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MT40A4G4SA-062E:F
IC DRAM 16GBIT PAR 78FBGA
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- Mfr。パート #MT40A4G4SA-062E:F
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仕様
| Part Status | Last Time Buy |
| Base Product Number | MT40A4G4 |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR4 |
| Memory Size | 16Gbit |
| Memory Organization | 4G x 4 |
| Memory Interface | Parallel |
| Clock Frequency | 1.5 GHz |
| Write Cycle Time - Word, Page | 15ns |
| Voltage - Supply | 1.14V ~ 1.26V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package | 78-TFBGA |
| Supplier Device Package | 78-FBGA (7.5x11) |
| Packaging | Bulk |
| Access Time | 19 ns |
概要
Description
The MT40A4G4SA-062E:F is a 4GB DDR3 SDRAM memory module produced by Micron Technology. It is designed for use in various computing applications, including laptops and desktops. This module features a 64-bit data width and operates at a 1.5V voltage level, supporting speeds of up to 1600 MT/s (megatransfers per second). The "A4G4" designation indicates the configuration and density of the memory chips used within the module.
Key features include:
- Type: DDR3 SDRAM
- Capacity: 4GB
- Data Rate: 1600 MT/s
- Voltage: 1.5V
- Form Factor: Typically SO-DIMM (for laptops) or DIMM (for desktops)
This module is suitable for enhancing system performance in applications requiring fast memory access and processing power. It is also backward compatible with DDR3L, allowing for flexibility in various systems.
Key features include:
- Type: DDR3 SDRAM
- Capacity: 4GB
- Data Rate: 1600 MT/s
- Voltage: 1.5V
- Form Factor: Typically SO-DIMM (for laptops) or DIMM (for desktops)
This module is suitable for enhancing system performance in applications requiring fast memory access and processing power. It is also backward compatible with DDR3L, allowing for flexibility in various systems.
Features
The MT40A4G4SA-062E:F is a DRAM memory module from Micron Technology, specifically designed for high-performance applications. Here are its key features:
1. Type: DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic RAM).
2. Density: 4GB (gigabytes) per module.
3. Configuration: 512 Meg x 64-bit organization.
4. Speed: Operates at a data rate of 2400 MT/s (megatransfers per second).
5. Voltage: Designed to operate at 1.2V, which provides improved energy efficiency compared to previous generations.
6. Form Factor: SO-DIMM (Small Outline Dual In-line Memory Module), making it suitable for laptops and compact systems.
7. Features: Supports features like ECC (Error Correction Code) for enhanced reliability and system stability.
8. Temperature Range: Typically available in both standard and extended temperature ranges for various applications.
This module is ideal for laptops, desktops, and other devices requiring efficient and reliable memory performance.
1. Type: DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic RAM).
2. Density: 4GB (gigabytes) per module.
3. Configuration: 512 Meg x 64-bit organization.
4. Speed: Operates at a data rate of 2400 MT/s (megatransfers per second).
5. Voltage: Designed to operate at 1.2V, which provides improved energy efficiency compared to previous generations.
6. Form Factor: SO-DIMM (Small Outline Dual In-line Memory Module), making it suitable for laptops and compact systems.
7. Features: Supports features like ECC (Error Correction Code) for enhanced reliability and system stability.
8. Temperature Range: Typically available in both standard and extended temperature ranges for various applications.
This module is ideal for laptops, desktops, and other devices requiring efficient and reliable memory performance.
Package
The MT40A4G4SA-062E:F is a DDR4 SDRAM memory chip packaged in a 78-ball FBFGA (Fine Pitch Ball Grid Array) package. This type of packaging is designed for efficient thermal management and high-density applications, commonly used in mobile and portable devices.
Pinout
The MT40A4G4SA-062E:F is a DRAM memory chip from Micron's DDR4 SDRAM family. It features a pin count of 78 pins in a TFBGA (Thin Fine Ball Grid Array) package.
Key functions of the pins include:
1. Data Pins: For data input and output (DQ0-DQ63).
2. Address Pins: To specify the memory address (A0-A15).
3. Control Pins: For command and control signals, including Chip Select (CS), Write Enable (WE), and Read Enable (RE).
4. Clock Pins: For clock signals (CK, CK#) that synchronize data transfers.
5. Power and Ground Pins: For voltage supply (VDD, VSS) to power the chip.
6. Baud Rate Control Pins: For managing the speed of operations.
This chip is designed for high-performance applications, providing various features such as increased bandwidth and lower power consumption compared to previous DDR generations.
Key functions of the pins include:
1. Data Pins: For data input and output (DQ0-DQ63).
2. Address Pins: To specify the memory address (A0-A15).
3. Control Pins: For command and control signals, including Chip Select (CS), Write Enable (WE), and Read Enable (RE).
4. Clock Pins: For clock signals (CK, CK#) that synchronize data transfers.
5. Power and Ground Pins: For voltage supply (VDD, VSS) to power the chip.
6. Baud Rate Control Pins: For managing the speed of operations.
This chip is designed for high-performance applications, providing various features such as increased bandwidth and lower power consumption compared to previous DDR generations.
Manufacturer
The manufacturer of the MT40A4G4SA-062E:F is Micron Technology, Inc. Micron is a leading global provider of advanced semiconductor solutions, specializing in memory and storage technologies, including DRAM, NAND, and NOR flash memory. Founded in 1978 and headquartered in Boise, Idaho, Micron serves a wide range of markets, including computing, networking, mobile, and automotive applications. The company is known for its innovation in memory products and is a key player in the semiconductor industry, contributing to advancements in data storage and processing capabilities across various electronic devices.
Application
The MT40A4G4SA-062E:F is a 4GB DDR3 SDRAM memory module primarily used in applications such as laptops, desktops, servers, and embedded systems. Its key areas include data processing, gaming, graphics rendering, and general computing tasks where efficient memory performance is crucial. Additionally, it can be utilized in networking equipment and telecommunications for memory-intensive applications.
Equivalent
The MT40A4G4SA-062E:F chip is a 4Gb DDR3 SDRAM memory chip. Equivalent products include:
1. Hynix H5TQ4G83CFR
2. Samsung K4B4G0846F
3. Micron MT41K256M16HA-125
Always check specifications and compatibility for specific use cases.
1. Hynix H5TQ4G83CFR
2. Samsung K4B4G0846F
3. Micron MT41K256M16HA-125
Always check specifications and compatibility for specific use cases.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
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