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MT47H64M8CF-25E:G
IC DRAM 512MBIT PARALLEL 60FBGA
- メーカー
- Mfr。パート #MT47H64M8CF-25E:G
- パッケージ 60-TFBGA
- データシート
- 在庫中4436
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Supplier | Micron Technology Inc. |
| Package | Tray |
| ProductStatus | Obsolete |
| MemoryType | Volatile |
| MemoryFormat | DRAM |
| Technology | SDRAM - DDR2 |
| MemorySize | 512Mb (64M x 8) |
| MemoryInterface | Parallel |
| ClockFrequency | 400 MHz |
| WriteCycleTime-WordPage | 15ns |
| AccessTime | 400 ps |
| Voltage-Supply | 1.7V ~ 1.9V |
| OperatingTemperature | 0°C ~ 85°C (TC) |
| MountingType | Surface Mount |
| Package/Case | 60-TFBGA |
概要
Description
MT47H64M8CF-25E:G is a Micron DDR3L SDRAM die. Key points:
- Organization: 64M x 8 (64 megawords x 8 bits) → 512 Mb total per die.
- Package: RoHS-compliant (G suffix), typically in a FBGA/related package.
- Type: DDR3L SDRAM (low-voltage DDR3), requires a memory controller.
- Speed/voltage: -25E denotes a specific Micron speed grade; operation typically around ~1.35 V (DDR3L) with data rates in the ~1066–1333 MT/s range depending on the grade. Exact timings and voltage per datasheet.
- Use: Not a standalone module; used as one memory device in a multi-device DIMM/subsystem controlled by a memory controller, forming a wider 64-bit bus across devices.
For exact electrical specs, timing, package details, and operating conditions, consult the Micron MT47H64M8CF-25E:G datasheet.
- Organization: 64M x 8 (64 megawords x 8 bits) → 512 Mb total per die.
- Package: RoHS-compliant (G suffix), typically in a FBGA/related package.
- Type: DDR3L SDRAM (low-voltage DDR3), requires a memory controller.
- Speed/voltage: -25E denotes a specific Micron speed grade; operation typically around ~1.35 V (DDR3L) with data rates in the ~1066–1333 MT/s range depending on the grade. Exact timings and voltage per datasheet.
- Use: Not a standalone module; used as one memory device in a multi-device DIMM/subsystem controlled by a memory controller, forming a wider 64-bit bus across devices.
For exact electrical specs, timing, package details, and operating conditions, consult the Micron MT47H64M8CF-25E:G datasheet.
Features
MT47H64M8CF-25E:G is Micron’s 512-Mb DDR2 SDRAM device. Key features:
- Capacity/organization: 512 Mb total (64M x 8)
- Interface: DDR2 SDRAM, unbuffered, synchronous
- Data width: 8-bit wide data bus
- Voltage: 1.8V VDD/VDDQ
- Architecture: 4-bank DDR2 with 4n prefetch
- Speed: supports up to DDR2-800 (depends on grade, timing, and operating conditions)
- Packaging: Pb-free RoHS-compliant (G suffix), typically in an FBGA package
- Refresh/operation: standard DDR2 auto-refresh/self-refresh support
- Applications: suitable for mobile/compact systems and memory modules requiring 512 Mb DDR2 RAM
- Capacity/organization: 512 Mb total (64M x 8)
- Interface: DDR2 SDRAM, unbuffered, synchronous
- Data width: 8-bit wide data bus
- Voltage: 1.8V VDD/VDDQ
- Architecture: 4-bank DDR2 with 4n prefetch
- Speed: supports up to DDR2-800 (depends on grade, timing, and operating conditions)
- Packaging: Pb-free RoHS-compliant (G suffix), typically in an FBGA package
- Refresh/operation: standard DDR2 auto-refresh/self-refresh support
- Applications: suitable for mobile/compact systems and memory modules requiring 512 Mb DDR2 RAM
Package
FBGA package (Pb-free, RoHS-compliant).
Pinout
- Pin count: 60-ball FBGA package (60 pins).
- Function: 64M × 8-bit Mobile DDR2 SDRAM memory device with an 8-bit data bus; synchronous DDR2 memory supporting standard address, bank, command, data (DQ/DQS) lines for use as system RAM in mobile devices.
- Function: 64M × 8-bit Mobile DDR2 SDRAM memory device with an 8-bit data bus; synchronous DDR2 memory supporting standard address, bank, command, data (DQ/DQS) lines for use as system RAM in mobile devices.
Manufacturer
- Manufacturer: Micron Technology, Inc. (Micron)
- What kind of company: A global American semiconductor company that designs and manufactures memory and storage products (e.g., DRAM, NAND flash).
- What kind of company: A global American semiconductor company that designs and manufactures memory and storage products (e.g., DRAM, NAND flash).
Application
MT47H64M8CF-25E:G is a 64M×8 (512Mb), low‑power memory device (2.5V SDRAM). Intended as main system RAM in mobile/embedded platforms. Typical applications include mobile phones/handheld devices, embedded controllers, digital cameras/MP3 players, set‑top boxes and smart TVs, routers/switches, industrial automation equipment, and automotive infotainment where compact, low‑power memory is required.
Equivalent
MT47H64M8CF-25E:G is a Micron 512 Mb DDR3L SDRAM (64M×8). Exact equivalents depend on package, voltage and speed. Please provide:
- package code (FBGA variant)
- voltage (1.35V or 1.5V)
- speed grade (e.g., 1333/1066 MT/s)
- any timing/temperature specs
With these, I can give precise cross-references (e.g., SK hynix, Samsung equivalents).
- package code (FBGA variant)
- voltage (1.35V or 1.5V)
- speed grade (e.g., 1333/1066 MT/s)
- any timing/temperature specs
With these, I can give precise cross-references (e.g., SK hynix, Samsung equivalents).
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
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