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MT29F4G08ABBDAHC-IT:D
IC FLASH 4GBIT PARALLEL 63VFBGA
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- Mfr。パート #MT29F4G08ABBDAHC-IT:D
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仕様
| Part Status | Last Time Buy |
| Base Product Number | MT29F4G08 |
| DigiKey Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 4Gbit |
| Memory Organization | 512M x 8 |
| Memory Interface | Parallel |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package | 63-VFBGA |
| Supplier Device Package | 63-VFBGA (10.5x13) |
| Packaging | Tray |
概要
Description
The MT29F4G08ABBDAHC-IT:D is a Flash memory device from Micron Technology, specifically designed for embedded applications. It features a 4 Gb (gigabit) NAND architecture, making it suitable for various storage needs in consumer electronics, automotive, and industrial applications. The device operates with a supply voltage of 3.3V and supports high-speed data transfer.
This NAND Flash includes features such as advanced error correction code (ECC), enabling reliable data storage and retrieval. It employs a toggle DDR interface, which enhances performance by allowing simultaneous read and write operations. The device is organized in pages and blocks, facilitating efficient data management and wear leveling.
The “-IT” designation indicates a temperature range suitable for industrial applications, ensuring stability under varying environmental conditions. Overall, the MT29F4G08ABBDAHC-IT:D combines high storage density with robust performance, making it an excellent choice for applications requiring reliable and efficient data storage solutions.
This NAND Flash includes features such as advanced error correction code (ECC), enabling reliable data storage and retrieval. It employs a toggle DDR interface, which enhances performance by allowing simultaneous read and write operations. The device is organized in pages and blocks, facilitating efficient data management and wear leveling.
The “-IT” designation indicates a temperature range suitable for industrial applications, ensuring stability under varying environmental conditions. Overall, the MT29F4G08ABBDAHC-IT:D combines high storage density with robust performance, making it an excellent choice for applications requiring reliable and efficient data storage solutions.
Features
The MT29F4G08ABBDAHC-IT:D is a NAND flash memory device from Micron Technology, designed for high-performance applications. Key features include:
1. Capacity: 4 Gb (Gigabits) of storage.
2. Interface: Supports ONFI 2.2, facilitating easy integration into various systems.
3. NAND Type: Uses 2-bit per cell (MLC) technology, providing a good balance between cost and performance.
4. Operating Voltage: Typically operates at 2.7V to 3.6V, ensuring compatibility with a wide range of devices.
5. Page Size: 4 KB page size, optimizing data management and access speed.
6. Block Size: 128 KB block size, allowing efficient erasing and programming.
7. Endurance: Rated for up to 3,000 program/erase cycles, suitable for consumer and industrial applications.
8. Temperature Range: Industrial grade (-40°C to +85°C), supporting harsh environment applications.
9. Package: Available in a compact BGA package, facilitating space-efficient designs.
This device is ideal for applications like smartphones, tablets, and embedded systems requiring reliable and high-density storage.
1. Capacity: 4 Gb (Gigabits) of storage.
2. Interface: Supports ONFI 2.2, facilitating easy integration into various systems.
3. NAND Type: Uses 2-bit per cell (MLC) technology, providing a good balance between cost and performance.
4. Operating Voltage: Typically operates at 2.7V to 3.6V, ensuring compatibility with a wide range of devices.
5. Page Size: 4 KB page size, optimizing data management and access speed.
6. Block Size: 128 KB block size, allowing efficient erasing and programming.
7. Endurance: Rated for up to 3,000 program/erase cycles, suitable for consumer and industrial applications.
8. Temperature Range: Industrial grade (-40°C to +85°C), supporting harsh environment applications.
9. Package: Available in a compact BGA package, facilitating space-efficient designs.
This device is ideal for applications like smartphones, tablets, and embedded systems requiring reliable and high-density storage.
Package
The MT29F4G08ABBDAHC-IT:D is packaged in a 48-ball FBGA (Fine Ball Grid Array) format. This compact design allows for efficient space utilization on PCBs while providing reliable electrical connections.
Pinout
The MT29F4G08ABBDAHC-IT:D is a NAND Flash memory device with a pin count of 48 pins. It features a 4 GB density and operates using a NAND interface.
The primary functions of the device include:
- Data Storage: It provides non-volatile storage for data and code.
- Data Transfer: Supports high-speed data transfer through a parallel interface.
- Block Management: Includes features for block erasure and programming to optimize performance and wear leveling.
- Read and Write Operations: Facilitates random and sequential read/write capabilities.
This NAND Flash device is commonly used in applications such as mobile phones, tablets, and embedded systems due to its compact size and efficient performance.
The primary functions of the device include:
- Data Storage: It provides non-volatile storage for data and code.
- Data Transfer: Supports high-speed data transfer through a parallel interface.
- Block Management: Includes features for block erasure and programming to optimize performance and wear leveling.
- Read and Write Operations: Facilitates random and sequential read/write capabilities.
This NAND Flash device is commonly used in applications such as mobile phones, tablets, and embedded systems due to its compact size and efficient performance.
Manufacturer
The manufacturer of the MT29F4G08ABBDAHC-IT:D is Micron Technology, Inc. Micron is a global leader in the semiconductor industry, specializing in memory and storage solutions, including DRAM, NAND flash memory, and other related technologies. Founded in 1978 and headquartered in Boise, Idaho, Micron designs and manufactures a wide range of memory products for various applications, including computing, mobile devices, automotive, and enterprise storage. The company plays a significant role in advancing memory technology and is recognized for its innovation and contributions to the semiconductor market.
Application
The MT29F4G08ABBDAHC-IT:D is a NAND Flash memory device used primarily in consumer electronics, mobile devices, and embedded systems. Its applications include smartphones, tablets, digital cameras, automotive infotainment systems, and industrial automation. The device is designed for high-density storage, data logging, and firmware updates, making it suitable for applications requiring reliable non-volatile memory.
Equivalent
The MT29F4G08ABBDAHC-IT:D is a NAND flash memory chip. Equivalent products include the Samsung K9GAG08U0M, Micron MT29F4G08ABAEAWP, and Hynix H26M31001G. Always verify compatibility based on specific application requirements and configurations.
出荷
出荷方法私たち
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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