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MT40A256M16LY-075:F
IC DRAM 4GBIT PAR 96FBGA
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- Mfr。パート #MT40A256M16LY-075:F
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仕様
| Part Status | Obsolete |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR4 |
| Memory Size | 4Gbit |
| Memory Organization | 256M x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 15ns |
| Voltage - Supply | 1.14V ~ 1.26V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 96-TFBGA |
| Supplier Device Package | 96-FBGA (7.5x13.5) |
| Base Product Number | MT40A256M16 |
| Clock Frequency | 1.333 GHz |
| Access Time | 19 ns |
概要
Description
The MT40A256M16LY-075:F is a type of dynamic random-access memory (DRAM) module, specifically a DDR4 SDRAM. It is manufactured by Micron Technology, a leader in the semiconductor industry. This memory module is part of Micron’s DRAM portfolio, designed to offer high performance, reliability, and energy efficiency, making it suitable for a wide range of computing applications including servers, desktops, laptops, and networking devices.
Key specifications of the MT40A256M16LY-075:F include a storage capacity of 4Gb (gigabits) and an interface width of 16 bits. The ‘075’ in its designation signifies a speed grade of 0.75 nanoseconds, which translates to a data rate of 2,666 MT/s (megatransfers per second). This makes it capable of supporting high data throughput, essential for modern computing tasks.
The module operates at a voltage of 1.2V, aligning with industry standards for DDR4 memory, which contributes to its energy efficiency. Additionally, it incorporates features like on-die termination (ODT) and programmable CAS latency, which enhance signal integrity and performance. Overall, the MT40A256M16LY-075:F is a robust choice for systems requiring efficient and reliable memory solutions.
Key specifications of the MT40A256M16LY-075:F include a storage capacity of 4Gb (gigabits) and an interface width of 16 bits. The ‘075’ in its designation signifies a speed grade of 0.75 nanoseconds, which translates to a data rate of 2,666 MT/s (megatransfers per second). This makes it capable of supporting high data throughput, essential for modern computing tasks.
The module operates at a voltage of 1.2V, aligning with industry standards for DDR4 memory, which contributes to its energy efficiency. Additionally, it incorporates features like on-die termination (ODT) and programmable CAS latency, which enhance signal integrity and performance. Overall, the MT40A256M16LY-075:F is a robust choice for systems requiring efficient and reliable memory solutions.
Features
The MT40A256M16LY-075:F is a DRAM (Dynamic Random-Access Memory) component, specifically a 4Gb DDR4 (Double Data Rate 4) SDRAM. Key features of this chip include:
1. Data Rate: It supports DDR4-2400, enabling efficient data transfer rates.
2. Density: The memory density is 4Gb, which is organized as 256M x 16.
3. Package: Comes in a 96-ball FBGA (Fine-Pitch Ball Grid Array) package.
4. Voltage: Operates at a low voltage of 1.2V, which helps to reduce power consumption.
5. Speed: Offers a clock speed of up to 2400 MT/s (megatransfers per second).
6. Bank Group Architecture: Features a bank group architecture for improved performance.
7. On-die Termination (ODT): Includes on-die termination for better signal integrity.
8. VrefDQ Calibration: Supports VrefDQ calibration to ensure reliability and accuracy.
9. Auto Self-Refresh: Equipped with an auto self-refresh feature to maintain data integrity with low power usage.
10. Compliance: Conforms to the industry-standard DDR4 specifications.
These features make the MT40A256M16LY-075:F suitable for a variety of applications requiring high-speed data processing and reliability, such as computing and networking devices.
