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MT40A1G8WE-075E:B

Name: MT40A1G8WE-075E:B
Rating: 4.7 (12 reviews)

IC DRAM 8GBIT PARALLEL 78FBGA

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Mfr。パート #MT40A1G8WE-075E:B
パッケージ FBGA-78
データシート
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仕様

Package	Tray
ProductStatus	Obsolete
MemoryType	Volatile
MemoryFormat	DRAM
Technology	SDRAM - DDR4
MemorySize	8Gb (1G x 8)
MemoryInterface	Parallel
ClockFrequency	1.33 GHz
Voltage-Supply	1.14V ~ 1.26V
OperatingTemperature	0°C ~ 95°C (TC)
MountingType	Surface Mount
Package/Case	78-TFBGA

概要

Description

MT40A1G8WE-075E:B is a Micron DDR3 SDRAM memory die. Key intro points:
- Density/organization: 1 gigabit total, x8 data width (128M x 8 per die).
- Interface: DDR3 SDRAM with standard features (multi-bank arrays, auto-refresh, DLLs, ZQ calibration).
- Voltage: typically 1.5 V (DDR3); DDR3L variants use lower voltage, depending on revision.
- Speed bin: the -075E indicates the device’s speed/timing grade (one of several bin options).
- Package/variant: the trailing B denotes a packaging/lead-free RoHS-compliant variant.
- Use: a component die used on memory modules (DIMMs/ SO-DIMMs) or in other devices; not a standalone module—requires a memory controller and a motherboard/host interface to operate.
- For full specs: consult Micron MT40A1G8WE datasheet.
In short: a single 1 Gb DDR3 DRAM die, x8, with a specific speed bin, used as a building block on memory modules.

Features

MT40A1G8WE-075E:B is a Micron DDR3 SDRAM device. Key features:
- Density/organization: 1 Gbit total, x8 data width
- Banks: 8 banks
- Interface: DDR3 SDRAM with synchronous burst-access
- Speed grade: supports high-speed DDR3 data rates (up to DDR3-1600 MT/s; exact speed depends on the 075E grade)
- Voltage: typically 1.5 V core (DDR3); 1.35 V variants are separate (DDR3L)
- Refresh: auto/self-refresh with ZQ calibration
- Bus features: On-Die Termination (ODT) on address/control/data paths
- Packaging: small-footprint surface-mount package; lead-free options
- Temperature option: extended-temperature variant available (-E); verify in datasheet
Note: For exact timing, voltage, package, and temperature specs, consult the MT40A1G8WE-075E:B datasheet.

Package

Package type: 96-ball fine-pitch FBGA (FBGA96); Pb-free RoHS compliant (suffix B).

Pinout

- Pin count: 96 pins (96-ball BGA).
- Function: Micron MT40A1G8WE-075E:B is a 1 Gbit DDR3 SDRAM device with 8-bit data width (x8). It provides a DRAM memory cell array with standard DDR3 address/command, data I/O, clock, and control pins for use as a memory component in DDR3 systems.

Manufacturer

- Manufacturer: Micron Technology, Inc.
- What kind of company: An American multinational semiconductor company that designs, manufactures, and sells memory and storage technologies (DRAM, NAND flash, SSDs, and related memory products) for computing and data centers.

Application

MT40A1G8WE-075E:B is a Micron DRAM device (1 Gb × 8). Typical application areas:
- Desktops, notebooks, and other system memory
- Servers, storage controllers, and data-center appliances
- Networking/telecom equipment
- Embedded, automotive, and industrial electronics
- Other consumer devices requiring compact, high-density DRAM

Equivalent

Equivalent parts depend on the exact package, speed, and voltage. MT40A1G8WE-075E:B is Micron DDR3 1Gb x8 SDRAM. For precise cross‑references from Samsung, Hynix, and Nanya, please confirm: (a) package type (e.g., FBGA), (b) speed (e.g., DDR3-1066/1333), and (c) operating voltage. I’ll provide exact cross refs.