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MT29F4G08ABBEAH4:E

Name: MT29F4G08ABBEAH4:E
Rating: 4.7 (12 reviews)

IC FLASH 4GBIT PARALLEL 63VFBGA

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Mfr。パート #MT29F4G08ABBEAH4:E
パッケージ 63-VFBGA
データシート
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仕様

Package	Bulk
ProductStatus	Obsolete
MemoryType	Non-Volatile
MemoryFormat	FLASH
Technology	FLASH - NAND
MemorySize	4Gb (512M x 8)
MemoryInterface	Parallel
Voltage-Supply	1.7V ~ 1.95V
OperatingTemperature	0°C ~ 70°C (TA)
MountingType	Surface Mount
Package/Case	63-VFBGA

概要

Description

MT29F4G08ABBEAH4 is Micron’s 4-Gbit NAND flash memory device. It provides non-volatile storage for embedded systems and consumer electronics and is intended to be used with a flash controller (ECC, wear leveling, and bad-block management are handled by the controller/firmware). It uses a NAND architecture with page and block organization, requires erasing before programming, and follows the ONFi-compatible command set with an x8 data bus. The exact electrical characteristics (page size, block size, endurance, voltage ranges) are specified in the Micron MT29F4G08ABBEAH4 datasheet.
Notes:
- The suffix sequence (ABBEAH4) encodes manufacturing options, package, and temperature/grade variants.
- The trailing “:E” in MT29F4G08ABBEAH4:E is not a standard part of the device designation; its meaning should be clarified in the specific datasheet or product bulletin for that revision.

Features

MT29F4G08ABBEAH4:E is a Micron 4‑Gbit NAND flash device. Key features:
- MLC NAND flash with x8 data interface
- ONFI‑compliant (standardized flash interface)
- Page size: 2 KB user data with a spare area (typical)
- Blocks organized for multi‑plane operation (up to multiple planes) to boost throughput
- Supports cache/program features and copy‑back operations
- Random read/write capability with block/page level access
- Built‑in bad‑block management and wear leveling
- On‑die ECC support with controller ECC for data integrity
- Power‑saving modes and standby options
- Suitable for consumer/mobile/embedded applications with high reliability requirements

Package

FBGA (Fine-Pitch Ball Grid Array) package.

Pinout

- Pin count: 48 pins (48-pin TSOP package).
- Function: Micron MT29F4G08ABBEAH4:E is a 4 Gbit NAND Flash memory with a x8 data bus. It provides non-volatile storage with standard NAND signals: DQ0–DQ7 data I/O, address/command inputs via ALE/CLE, control signals CE#, WE#, RE#, WP#, R/B# (Ready/Busy), plus power pins (VCC/VSS, and VCCQ as applicable).

Manufacturer

Manufacturer: Micron Technology, Inc.
What kind of company: An American multinational semiconductor company that designs and manufactures memory and storage products (DRAM, NAND/NOR flash), and is one of the world's leading memory chip producers.

Application

MT29F4G08ABBEAH4:E is a 4‑Gbit NAND Flash (x8 I/O) with extended temperature grade (-40 to 85°C). Typical application areas:
- Embedded storage in consumer electronics and portable devices
- SSDs and storage modules
- Digital cameras, camcorders, MP3 players
- USB drives and memory cards
- Automotive and industrial equipment, networking gear requiring reliable storage in harsh environments
- Firmware storage and data logging in embedded systems

Equivalent

MT29F4G08ABBEAH4:E is a Micron 4Gbit NAND Flash (x8). Cross-equivalents depend on package/voltage. Do you want equivalents from Kioxia, Samsung, Winbond, etc.? If yes, please specify package type (FBGA/TSOP), operating voltage (e.g., 3.3V), and temp grade, and I’ll provide a concise cross-reference.