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MT53B512M32D2NP-062 WT:C

Name: MT53B512M32D2NP-062 WT:C
Rating: 4.7 (12 reviews)

DRAM LPDDR4 16G 512MX32 FBGA DDP

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Mfr。パート #MT53B512M32D2NP-062 WT:C
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仕様

Packaging	Tray
Standard Pack Qty	1360

概要

Description

The MT53B512M32D2NP-062 WT:C is a type of DDR4 DRAM memory module produced by Micron Technology. This specific part number indicates a 512 Meg x 32 configuration, which means it contains 512 megabits of memory organized in a 32-bit wide data bus. The "062" refers to the speed grade, indicating a maximum data rate of 2400 MT/s (million transfers per second). The "WT:C" designation suggests that it is a commercial-grade memory component suitable for general applications, with operating temperature ranges typically between 0°C to 85°C. This module is used in various applications, including servers, desktops, and laptops, offering improved performance and efficiency compared to previous memory technologies. DDR4 is known for lower power consumption and higher bandwidth, making it suitable for modern computing needs.

Features

The MT53B512M32D2NP-062 WT:C is a DDR4 DRAM memory chip from Micron Technology. Key features include:
1. Capacity: 512 Megabits (64 Megabytes) per chip.
2. Organization: 32 bits wide, suitable for various memory configurations.
3. Speed: Operates at a data rate of 1600 MT/s (million transfers per second) with a clock frequency of 800 MHz.
4. Voltage: Operates at 1.2V, ensuring lower power consumption compared to older DDR technologies.
5. Technology: Built on advanced manufacturing processes, enhancing performance and reliability.
6. Package: Typically available in a compact package, facilitating integration into various electronic devices.
7. Use Cases: Ideal for applications in consumer electronics, computing, networking, and other areas requiring efficient memory solutions.
This chip is designed for high-speed, low-power applications, making it suitable for modern computing needs.

Package

The MT53B512M32D2NP-062 WT:C is a DRAM memory chip packaged in a 78-ball FBGA (Fine Ball Grid Array) package. This type of packaging is designed for high-density memory applications, offering a compact footprint and efficient thermal performance.

Pinout

The MT53B512M32D2NP-062 WT:C is a DDR4 memory chip with a pin count of 96. It is organized as 512 Meg x 32 bits and operates at a speed of 1600 MT/s (megatransfers per second). This memory device supports various features, including on-die termination (ODT), and has a dual rank configuration. The chip is used primarily in applications requiring high-speed memory access, such as in networking equipment, data centers, and servers. The "WT" in the part number indicates it is a wafer-level package, and "C" denotes its commercial temperature range.

Manufacturer

The manufacturer of the MT53B512M32D2NP-062 WT:C is Micron Technology, Inc. Micron is a global leader in memory and storage solutions, specializing in DRAM, NAND flash memory, and other semiconductor technologies. Founded in 1978 and headquartered in Boise, Idaho, Micron serves a wide range of markets, including computing, mobile, automotive, and industrial applications. The company is known for its innovative memory products that drive advancements in technology across various sectors. Micron is publicly traded on the NASDAQ under the ticker symbol MU and is recognized for its commitment to research and development in the semiconductor industry.

Application

The MT53B512M32D2NP-062 WT:C is a DDR4 DRAM memory chip commonly used in applications such as mobile devices, automotive systems, consumer electronics, and high-performance computing. Its low power consumption and high data rates make it suitable for smartphones, tablets, wearables, IoT devices, and server applications requiring efficient memory solutions.

Equivalent

The MT53B512M32D2NP-062 WT:C is a 512Mb mobile DRAM chip. Equivalent products include:
1. Hynix H5TQ4G63AFR - Similar density and specification.
2. Samsung K4B4G1646F - Compatible mobile DRAM solution.
3. Micron MT53B512M32D2 - Direct alternative with similar specs.
Always verify specific parameters like speed, voltage, and package type before substitution.