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MT40A1G8SA-062E:J

Name: MT40A1G8SA-062E:J
Rating: 4.7 (12 reviews)

IC DRAM 8GBIT PARALLEL 78FBGA

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Mfr。パート #MT40A1G8SA-062E:J
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仕様

Part Status	Obsolete
Base Product Number	MT40A1G8
DigiKey Programmable	Not Verified
Memory Type	Volatile
Memory Format	DRAM
Technology	SDRAM - DDR4
Memory Size	8Gbit
Memory Organization	1G x 8
Memory Interface	Parallel
Clock Frequency	1.6 GHz
Write Cycle Time - Word, Page	15ns
Voltage - Supply	1.14V ~ 1.26V
Operating Temperature	0°C ~ 95°C (TC)
Mounting Type	Surface Mount
Package	78-TFBGA
Supplier Device Package	78-FBGA (7.5x11)
Packaging	Tray
Access Time	19 ns

概要

Description

MT40A1G8SA-062E:J is a Micron DRAM device from the MT40A1G8SA family. It is a 1 Gbit density SDRAM die with an 8-bit data interface (x8). The part is used as a memory component on DIMMs or other memory modules and in systems requiring low‑power, high‑density DRAM.
The suffixes:
- -062E likely denotes a speed grade/voltage option and timing characteristics.
- :J typically reflects packaging/ RoHS lead-free status.
Exact electrical specs (voltage, timing, speed, temperature range, package) are specified in Micron’s MT40A1G8SA-062E/J datasheet.
If you want, I can fetch the latest Micron datasheet and summarize the key specs (density, organization, speed, voltage, timings, packaging) for you.

Features

MT40A1G8SA-062E:J is Micron’s MT40A1G8SA family DDR3 SDRAM die. Key features:
- Density/organization: 1 Gbit total, 128 M × 8
- Type: DDR3 SDRAM (synchronous, unbuffered)
- Banks: 8 banks
- Operating voltage: 1.5 V
- Speed grade: -062E (JEDEC-compliant; speed per datasheet)
- Features: auto/self-refresh, partial array refresh, DLL, ZQ calibration, programmable mode registers (MR), deep power-down
- Packaging: Micron FBGA (RoHS-compliant) variant
- Applications: memory devices for laptops, embedded/board-level use
Note: Exact timing, voltage tolerances, and temperature range depend on the specific lot and packaging; consult the official datasheet for precise numbers.

Package

96-ball FBGA (FBGA-96), lead-free/RoHS compliant.

Pinout

- Pin count: 96 balls (FBGA package)
- Function: Micron MT40A1G8SA-062E:J is a 1 Gb DDR3 SDRAM device with x8 data width (dynamic RAM for system memory).

Manufacturer

Manufacturer: Micron Technology, Inc.
What kind of company: An American multinational semiconductor company that designs, manufactures, and markets memory and storage technologies (DRAM, NAND flash, etc.). Headquartered in Boise, Idaho; one of the world’s largest memory manufacturers.

Application

MT40A1G8SA-062E:J is a Micron DRAM device (high-density, low-voltage SDRAM) used as main system memory. Typical applications:
- Desktop and notebook PCs
- Servers and workstations
- Networking equipment (routers, switches)
- Storage controllers
- Embedded/industrial systems requiring compact, energy-efficient DRAM
Note: exact speed/family may vary; refer to the datasheet for specifics.

Equivalent

MT40A1G8SA-062E:J is Micron DDR3L SDRAM, 1 Gb density, x8 organization, 1.35 V. Equivalents are other vendors’ DDR3L 1 Gb ×8 parts with the same package and timing (e.g., from Hynix, Samsung, Nanya). For exact substitutes, use a cross-reference tool and match package type, speed grade/timing, voltage, and density.