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MT29F384G08EBCBBJ4-37:B
IC FLASH 384GBIT PAR 132VBGA
- メーカー
- Mfr。パート #MT29F384G08EBCBBJ4-37:B
- パッケージ 132-VBGA
- データシート
- 在庫中6994
100% オリジナル &新しい
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365日の保証
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仕様
| Package | Tray |
| ProductStatus | Obsolete |
| MemoryType | Non-Volatile |
| MemoryFormat | FLASH |
| Technology | FLASH - NAND |
| MemorySize | 384Gb (48G x 8) |
| MemoryInterface | Parallel |
| ClockFrequency | 267 MHz |
| Voltage-Supply | 2.7V ~ 3.6V |
| OperatingTemperature | 0°C ~ 70°C (TA) |
| MountingType | Surface Mount |
| Package/Case | 132-VBGA |
概要
Description
MT29F384G08EBCBBJ4-37:B is a Micron NAND flash memory device (MT29F family). It provides a high-density, non-volatile storage layer with 384 Gbit of capacity on an 8-bit data bus (x8). It is ONFi-compatible and used as storage in SSDs, USB drives, embedded systems, etc. The device is organized into pages and blocks (typical NAND architecture), supports standard operations such as page program, block erase, and random read, and includes features for wear leveling and bad-block management. It also requires ECC support from the controller to correct errors inherent in flash memory. The exact electrical specs (voltages, timing), organization (page and block sizes), endurance, and other performance characteristics are defined in the official datasheet for this exact part number (MT29F384G08EBCBBJ4-37:B). If you need precise figures, refer to Micron’s datasheet.
Features
Here are the typical features you’d expect for the Micron MT29F384G08EBCBBJ4-37:B (official datasheet should confirm exact numbers):
- 384 Gbit (48 GB) NAND Flash capacity
- 3D NAND architecture (high density, improved endurance/reliability)
- ONFI-compatible NAND interface
- Large page size with spare area (commonly 2 KB main + 128 B OOB; exact sizes in datasheet)
- Multi-plane/multi-die operation for high throughput
- On-chip ECC and error-management (wear leveling, bad-block management)
- Copy-back, cache program, and other performance/management features
- Data integrity features and robust reliability for various operating conditions
Note: For exact page/OOB sizes, interface version (ONFI spec), endurance (P/E cycles), voltage ranges, and other device-specific timings, please refer to the official MT29F384G08EBCBBJ4-37:B datasheet.
- 384 Gbit (48 GB) NAND Flash capacity
- 3D NAND architecture (high density, improved endurance/reliability)
- ONFI-compatible NAND interface
- Large page size with spare area (commonly 2 KB main + 128 B OOB; exact sizes in datasheet)
- Multi-plane/multi-die operation for high throughput
- On-chip ECC and error-management (wear leveling, bad-block management)
- Copy-back, cache program, and other performance/management features
- Data integrity features and robust reliability for various operating conditions
Note: For exact page/OOB sizes, interface version (ONFI spec), endurance (P/E cycles), voltage ranges, and other device-specific timings, please refer to the official MT29F384G08EBCBBJ4-37:B datasheet.
Package
FBGA (fine-pitch Ball Grid Array) package.
Pinout
- Pin count: 48 pins (TSOP-II package).
- Function: Micron MT29F384G08EBCBBJ4-37:B is a 384‑Gbit NAND Flash memory with an 8‑bit data bus (DQ[7:0]). It uses a multiplexed address/command interface with standard NAND signals: CLE, ALE, WE#, RE#, CE#, WP#, R/B#, DQ[7:0], address pins, and power pins (Vcc, Vccq) plus GND.
- Function: Micron MT29F384G08EBCBBJ4-37:B is a 384‑Gbit NAND Flash memory with an 8‑bit data bus (DQ[7:0]). It uses a multiplexed address/command interface with standard NAND signals: CLE, ALE, WE#, RE#, CE#, WP#, R/B#, DQ[7:0], address pins, and power pins (Vcc, Vccq) plus GND.
Manufacturer
- Manufacturer: Micron Technology, Inc.
- What kind of company: An American multinational semiconductor company and one of the world’s leading memory and storage manufacturers, designing and producing DRAM, NAND/NOR flash, and solid-state storage. Headquartered in Boise, Idaho (founded 1978).
- What kind of company: An American multinational semiconductor company and one of the world’s leading memory and storage manufacturers, designing and producing DRAM, NAND/NOR flash, and solid-state storage. Headquartered in Boise, Idaho (founded 1978).
Application
Application areas for MT29F384G08EBCBBJ4-37:B (high‑density NAND flash):
- Client and enterprise SSDs
- Embedded storage in mobile/consumer devices (tablets, cameras, set‑top boxes)
- USB drives and memory cards
- Industrial and automotive applications (telematics, data logging, infotainment)
- Client and enterprise SSDs
- Embedded storage in mobile/consumer devices (tablets, cameras, set‑top boxes)
- USB drives and memory cards
- Industrial and automotive applications (telematics, data logging, infotainment)
Equivalent
Equivalents are other Micron devices in the MT29F384G08EBCBBJ4-37 family (same 384 Gbit, x8, ONFI timing). For exact cross-references or drop-in substitutes from other vendors, use Micron’s Product Selector or contact a distributor—no widely published direct equivalents are available.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
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