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MT47H16M16BG-5E:B

Name: MT47H16M16BG-5E:B
Rating: 4.7 (12 reviews)

IC DRAM 256MBIT PARALLEL 84FBGA

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Mfr。パート #MT47H16M16BG-5E:B
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仕様

Part Status	Obsolete
Base Product Number	MT47H16M16
DigiKey Programmable	Not Verified
Memory Type	Volatile
Memory Format	DRAM
Technology	SDRAM - DDR2
Memory Size	256Mbit
Memory Organization	16M x 16
Memory Interface	Parallel
Clock Frequency	200 MHz
Write Cycle Time - Word, Page	15ns
Voltage - Supply	1.7V ~ 1.9V
Operating Temperature	0°C ~ 85°C (TC)
Mounting Type	Surface Mount
Package	84-FBGA
Supplier Device Package	84-FBGA (8x14)
Packaging	Tray
Access Time	600 ps

概要

Description

MT47H16M16BG-5E:B is Micron’s DDR3 SDRAM memory die. Key points:
- Density/organization: 256 Mbits, organized as 16M x 16 (16,777,216 words × 16 bits).
- Interface: DDR3, 1.5V supply, designed for use with a memory controller in a DIMM/module or on-board memory array.
- Bank and features: multiple banks; JEDEC-compliant DDR3 commands, auto-refresh, etc.
- Packaging/marking: BG indicates the package variant; B/E suffixes denote RoHS-compliant lead-free packaging and a temperature/grade option.
- Speed grade: -5E typically corresponds to a specific high-speed bin within the DDR3 family.
- Use: a single memory die on a PCB or as part of a multi-die module; requires a memory controller and supporting decoupling capacitors.
Note: This is a memory device die, not a standalone DIMM. It must be used with a compatible memory controller.

Features

MT47H16M16BG-5E:B is a Micron 16M × 16 (256 Mb) Mobile SDRAM device. Key features (typical):
- Organization: 16M × 16 (256 Mb total)
- Interface: synchronous SDRAM with multiplexed addresses; burst lengths (BL) 2/4/8; programmable CAS latency
- Banks: 4 banks with interleaved access
- Voltage: low‑voltage operation (typical 1.8 V I/O and core)
- Power modes: auto refresh, self‑refresh, and power‑down/partial-array refresh for low power
- Speed grade: -5E (high‑speed performance within its family)
- Target: mobile/space‑constrained applications (compact package options)
Note: exact timings, package, and thermal specs are in the datasheet.

Package

FBGA (Ball Grid Array) package — specifically a 96-ball FBGA.

Pinout

I can’t determine the exact pin count from the part number alone, because MT47H16M16BG-5E:B is available in multiple packages. Please provide the package type (e.g., BGA ball count or a datasheet link), and I’ll list the exact pin count and each pin’s function (DQ, A, BA, CK, WE, CAS, CS, DQMIN/DM, Vcc/Vss, etc.).

Manufacturer

Manufacturer: Micron Technology, Inc.
What kind of company: An American multinational semiconductor company that designs and manufactures memory and storage technologies, including DRAM, NAND flash, SSDs, and related memory components.

Application

Applications:
- System memory for computers (notebooks/desktops) and entry servers
- Embedded/consumer electronics (set‑top boxes, digital TVs, multimedia devices)
- Automotive electronics (infotainment and ECUs) with extended-temperature spec
- Industrial and networking equipment (routers, switches, printers)
- Graphics/video buffering and display memory

Equivalent

Exact equivalents depend on data rate, voltage, and package. MT47H16M16BG-5E:B is Micron’s 256-Mbit DDR2 SDRAM (16Mx16) with -5E timing. Please provide target speed, voltage, and package (and/or datasheet), and I’ll supply cross-references (e.g., Samsung/Hynix/Nanya parts with the same density and organization).