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MT40A256M16GE-083EIT:B
1.14V~1.26V 4Gbit 1.2GHz DDR4 SDRAM FBGA-96 Memory (ICs) RoHS
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仕様
| Packaging | FBGA-96 |
| Clock Frequency | 1.2GHz |
| Current - Supply | 69mA |
| Memory Format | DDR4 SDRAM |
| Memory Size | 4Gbit |
| Operating temperature | -40℃~+95℃ |
| Refresh Current | 9mA |
| Voltage - Supply | 1.14V~1.26V |
概要
Description
The MT40A256M16GE-083EIT:B is a DRAM module manufactured by Micron Technology. It is part of the DDR4 SDRAM series, designed to provide high-speed data transfers and improved energy efficiency compared to its predecessors. This specific module has a capacity of 4Gb (gigabits) and features a 256Mx16 configuration. The "083E" in the part number typically refers to the speed grade and specific timing parameters of the module, which affect how quickly it can read and write data. The "IT" denotes the industrial temperature range, indicating that it can operate in more extreme temperatures compared to standard commercial-grade memory, making it suitable for industrial applications. Overall, the MT40A256M16GE-083EIT:B is designed for applications requiring robust performance, reliability, and energy efficiency, such as servers, networking equipment, and high-performance computing systems.
Features
The MT40A256M16GE-083EIT:B is a DRAM component from Micron's DDR4 SDRAM series. Key features include:
1. Density and Organization: It has a density of 4Gb and is organized as 256M x 16, making it suitable for high-density memory applications.
2. Clock Speed: Operates with a high data rate, supporting speeds up to DDR4-3200, which enhances bandwidth and performance for demanding applications.
3. Voltage: Functions at a standard DDR4 voltage of 1.2V, ensuring energy-efficient operations and reduced power consumption.
4. Temperature Range: Designed for industrial temperatures, it can operate within a range of -40°C to 95°C, making it suitable for use in more extreme environments.
5. Package: Comes in a compact FBGA (Fine-pitch Ball Grid Array) package, allowing for efficient use of space on PCBs.
6. Reliability Features: Incorporates on-die error correction (ECC) for improved data integrity and reliability, critical for enterprise-level applications.
These features make the MT40A256M16GE-083EIT:B suitable for a range of applications, including networking, telecommunications, and industrial systems where high performance and reliability are essential.
1. Density and Organization: It has a density of 4Gb and is organized as 256M x 16, making it suitable for high-density memory applications.
2. Clock Speed: Operates with a high data rate, supporting speeds up to DDR4-3200, which enhances bandwidth and performance for demanding applications.
3. Voltage: Functions at a standard DDR4 voltage of 1.2V, ensuring energy-efficient operations and reduced power consumption.
4. Temperature Range: Designed for industrial temperatures, it can operate within a range of -40°C to 95°C, making it suitable for use in more extreme environments.
5. Package: Comes in a compact FBGA (Fine-pitch Ball Grid Array) package, allowing for efficient use of space on PCBs.
6. Reliability Features: Incorporates on-die error correction (ECC) for improved data integrity and reliability, critical for enterprise-level applications.
These features make the MT40A256M16GE-083EIT:B suitable for a range of applications, including networking, telecommunications, and industrial systems where high performance and reliability are essential.
Package
The MT40A256M16GE-083EIT:B is a DRAM chip from Micron, available in a 96-ball FBGA (Fine Ball Grid Array) package type. This packaging supports high-density memory with efficient connectivity and thermal performance, making it suitable for applications requiring reliable and compact memory solutions.
Pinout
The MT40A256M16GE-083EIT:B is a DDR4 DRAM module manufactured by Micron Technology. It is organized as a 256 Meg x 16-bit device, making it a 4Gb (gigabit) memory chip. This component has a 96-ball FBGA (Fine-Pitch Ball Grid Array) package.
The primary functions of this DRAM module include:
1. Data Storage: It is used for temporary data storage in computing systems, providing fast access and storage capabilities for active processes.
2. High-Speed Performance: Operates at high data transfer rates, making it suitable for applications requiring fast data processing such as in servers, desktops, and mobile devices.
3. Low Power Consumption: Designed to be energy-efficient, contributing to the overall power efficiency of the system it is used in.
The specific pin functions include power supply inputs, data input/output pins, address inputs, clock signals, and control signals such as row address strobe (RAS), column address strobe (CAS), and write enable (WE).
The primary functions of this DRAM module include:
1. Data Storage: It is used for temporary data storage in computing systems, providing fast access and storage capabilities for active processes.
2. High-Speed Performance: Operates at high data transfer rates, making it suitable for applications requiring fast data processing such as in servers, desktops, and mobile devices.
3. Low Power Consumption: Designed to be energy-efficient, contributing to the overall power efficiency of the system it is used in.
The specific pin functions include power supply inputs, data input/output pins, address inputs, clock signals, and control signals such as row address strobe (RAS), column address strobe (CAS), and write enable (WE).
Manufacturer
The MT40A256M16GE-083EIT:B is a product manufactured by Micron Technology, Inc. Micron is an American company that specializes in the production of semiconductor devices, primarily dynamic random-access memory (DRAM), flash memory, and solid-state drives (SSDs). The company is one of the leading global providers of memory solutions and plays a significant role in the technology industry by supporting a wide range of applications, including computing, networking, and mobile devices. Micron is known for its innovation in memory technology and its contributions to advancing data storage and management solutions.
Application
The MT40A256M16GE-083EIT:B is a DRAM component used primarily in computing and electronic applications requiring high-speed data processing and large memory capacity. Key application areas include servers, workstations, networking equipment, telecommunications systems, and consumer electronics like high-performance PCs and gaming consoles. Its specifications make it suitable for environments demanding efficient memory performance and reliability.
Equivalent
The MT40A256M16GE-083EIT:B is a DDR4 SDRAM chip by Micron. Equivalent products are typically other DDR4 SDRAM chips with similar specifications from different manufacturers. These may include:
1. Samsung: K4A4G165WE-BCRC
2. SK Hynix: H5AN4G8NBJR-UHC
3. Kingston: D9TBH
Ensure you cross-check specifications like memory size, speed, voltage, and operating temperature to confirm compatibility.
1. Samsung: K4A4G165WE-BCRC
2. SK Hynix: H5AN4G8NBJR-UHC
3. Kingston: D9TBH
Ensure you cross-check specifications like memory size, speed, voltage, and operating temperature to confirm compatibility.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
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