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MT53E2G32D4DE-046 AIT:C
DRAM LPDDR4 64Gbit 32 200/264 TFBGA 4 IT
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- Mfr。パート #MT53E2G32D4DE-046 AIT:C
- パッケージ
- データシート
- 在庫中19965
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
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仕様
| Packaging | Tray |
| Standard Pack Qty | 1360 |
概要
Description
The MT53E2G32D4DE-046 AIT:C is a type of DRAM memory module developed by Micron Technology. It falls under the category of Mobile DDR (Double Data Rate) SDRAM, specifically designed for portable devices such as smartphones, tablets, and other mobile applications. This memory chip is characterized by its high-speed performance, low power consumption, and compact size, making it suitable for modern electronic devices demanding efficiency and performance.
Key specifications include a 2GB capacity, a 32-bit data bus width, and a maximum data rate of 1.6 Gbps. The AIT (Asynchronous Interface Technology) design allows for improved data transfer rates and responsiveness. It operates at a voltage of 1.2V, contributing to reduced power usage compared to earlier generations of DRAM.
Overall, the MT53E2G32D4DE-046 AIT:C is an advanced memory solution that enhances the performance of mobile devices, supporting both multitasking capabilities and energy efficiency.
Key specifications include a 2GB capacity, a 32-bit data bus width, and a maximum data rate of 1.6 Gbps. The AIT (Asynchronous Interface Technology) design allows for improved data transfer rates and responsiveness. It operates at a voltage of 1.2V, contributing to reduced power usage compared to earlier generations of DRAM.
Overall, the MT53E2G32D4DE-046 AIT:C is an advanced memory solution that enhances the performance of mobile devices, supporting both multitasking capabilities and energy efficiency.
Features
The MT53E2G32D4DE-046 AIT:C is a memory chip manufactured by Micron Technology, specifically a DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) component. Key features include:
1. Capacity: 2Gb (Gigabits) per chip, allowing for various configurations depending on the application.
2. Data Rate: Operates at a data rate of 1600 MT/s (million transfers per second).
3. I/O Bus Width: 32 bits, enabling efficient data transfer.
4. Technology: Built using advanced DRAM technology for improved performance and power efficiency.
5. Voltage: Typically operates at a voltage of 1.2V, which contributes to lower power consumption.
6. Package Type: Usually available in a compact form factor suitable for various applications, including mobile devices and other consumer electronics.
This memory chip is designed for high-performance applications, providing reliable and efficient data storage and access.
1. Capacity: 2Gb (Gigabits) per chip, allowing for various configurations depending on the application.
2. Data Rate: Operates at a data rate of 1600 MT/s (million transfers per second).
3. I/O Bus Width: 32 bits, enabling efficient data transfer.
4. Technology: Built using advanced DRAM technology for improved performance and power efficiency.
5. Voltage: Typically operates at a voltage of 1.2V, which contributes to lower power consumption.
6. Package Type: Usually available in a compact form factor suitable for various applications, including mobile devices and other consumer electronics.
This memory chip is designed for high-performance applications, providing reliable and efficient data storage and access.
Package
The MT53E2G32D4DE-046 AIT:C is a DDR4 memory component packaged in a 96-ball FBGA (Fine Ball Grid Array). This packaging is designed for high-density memory applications, ensuring efficient space usage and thermal performance.
Pinout
The MT53E2G32D4DE-046 AIT:C is a DDR4 SDRAM memory chip from Micron Technology. It features a pin count of 78 pins in a standard TFBGA (Thin Fine Ball Grid Array) package.
The primary functions of this memory chip include:
1. Data Storage: It provides high-speed data storage for computing and mobile applications.
2. Data Transfer: Supports high bandwidth data transfer rates, enhancing overall system performance.
3. Low Power Consumption: Designed for energy efficiency, making it suitable for mobile and battery-operated devices.
4. Error Correction: May support error correction features to ensure data integrity in critical applications.
This memory component is commonly used in various applications, including smartphones, tablets, and other portable devices.
The primary functions of this memory chip include:
1. Data Storage: It provides high-speed data storage for computing and mobile applications.
2. Data Transfer: Supports high bandwidth data transfer rates, enhancing overall system performance.
3. Low Power Consumption: Designed for energy efficiency, making it suitable for mobile and battery-operated devices.
4. Error Correction: May support error correction features to ensure data integrity in critical applications.
This memory component is commonly used in various applications, including smartphones, tablets, and other portable devices.
Manufacturer
The manufacturer of the MT53E2G32D4DE-046 AIT:C is Micron Technology, Inc. Micron is a leading American global memory and storage manufacturer, specializing in semiconductor memory products, including DRAM, NAND flash, and solid-state drives (SSDs). Founded in 1978 and headquartered in Boise, Idaho, Micron serves a wide range of markets, including computing, networking, automotive, and mobile devices. The company focuses on innovation and high-performance memory solutions to meet the growing demands of data-intensive applications and is recognized as one of the major players in the semiconductor industry.
Application
The MT53E2G32D4DE-046 AIT:C is a DDR3 SDRAM memory chip commonly used in applications such as smartphones, tablets, and other mobile devices. Its features make it suitable for high-performance computing tasks, including gaming consoles, embedded systems, and automotive electronics. Additionally, it is utilized in networking equipment and servers, where fast data access and efficient power consumption are crucial.
Equivalent
The MT53E2G32D4DE-046 AIT:C chip is a DRAM memory component from Micron. Equivalent products include:
1. Hynix H5T2G32F2C
2. Samsung K4B2G1646D
3. Nanya NT5CB2G84C
Always verify compatibility based on specifications like voltage, timing, and package type before replacement.
1. Hynix H5T2G32F2C
2. Samsung K4B2G1646D
3. Nanya NT5CB2G84C
Always verify compatibility based on specifications like voltage, timing, and package type before replacement.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
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