画像は参照用のみです。

MT29F2G16ABBEAHC:E

Name: MT29F2G16ABBEAHC:E
Rating: 4.7 (12 reviews)

IC FLASH 2GBIT PARALLEL 63VFBGA

メーカー
Mfr。パート #MT29F2G16ABBEAHC:E
パッケージ 63-VFBGA
データシート
在庫中6256

+BOM RFQについて

100% オリジナル &新しい

出荷の準備ができている24時間

365日の保証

RFQおよびもっと割引を得る

仕様

Supplier	Micron Technology Inc.
Package	Bulk
ProductStatus	Obsolete
MemoryType	Non-Volatile
MemoryFormat	FLASH
Technology	FLASH - NAND
MemorySize	2Gb (128M x 16)
MemoryInterface	Parallel
Voltage-Supply	1.7V ~ 1.95V
OperatingTemperature	0°C ~ 70°C (TA)
MountingType	Surface Mount
Package/Case	63-VFBGA

概要

Description

MT29F2G16ABBEAHC:E is Micron’s NAND flash memory device. It provides 2 Gbit (256 MB) of non-volatile storage and uses a 16-bit-wide data bus (x16). The device uses an ONFI-compatible asynchronous NAND interface and is aimed at embedded storage and lightweight SSD/applications. Data is written and read in pages and organized into erase blocks; typical operations include page program, page read, and block erase, with ECC handled by the controller. The trailing “:E” (and the ABBEAHC code) denotes a specific package/temperature/variant revision, so exact electrical characteristics (page size, block size, voltages, endurance) vary by revision. For precise specs, consult the MT29F2G16ABBEAHC:E datasheet.

Features

MT29F2G16ABBEAHC:E features (highlights)
- Capacity: 2 Gb NAND Flash (MLC)
- Interface: x16 data bus (16-bit I/O)
- Type: NAND Flash memory with multi-plane support
- Standard: ONFI-compliant interface
- Page/Block: typical page size ~2 KB with spare area (typical layouts used in Micron devices)
- Performance features: multi-plane read/write, cache/program-verify options (enhanced throughput)
- Endurance/Retention: typical P/E cycles in the low thousands; data retention around 10 years (specs vary by grade)
- Temperature: extended-temperature option available (e.g., -40°C to 85°C variant)
- Power: designed for low-power operation with standard Vcc/I/O ranges for Micron NAND (system ECC required in controller)
- Packaging: designed for embedded/SSD-style use with standard Micron packaging (BGA/TSOP variants per need)
Note: Exact page structure, block size, voltages, and endurance can vary by lot/grade; consult the specific datasheet for precise numbers for your revision.

Package

Fine-pitch Ball Grid Array (FBGA) package.

Pinout

- Pin count: 60 pins (FBGA package)
- Function: Micron MT29F2G16ABBEAHC:E is a 2 Gb NAND Flash memory with a wide 16-bit data bus (x16) and an asynchronous NAND interface. Signals include DQ[15:0] (data I/O), CLE, ALE, CE, WE, RE, R/B (Ready/Busy), WP (Write Protect), VCC/VCCQ and GND. Operation follows the standard NAND flash protocol (program, read, erase) with ONFI-compatible timing per the device variant.

Manufacturer

Manufacturer: Micron Technology, Inc.
About the company: It is an American multinational semiconductor company that designs and manufactures memory and storage products (e.g., DRAM and NAND flash). Headquartered in Boise, Idaho, it is one of the world's largest memory manufacturers.

Application

MT29F2G16ABBEAHC:E is a 2Gbit (256MB) x16 NAND flash memory. Common applications:
- Embedded systems for non-volatile storage of firmware and data
- Consumer electronics (digital cameras, camcorders, MP3 players, handheld consoles)
- Mobile devices and tablets
- Set-top boxes, TVs, and streaming devices
- Automotive and industrial controllers requiring reliable flash for firmware/data storage

Equivalent

MT29F2G16ABBEAHC:E is Micron’s 2-Gbit x16 asynchronous NAND flash. There is no published exact cross-reference. To find substitutes, use Micron or distributor cross-reference tools and look for other 2-Gbit x16 asynchronous NANDs with the same package/ECC and voltage (typically around 1.8V).