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MT41K512M16HA-107:A
IC DRAM 8GBIT PAR 96FBGA
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- Mfr。パート #MT41K512M16HA-107:A
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仕様
| Part Status | Obsolete |
| Base Product Number | MT41K512M16 |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3L |
| Memory Size | 8Gbit |
| Memory Organization | 512M x 16 |
| Memory Interface | Parallel |
| Clock Frequency | 933 MHz |
| Voltage - Supply | 1.283V ~ 1.45V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package | 96-TFBGA |
| Supplier Device Package | 96-FBGA (9x14) |
| Packaging | Tray |
| Access Time | 20 ns |
概要
Description
The MT41K512M16HA-107:A is a 4GB DDR3 SDRAM (Dynamic Random Access Memory) module produced by Micron Technology. It features a 512 Meg x 16 configuration, allowing for high-density memory solutions in various applications. This memory chip operates at a frequency of 1600 MT/s (megatransfers per second) and has a 1.5V power supply, making it suitable for energy-efficient computing. The "107" in its designation indicates the specific speed grade, while the "A" suffix denotes the package and design variation.
Commonly used in computers, servers, and embedded systems, the MT41K512M16HA-107:A provides reliable performance for high-bandwidth applications, supporting features like burst mode and random access. Its compatibility with JEDEC standards ensures ease of integration into existing systems. Overall, it is designed for applications requiring stable and efficient memory solutions.
Commonly used in computers, servers, and embedded systems, the MT41K512M16HA-107:A provides reliable performance for high-bandwidth applications, supporting features like burst mode and random access. Its compatibility with JEDEC standards ensures ease of integration into existing systems. Overall, it is designed for applications requiring stable and efficient memory solutions.
Features
The MT41K512M16HA-107:A is a DDR3 SDRAM memory chip manufactured by Micron Technology. It features:
1. Density: 8 Gigabits (1 GB), organized as 512 Meg x 16 bits.
2. Technology: DDR3 (Double Data Rate 3) SDRAM, ensuring higher bandwidth and lower power consumption compared to DDR2.
3. Speed: Operates at a data rate of 1066 MT/s (million transfers per second).
4. Voltage: Operates on a supply voltage of 1.5V, with options for low voltage operation at 1.35V.
5. Package: Available in a 78-ball TFBGA (Thin Fine Ball Grid Array) package, suitable for high-density applications.
6. Features: Supports various features like burst lengths of 4 or 8, and includes on-die termination (ODT) for improved signal integrity.
7. Applications: Commonly used in computing, networking, and embedded systems due to its reliability and performance.
This chip is optimized for mobile and embedded applications, making it a versatile choice for modern electronic designs.
1. Density: 8 Gigabits (1 GB), organized as 512 Meg x 16 bits.
2. Technology: DDR3 (Double Data Rate 3) SDRAM, ensuring higher bandwidth and lower power consumption compared to DDR2.
3. Speed: Operates at a data rate of 1066 MT/s (million transfers per second).
4. Voltage: Operates on a supply voltage of 1.5V, with options for low voltage operation at 1.35V.
5. Package: Available in a 78-ball TFBGA (Thin Fine Ball Grid Array) package, suitable for high-density applications.
6. Features: Supports various features like burst lengths of 4 or 8, and includes on-die termination (ODT) for improved signal integrity.
7. Applications: Commonly used in computing, networking, and embedded systems due to its reliability and performance.
This chip is optimized for mobile and embedded applications, making it a versatile choice for modern electronic designs.
Package
The MT41K512M16HA-107:A is a DDR3 SDRAM memory chip packaged in a 78-ball FBGA (Fine Ball Grid Array) package. This compact package design helps optimize space on PCBs while ensuring effective thermal management and electrical performance.
Pinout
The MT41K512M16HA-107:A is a DDR3 SDRAM memory chip from Micron Technology. It has a pin count of 78 balls in a BGA (Ball Grid Array) package.
The primary functions of this chip include:
- Memory Storage: It provides memory capacity of 8Gb (gigabits) organized as 512M x 16 bits.
- Data Transfer: Supports data rates up to 1600 MT/s (megatransfers per second) with a typical operating voltage of 1.5V.
- Burst Length: Provides burst lengths of 8 and 4 for data access efficiency.
- Bank Configuration: Configured with 8 banks to allow for simultaneous access and higher throughput.
Overall, the MT41K512M16HA-107:A is designed for use in various applications, including computing and embedded systems, where high-density and high-speed memory is required.
The primary functions of this chip include:
- Memory Storage: It provides memory capacity of 8Gb (gigabits) organized as 512M x 16 bits.
- Data Transfer: Supports data rates up to 1600 MT/s (megatransfers per second) with a typical operating voltage of 1.5V.
- Burst Length: Provides burst lengths of 8 and 4 for data access efficiency.
- Bank Configuration: Configured with 8 banks to allow for simultaneous access and higher throughput.
Overall, the MT41K512M16HA-107:A is designed for use in various applications, including computing and embedded systems, where high-density and high-speed memory is required.
Manufacturer
The manufacturer of the MT41K512M16HA-107:A is Micron Technology, Inc. Micron is an American company that specializes in the production of memory and storage solutions, including DRAM (Dynamic Random Access Memory) and NAND flash memory products. Founded in 1978 and headquartered in Boise, Idaho, Micron is a key player in the semiconductor industry and serves various markets, including computing, mobile, embedded, and automotive. The company's products are widely used in electronic devices such as smartphones, tablets, computers, and servers. Micron is known for its innovation and reliability in memory technology, contributing significantly to advancements in data storage and processing.
Application
The MT41K512M16HA-107:A is a DDR3 SDRAM memory chip primarily used in applications such as desktop and laptop computers, servers, networking equipment, and embedded systems. It supports high-performance computing tasks, data storage, and processing in various consumer electronics, industrial devices, and telecommunications equipment. Its features make it suitable for applications requiring efficient data transfer and reliable performance.
Equivalent
The MT41K512M16HA-107:A is a DDR3 SDRAM memory chip. Equivalent products include:
1. Hynix H5TQ2G83EFR
2. Samsung K4B4G0846D
3. Micron MT41K512M16HA-125
4. Nanya NT5CC256M16DP-DI
Ensure compatibility with your specific application regarding speed, voltage, and timing specifications.
1. Hynix H5TQ2G83EFR
2. Samsung K4B4G0846D
3. Micron MT41K512M16HA-125
4. Nanya NT5CC256M16DP-DI
Ensure compatibility with your specific application regarding speed, voltage, and timing specifications.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
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1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
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