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MT40A2G8NRE-083E:B
IC DRAM 16GBIT PARALLEL 78FBGA
- メーカー
- Mfr。パート #MT40A2G8NRE-083E:B
- パッケージ FBGA-78
- データシート
- 在庫中6243
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Package | Tray |
| ProductStatus | Obsolete |
| MemoryType | Volatile |
| MemoryFormat | DRAM |
| Technology | SDRAM - DDR4 |
| MemorySize | 16Gb (2G x 8) |
| MemoryInterface | Parallel |
| ClockFrequency | 1.2 GHz |
| Voltage-Supply | 1.14V ~ 1.26V |
| OperatingTemperature | 0°C ~ 95°C (TC) |
| MountingType | Surface Mount |
| Package/Case | 78-TFBGA |
概要
Description
The MT40A2G8NRE-083E:B is a memory module produced by Micron Technology, specifically designed for high-performance computing and server applications. It belongs to the DDR4 SDRAM family, offering improved speed, efficiency, and capacity compared to previous generations. This module features 8GB of memory, with a data rate of 2400 MT/s, ensuring quick data access and processing capabilities.
Key specifications include a 1.2V operating voltage, which contributes to lower power consumption and enhanced thermal performance. The module follows the JEDEC standards, ensuring compatibility with a wide range of systems. The MT40A2G8NRE-083E:B is ideal for applications requiring robust memory performance, including cloud computing, data centers, and enterprise-level servers.
In summary, this memory module is engineered for optimal performance and reliability, making it suitable for demanding workloads in modern computing environments.
Key specifications include a 1.2V operating voltage, which contributes to lower power consumption and enhanced thermal performance. The module follows the JEDEC standards, ensuring compatibility with a wide range of systems. The MT40A2G8NRE-083E:B is ideal for applications requiring robust memory performance, including cloud computing, data centers, and enterprise-level servers.
In summary, this memory module is engineered for optimal performance and reliability, making it suitable for demanding workloads in modern computing environments.
Features
The MT40A2G8NRE-083E:B is a high-performance DDR4 DRAM memory module developed by Micron Technology. Here are its key features:
1. Capacity: 16GB (2x8GB) configuration, suited for high-capacity needs.
2. Data Rate: Operates at a data rate of 2400 MT/s (million transfers per second), providing efficient performance for various applications.
3. Organization: Features a 2x8 organization, which enhances data handling and throughput.
4. Voltage: Operates at a low voltage of 1.2V, leading to reduced power consumption and heat generation.
5. Form Factor: Available in a compact DDR4 SO-DIMM format, ideal for laptops and small devices.
6. Latency: Offers a CAS latency of CL17, balancing speed and performance.
7. Compatibility: Designed to meet JEDEC standards, ensuring compatibility with a wide range of systems.
8. Error Correction: Supports ECC (Error Correction Code) for improved data integrity.
This memory module is suitable for applications in gaming, workstations, and data centers where performance and efficiency are critical.
1. Capacity: 16GB (2x8GB) configuration, suited for high-capacity needs.
2. Data Rate: Operates at a data rate of 2400 MT/s (million transfers per second), providing efficient performance for various applications.
3. Organization: Features a 2x8 organization, which enhances data handling and throughput.
4. Voltage: Operates at a low voltage of 1.2V, leading to reduced power consumption and heat generation.
5. Form Factor: Available in a compact DDR4 SO-DIMM format, ideal for laptops and small devices.
6. Latency: Offers a CAS latency of CL17, balancing speed and performance.
7. Compatibility: Designed to meet JEDEC standards, ensuring compatibility with a wide range of systems.
8. Error Correction: Supports ECC (Error Correction Code) for improved data integrity.
This memory module is suitable for applications in gaming, workstations, and data centers where performance and efficiency are critical.
Package
The MT40A2G8NRE-083E:B is a DRAM memory chip packaged in a 78-ball FBGAA (Fine Pitch Ball Grid Array) format. This package type is suitable for high-density applications and provides improved thermal performance and electrical characteristics.
Pinout
The MT40A2G8NRE-083E:B is a DRAM memory chip produced by Micron Technology. It has a pin count of 78 pins and follows the DDR3 SDRAM (double data rate synchronous dynamic random-access memory) architecture. This specific model is designed for applications requiring high performance and efficiency, typically used in various computing and networking devices.
The primary functions of the MT40A2G8NRE-083E:B include data storage, memory access, and data transfer. It operates at a voltage of 1.5V and supports a range of data rates, enhancing the speed and efficiency of memory operations. The chip features a wide I/O interface, allowing for faster data throughput, which is essential in applications like servers, mobile devices, and high-performance computing systems.
The primary functions of the MT40A2G8NRE-083E:B include data storage, memory access, and data transfer. It operates at a voltage of 1.5V and supports a range of data rates, enhancing the speed and efficiency of memory operations. The chip features a wide I/O interface, allowing for faster data throughput, which is essential in applications like servers, mobile devices, and high-performance computing systems.
Manufacturer
The MT40A2G8NRE-083E:B is manufactured by Micron Technology, Inc. Micron is a global leader in the semiconductor industry, specializing in memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron produces a variety of memory products, including DRAM, NAND flash, and NOR flash memory. Their technologies are widely used in computing, mobile devices, automotive, and industrial applications. Micron is recognized for its innovation in memory solutions and plays a significant role in advancing data storage and processing capabilities across various sectors.
Application
The MT40A2G8NRE-083E:B is a DDR4 DRAM memory chip commonly used in applications such as high-performance computing, servers, networking equipment, and mobile devices. It supports data-intensive tasks like gaming, data analytics, and artificial intelligence, providing efficient memory solutions for modern computing needs.
Equivalent
The MT40A2G8NRE-083E:B is a DDR3 DRAM chip. Equivalent products can include:
1. Hynix H5TQ2G83CFR - DDR3
2. Samsung K4B4G1646D - DDR3
3. Micron MT41K256M16 - DDR3
Always check specifications for compatibility such as speed, voltage, and organization before substitution.
1. Hynix H5TQ2G83CFR - DDR3
2. Samsung K4B4G1646D - DDR3
3. Micron MT41K256M16 - DDR3
Always check specifications for compatibility such as speed, voltage, and organization before substitution.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
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