MT40A1G8WE-083E:B

画像は参照用のみです。

MT40A1G8WE-083E:B

DRAM DDR4 8G 1GX8 FBGA

100% オリジナル &新しい

出荷の準備ができている24時間

365日の保証

RFQおよびもっと割引を得る

仕様

Packaging Tray
Standard Pack Qty 1140

概要

Description

MT40A1G8WE-083E:B is a memory chip produced by Micron Technology, specifically a DRAM (Dynamic Random Access Memory) module. This particular part is designed for use in various electronic applications, including computers and other devices that require volatile memory with high performance.
Key specifications include:
- Type: DDR3 SDRAM (Double Data Rate 3 Synchronous Dynamic RAM)
- Capacity: 1 Gigabit (1G x 8 lanes)
- Speed: Operates at a frequency of 1066 MT/s (Megatransfers per second)
- Package: Most likely available in a BGA (Ball Grid Array) format, enhancing thermal performance and reducing space on PCBs.
This chip is ideal for applications needing fast, efficient memory with moderate power consumption, suitable for both consumer and industrial products. Its reliability and performance make it a popular choice in modern electronic designs.

Features

The MT40A1G8WE-083E:B is a DDR4 SDRAM memory module produced by Micron Technology. Here are its key features:
1. Density: 8 Gigabits (1GB x 8).
2. Organization: x8 organization, suitable for various applications.
3. Speed: Operates at a data rate of 2400 MT/s (megatransfers per second).
4. Voltage: Typically operates at 1.2V, offering reduced power consumption compared to previous DDR generations.
5. Timing: CAS latency of CL17 provides an optimal balance between speed and efficiency.
6. Package: Available in a 78-ball, FBGA (Fine Ball Grid Array) package.
7. Temperature Range: Supports industrial temperature ranges, making it suitable for various environments.
8. Applications: Ideal for use in servers, workstations, and high-performance computing systems.
Overall, the MT40A1G8WE-083E:B is designed for reliable performance and efficiency in modern computing applications.

Package

The MT40A1G8WE-083E:B is a DRAM memory chip packaged in a 78-ball TFBGA (Thin Fine Ball Grid Array) package. This type of package is commonly used for memory devices due to its compact design and efficient thermal performance.

Pinout

The MT40A1G8WE-083E:B is an 8 Gb (1 GB) DDR3 SDRAM memory chip. It typically features a pin count of 78 pins, complying with the DDR3 SO-DIMM (Small Outline Dual In-line Memory Module) package specifications.
The primary functions of this chip include serving as volatile memory for data storage in various applications such as computers, servers, and embedded systems. It operates with a DDR3 interface, which allows for high-speed data transfer rates, making it suitable for performance-sensitive applications. The chip supports a clock frequency of up to 800 MHz and includes features like on-die termination (ODT) for improved signal integrity.
Overall, the MT40A1G8WE-083E:B is designed to provide efficient and fast memory solutions, leveraging advanced DRAM technology.

Manufacturer

The manufacturer of the MT40A1G8WE-083E:B is Micron Technology, Inc. Micron is a leading American global manufacturer of semiconductor devices, particularly known for its memory and storage solutions, including DRAM, NAND flash memory, and SSDs (solid-state drives). Founded in 1978 and headquartered in Boise, Idaho, Micron serves a wide range of industries, including computing, mobile, automotive, and consumer electronics, providing essential components for various applications. The company is recognized for its innovation in memory technology and plays a significant role in advancing the capabilities of digital devices.

Application

The MT40A1G8WE-083E:B is a DDR4 DRAM memory chip typically used in applications such as data centers, servers, networking equipment, and high-performance computing systems. It is designed for tasks requiring high bandwidth and low latency, making it suitable for cloud computing, virtualization, big data analytics, and AI workloads. Additionally, it can be found in consumer electronics, laptops, and gaming systems for enhanced performance.

Equivalent

The MT40A1G8WE-083E:B is a 1GB DDR3 SDRAM chip. Equivalent products include:
1. Hynix H5TQ2G83AFR - DDR3 1GB
2. Samsung K4B4G0846D - DDR3 1GB
3. Micron MT41J128M16HA - DDR3 1GB
Ensure compatibility with your specific application and check for details like speed and voltage.

出荷

出荷方法私たち

DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。


出荷料参照（DHL/FedEx）:

DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

支払い

Payment Methods

支払い期間は100％前払いです。

現在、下記の支払い方法のみを受け入れています。:

1. ペイパル

2. クレジット・デビットカード

3. ワイヤー 転送

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