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MT40A1G8SA-075:E
IC DRAM 8GBIT PARALLEL 78FBGA
- メーカー
- Mfr。パート #MT40A1G8SA-075:E
- パッケージ
- データシート
- 在庫中6797
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Part Status | Obsolete |
| Base Product Number | MT40A1G8 |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR4 |
| Memory Size | 8Gbit |
| Memory Organization | 1G x 8 |
| Memory Interface | Parallel |
| Clock Frequency | 1.33 GHz |
| Voltage - Supply | 1.14V ~ 1.26V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package | 78-TFBGA |
| Supplier Device Package | 78-FBGA (7.5x11) |
| Packaging | Tray |
概要
Description
The MT40A1G8SA-075:E is a DDR4 (Double Data Rate 4) SDRAM memory module manufactured by Micron Technology. It features a capacity of 8 Gigabits (1 Gigabyte) and operates at a data rate of 2400 MT/s (Million Transfers per second). This component is designed for high-performance applications, including servers, workstations, and other computing devices.
Key specifications include a 288-pin DIMM form factor, a voltage requirement of 1.2V, and support for advanced memory features such as ECC (Error-Correcting Code). The "075" in the part number indicates a specific version or configuration, while the "E" typically denotes an extended temperature range or enhanced specifications.
This memory module is built to provide improved bandwidth and efficiency over its predecessors, making it suitable for modern computing tasks that demand high-speed data access and reliable performance.
Key specifications include a 288-pin DIMM form factor, a voltage requirement of 1.2V, and support for advanced memory features such as ECC (Error-Correcting Code). The "075" in the part number indicates a specific version or configuration, while the "E" typically denotes an extended temperature range or enhanced specifications.
This memory module is built to provide improved bandwidth and efficiency over its predecessors, making it suitable for modern computing tasks that demand high-speed data access and reliable performance.
Features
The MT40A1G8SA-075:E is a 1GB DDR3 SDRAM (Dynamic Random Access Memory) module designed by Micron Technology. Key features include:
1. Memory Type: DDR3 SDRAM, providing improved performance and energy efficiency compared to older DDR2 modules.
2. Capacity: 1GB, suitable for various applications that require moderate memory usage.
3. Data Rate: Operates at a data rate of 800 MT/s (megatransfers per second), ensuring fast data access and processing.
4. Form Factor: 64-bit wide, typically used in SO-DIMM configurations for laptops or compact devices.
5. Voltage: Operates at a low voltage of 1.5V, which helps reduce power consumption and heat generation.
6. Density: It is organized in a 8M x 8 configuration, allowing for efficient data storage and retrieval.
7. Applications: Ideal for use in consumer electronics, laptops, and various embedded systems.
Overall, this memory module balances performance, efficiency, and capacity for diverse computing needs.
1. Memory Type: DDR3 SDRAM, providing improved performance and energy efficiency compared to older DDR2 modules.
2. Capacity: 1GB, suitable for various applications that require moderate memory usage.
3. Data Rate: Operates at a data rate of 800 MT/s (megatransfers per second), ensuring fast data access and processing.
4. Form Factor: 64-bit wide, typically used in SO-DIMM configurations for laptops or compact devices.
5. Voltage: Operates at a low voltage of 1.5V, which helps reduce power consumption and heat generation.
6. Density: It is organized in a 8M x 8 configuration, allowing for efficient data storage and retrieval.
7. Applications: Ideal for use in consumer electronics, laptops, and various embedded systems.
Overall, this memory module balances performance, efficiency, and capacity for diverse computing needs.
Package
The MT40A1G8SA-075:E is a DDR4 SDRAM memory chip that typically comes in a standard FBGA (Fine Ball Grid Array) package type.
Pinout
The MT40A1G8SA-075:E is a DDR3 SDRAM memory chip with a pin count of 78. It operates at a data rate of up to 1066 MT/s and has a density of 1 Gigabit. The chip is designed for various applications, including mobile devices and computing systems, providing features such as low power consumption and high-speed performance.
Key functions of the MT40A1G8SA-075:E include providing random access memory for temporary data storage, supporting burst access for efficient data handling, and operating with a standard voltage of 1.5V. The chip interfaces with the memory controller via a 16-bit data bus and supports various functionalities like refresh, read, and write operations.
Overall, it is suitable for applications that require reliable and high-performance memory solutions.
Key functions of the MT40A1G8SA-075:E include providing random access memory for temporary data storage, supporting burst access for efficient data handling, and operating with a standard voltage of 1.5V. The chip interfaces with the memory controller via a 16-bit data bus and supports various functionalities like refresh, read, and write operations.
Overall, it is suitable for applications that require reliable and high-performance memory solutions.
Manufacturer
The manufacturer of the MT40A1G8SA-075:E is Micron Technology, Inc. Micron is a global leader in memory and storage solutions, specializing in semiconductor products such as DRAM, NAND flash memory, and solid-state drives. Founded in 1978 and headquartered in Boise, Idaho, Micron serves a wide range of markets, including computing, mobile, automotive, and industrial applications. The company is known for its innovation in memory technology and plays a significant role in the advancement of data storage and processing capabilities across various industries.
Application
The MT40A1G8SA-075:E is a high-performance DDR3 SDRAM memory chip, commonly used in applications such as consumer electronics, networking equipment, servers, and mobile devices. Its features support high-speed data processing, making it suitable for gaming consoles, laptops, and embedded systems requiring efficient memory solutions.
Equivalent
The MT40A1G8SA-075:E chip is a 1Gb DDR3 SDRAM memory chip. Equivalent products may include the following:
1. Hynix H5TQ1G83AFR
2. Samsung K4B4G0846E
3. Micron MT41K128M16HA-125
4. Elpida EDJ4104BBG
Always verify compatibility with specific applications and system requirements.
1. Hynix H5TQ1G83AFR
2. Samsung K4B4G0846E
3. Micron MT41K128M16HA-125
4. Elpida EDJ4104BBG
Always verify compatibility with specific applications and system requirements.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
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