1. Data Rate: It supports DDR4-2400, enabling efficient data transfer rates.
2. Density: The memory density is 4Gb, which is organized as 256M x 16.
3. Package: Comes in a 96-ball FBGA (Fine-Pitch Ball Grid Array) package.
4. Voltage: Operates at a low voltage of 1.2V, which helps to reduce power consumption.
5. Speed: Offers a clock speed of up to 2400 MT/s (megatransfers per second).
6. Bank Group Architecture: Features a bank group architecture for improved performance.
7. On-die Termination (ODT): Includes on-die termination for better signal integrity.
8. VrefDQ Calibration: Supports VrefDQ calibration to ensure reliability and accuracy.
9. Auto Self-Refresh: Equipped with an auto self-refresh feature to maintain data integrity with low power usage.
10. Compliance: Conforms to the industry-standard DDR4 specifications.
These features make the MT40A256M16LY-075:F suitable for a variety of applications requiring high-speed data processing and reliability, such as computing and networking devices.
Package
The MT40A256M16LY-075:F is a DRAM module in a 96-ball FBGA (Fine-Pitch Ball Grid Array) package. This package type facilitates a high-density memory configuration suitable for compact electronic applications.
Pinout
The MT40A256M16LY-075:F is a DDR4 SDRAM chip manufactured by Micron Technology. It features a 96-ball FBGA (Fine Ball Grid Array) package, which essentially means it has 96 pins or balls for electrical connections. This specific DDR4 chip is organized as 16 Meg x 16 x 16 banks.
The primary function of this chip is to serve as a high-speed, volatile memory component suitable for computing applications where rapid data access and temporary storage are required. It supports high-performance data rates and low power consumption, making it ideal for a wide variety of applications ranging from personal computers to complex servers.
Features include:
1. High data rates supporting speeds of up to DDR4-3200.
2. Low operating voltage of 1.2V, contributing to energy efficiency.
3. Support for on-die termination (ODT) and bank group architecture, which improves signal integrity and access speed.
4. Advanced error correction features like CRC (Cyclic Redundancy Check) for data integrity.
These attributes make the MT40A256M16LY-075:F a versatile component in modern computing systems.
The primary function of this chip is to serve as a high-speed, volatile memory component suitable for computing applications where rapid data access and temporary storage are required. It supports high-performance data rates and low power consumption, making it ideal for a wide variety of applications ranging from personal computers to complex servers.
Features include:
1. High data rates supporting speeds of up to DDR4-3200.
2. Low operating voltage of 1.2V, contributing to energy efficiency.
3. Support for on-die termination (ODT) and bank group architecture, which improves signal integrity and access speed.
4. Advanced error correction features like CRC (Cyclic Redundancy Check) for data integrity.
These attributes make the MT40A256M16LY-075:F a versatile component in modern computing systems.
Manufacturer
The MT40A256M16LY-075:F is manufactured by Micron Technology, Inc. Micron is a leading American company specializing in the production of semiconductor devices, primarily focusing on memory and storage solutions. Their product portfolio includes dynamic random-access memory (DRAM), NAND flash memory, and solid-state drives (SSDs). Micron’s technologies are widely used in various applications, including consumer electronics, mobile devices, data centers, and automotive systems. The company is known for its innovation in memory technology and plays a significant role in the global semiconductor industry.
Application
The MT40A256M16LY-075:F is a DDR4 SDRAM module commonly used in areas requiring fast and efficient memory solutions. Its application areas include data centers, servers, and networking equipment, where high-speed data processing and reliability are crucial. It's also used in high-performance computing systems, including workstations and gaming rigs, owing to its ability to handle intensive tasks. Additionally, it is suitable for embedded systems and industrial applications that demand robust memory performance.
Equivalent
The MT40A256M16LY-075:F is a DDR4 SDRAM chip from Micron. Equivalent products would be other DDR4 SDRAM chips with similar specifications from different manufacturers, such as:
1. Samsung K4A8G165WB-BCTD
2. SK Hynix H5AN8G6NAFR-UHC
3. Kingston D4N8G088HSMJP
These alternatives should be verified for compatibility based on specific requirements like speed, voltage, and timing.
1. Samsung K4A8G165WB-BCTD
2. SK Hynix H5AN8G6NAFR-UHC
3. Kingston D4N8G088HSMJP
These alternatives should be verified for compatibility based on specific requirements like speed, voltage, and timing.
出荷
出荷方法私たち
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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