MT29F2G16ABBEAH4-AAT:E

MT29F2G16ABBEAH4-AAT:E? is a Micron NAND flash memory device. It belongs to the MT29F2G16ABBEAH4 family and is a non-volatile storage chip used in embedded systems and SSDs.
Key points:
- Capacity and width: 2 Gbit total capacity with a 16-bit (x16) data interface.
- Technology and organization: NAND flash (MLC) with page/block architecture and ECC requirements; ONFI-compatible interface.
- Package/grade: suffixes like -AAT indicate temperature grade and packaging variants; -E and similar endings denote additional options. Exact specs vary by revision, so check the specific datasheet for this exact suffix.
- Typical use: primary storage in embedded devices, microcontroller-based systems, or as part of larger NAND-based storage solutions.
- Important considerations: wear on erase cycles, need for wear leveling and ECC, and proper controller support to issue commands, manage bad block replacement, and perform refresh/maintenance.
For precise electrical characteristics, page size, block size, timing, endurance, and temperature range, refer to the Micron MT29F2G16ABBEAH4-AAT:E data sheet and the module/package variant documentation.

Here are the key features of MT29F2G16ABBEAH4-AAT:E:
- Density: 2 Gb (256 MB) NAND Flash
- Interface: x16 I/O, ONFI-compliant
- Page/Spare: 2 KB page size with 64 B spare per page
- Organization: multi-plane capable
- Operations: supports random read/write, cache program/read
- ECC: built-in BCH ECC for data integrity
- Endurance: typical around 100,000 program/erase cycles
- Data retention: ~10 years
- Voltage: 3.3V nominal supply
- Temperature: extended operating range, typically -40°C to 85°C
- Package: standard Micron NAND package format (surface-mount)
Note: exact ONFI version and plane count may vary by revision.

FBGA (Fine-pitch Ball Grid Array) package.

- Pin count: 60 pins (FBGA60 package)
- Function: 2 Gbit NAND flash memory with a 16-bit data bus (x16). It is a parallel NAND flash device used for non-volatile storage, with standard NAND interface signals (CLE, ALE, WE#, RE#, CE#, WP#, R/B#), DQ0–DQ15, address lines, VCC, and VSS.

- Manufacturer: Micron Technology, Inc.
- What kind of company: An American multinational semiconductor company that designs and manufactures memory and storage technologies (DRAM, NAND/NOR flash, SSDs) and related memory solutions.

MT29F2G16ABBEAH4-AAT:E is a NAND flash memory device. Common application areas:
- Embedded storage for mobile devices, cameras/camcorders
- Boot/firmware storage for microcontrollers/SoCs
- Solid-state drives and removable storage (USB/SD)
- Automotive/industrial electronics (infotainment, ECUs, data logging)
- Networking equipment and set-top boxes
- Any system needing compact, reliable non-volatile storage.

MT29F2G16ABBEAH4-AAT:E is a Micron 2‑Gbit NAND Flash, x16 I/O, 1.8V, extended‑temperature. Direct equivalents are only other devices in the MT29F2G16ABBEAH4 family. There are no published exact cross‑vendor substitutes; use Micron’s Cross‑Reference Tool for precise substitutions. Closest non‑Micron options are other 2Gbit ×16 NANDs from Samsung/Hynix/Winbond, but pinout, timing, and voltage may differ and require verification.