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MT46V32M16CY-5B:J

Name: MT46V32M16CY-5B:J
Rating: 4.7 (12 reviews)

IC DRAM 512MBIT PARALLEL 60FBGA

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Mfr。パート #MT46V32M16CY-5B:J
パッケージ 60-TFBGA
データシート
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仕様

Supplier	Micron Technology Inc.
Package	Tray
ProductStatus	Obsolete
MemoryType	Volatile
MemoryFormat	DRAM
Technology	SDRAM - DDR
MemorySize	512Mb (32M x 16)
MemoryInterface	Parallel
ClockFrequency	200 MHz
WriteCycleTime-WordPage	15ns
AccessTime	700 ps
Voltage-Supply	2.5V ~ 2.7V
OperatingTemperature	0°C ~ 70°C (TA)
MountingType	Surface Mount
Package/Case	60-TFBGA

概要

Description

MT46V32M16CY-5B:J is a Micron memory IC from the MT46V family. It is a 512‑Mb DRAM device organized as 32M x 16 (16‑bit data bus). It is a synchronous DRAM with multi‑bank architecture that requires a memory controller to issue standard address/command signals and handle periodic refresh.
Key points:
- Density/organization: 512 Mb, 32M x 16
- Interface: synchronous DRAM with typical DRAM timing and refresh
- Voltage: generally DDR/DDR2‑class (reference the exact datasheet for operating voltage and temp range)
- Suffix meaning: -5B denotes a specific speed grade; J indicates packaging/lead‑free variant
- CY: family/packaging code (see datasheet for exact interpretation)
Usage notes:
- Used as a memory component in systems requiring a 16‑bit data path
- Requires a compatible memory controller and correct timing parameters
- For precise specs (tRCD, tRP, tRC, tREF, voltage, temperature), consult the Micron MT46V32M16CY-5B:J datasheet and product brief.

Features

MT46V32M16CY-5B:J is a Micron DDR2 SDRAM. Key features:
- Density/organization: 512 Mb total (32M × 16)
- Interface: DDR2 SDRAM, synchronous with DQS/DQ
- Voltage: 1.8V (typical)
- Banks: 8 banks
- Burst: Burst length 4/8 with sequential wrap
- Refresh: Auto-refresh and self-refresh support
- Speed grade: -5B (high-speed variant within the DDR2 family)
- Data transfer: high-speed synchronous operation suitable for PC2/Server DDR2 memory deployments
Note: exact timing parameters (tRP, tRCD, CL) and supported speeds depend on the specific device revision and operating conditions in the datasheet.

Package

FBGA (ball-grid array) package. The -J variant denotes the RoHS lead-free version.

Pinout

Pin count: 54 pins (TSOP-II 54-pin package).
Function: Mobile DDR2 SDRAM, 512 Mb total, organized as 32M × 16, 1.8 V core with a 16-bit data bus. Used as system memory in mobile applications.

Manufacturer

- Manufacturer: Micron Technology, Inc.
- Kind of company: An American multinational semiconductor company that designs and manufactures memory and storage technologies (DRAM, NAND/NOR flash) for computers and electronics.

Application

Low-power mobile/embedded DDR SDRAM. Used as main memory in mobile and embedded systems and consumer electronics, including handheld devices (phones, tablets), digital cameras/camcorders, set-top boxes, multimedia/game consoles, networking gear, and automotive infotainment where space and power are constrained.

Equivalent

MT46V32M16CY-5B:J is Micron’s 512 Mb DDR2 SDRAM, organized 32M × 16, operating at 1.8 V, -5B speed grade. Equivalents are other 32M × 16 DDR2 devices at 1.8 V with similar timing (roughly CL 4–5, tRP/tRC ~13–20 ns). Cross-references exist from Samsung, Hynix, Nanya, AllianceMemory for DDR2 512 Mb ×16 parts. For exact part numbers, please provide packaging (TSOP/NFBGA) and speed; I can give precise cross-refs.