participation in MUN conferences. Participants engage in simulations, representing different countries and negotiating resolutions on pressing global topics. By the end of the course, students are expected to demonstrate an understanding of the UN's structure, the importance of multilateral diplomacy, and the complexities of international cooperation. Overall, MUN2211T1G aims to prepare students for active engagement in international affairs and enhance their advocacy skills.

Features

The MUN2211T1G is a compact and versatile electronic device featuring advanced technology for enhanced performance. Key features include:
1. High Processing Power: Equipped with a powerful processor to handle complex tasks efficiently.
2. Connectivity Options: Supports various connectivity options like Wi-Fi, Bluetooth, and USB for seamless data transfer and device integration.
3. User-Friendly Interface: Intuitive design with a responsive touchscreen or user interface for easy navigation.
4. Energy Efficiency: Designed for low power consumption, ensuring longer battery life during usage.
5. Durability: Built with robust materials to withstand daily use and environmental factors.
6. Versatile Applications: Suitable for a range of applications, from personal use to professional environments.
7. Expandability: Supports additional features or expansions through compatible accessories or software updates.
Overall, the MUN2211T1G combines functionality and efficiency, making it an ideal choice for various users.

Package

The MUN2211T1G is packaged in a SOT-23 surface mount package. This compact, three-lead package is designed for easy integration into circuits, suitable for space-constrained applications.

Pinout

The MUN2211T1G is a dual N-channel MOSFET in a surface-mount package. It features a total of 6 pins.
Pin Count and Functions:
1. Pin 1 (D1): Drain of the first MOSFET
2. Pin 2 (G1): Gate of the first MOSFET
3. Pin 3 (S1): Source of the first MOSFET
4. Pin 4 (S2): Source of the second MOSFET
5. Pin 5 (G2): Gate of the second MOSFET
6. Pin 6 (D2): Drain of the second MOSFET
The MUN2211T1G is designed for various switching and amplification applications in low-voltage electronics, providing efficient performance and low on-resistance.

Manufacturer

The MUN2211T1G is manufactured by ON Semiconductor, a company specializing in semiconductor components and solutions. ON Semiconductor is known for its extensive portfolio that includes analog, digital, and mixed-signal devices, catering to various sectors such as automotive, industrial, communications, and consumer electronics. The company focuses on energy-efficient technologies and provides products that enable the development of advanced electronic systems. With a commitment to innovation and sustainability, ON Semiconductor supports a wide range of applications, from power management to signal processing.

Application

MUN2211T1G is commonly used in applications such as advanced electronics, semiconductor manufacturing, and high-performance coatings. Its properties make it suitable for use in energy storage devices, optoelectronics, and as a dielectric material. Additionally, it finds applications in the aerospace and automotive industries due to its thermal stability and mechanical strength.

Equivalent

The MUN2211T1G is a dual NPN bipolar junction transistor (BJT) in a SOT-23 package. Equivalent products include the BC547B, 2N3904, and MPS2222A, depending on specific application requirements. Ensure to check specifications like voltage, current ratings, and switching speeds for compatibility in your particular circuit.