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MT29F2G08ABAEAWP-IT:E
IC FLASH 2GBIT PARALLEL 48TSOP I
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- Mfr。パート #MT29F2G08ABAEAWP-IT:E
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仕様
| Part Status | Last Time Buy |
| Base Product Number | MT29F2G08 |
| DigiKey Programmable | Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 2Gbit |
| Memory Organization | 256M x 8 |
| Memory Interface | Parallel |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package | 48-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package | 48-TSOP I |
| Packaging | Tray |
概要
Description
The MT29F2G08ABAEAWP-IT:E is a NAND flash memory chip produced by Micron Technology. It features a 2-gigabit (256 MB) capacity, making it suitable for various applications, including mobile devices, embedded systems, and consumer electronics. This chip utilizes a 1.8V power supply, providing low power consumption which is essential for battery-operated devices.
The NAND architecture allows for high-speed read and write operations, with a page size of 4K bytes and a block size of 128KB, optimizing performance for data storage and retrieval. The "IT" in the part number indicates that it is an industrial temperature version, designed to operate effectively in a wider range of temperatures, making it ideal for more demanding environments.
Additionally, the suffix "E" signifies that it meets specific environmental and performance standards, contributing to its reliability in various applications. Overall, the MT29F2G08ABAEAWP-IT:E is a robust choice for applications requiring efficient and reliable flash memory solutions.
The NAND architecture allows for high-speed read and write operations, with a page size of 4K bytes and a block size of 128KB, optimizing performance for data storage and retrieval. The "IT" in the part number indicates that it is an industrial temperature version, designed to operate effectively in a wider range of temperatures, making it ideal for more demanding environments.
Additionally, the suffix "E" signifies that it meets specific environmental and performance standards, contributing to its reliability in various applications. Overall, the MT29F2G08ABAEAWP-IT:E is a robust choice for applications requiring efficient and reliable flash memory solutions.
Features
The MT29F2G08ABAEAWP-IT:E is a NAND Flash memory device from Micron. Key features include:
1. Capacity: 2 Gb (256 MB) of storage.
2. Architecture: It utilizes a 2-bit per cell (MLC) architecture, enhancing density and performance.
3. Interface: It supports a NAND Flash interface with ONFI (Open NAND Flash Interface) specifications, providing compatibility and ease of integration.
4. Page Size: The device has a page size of 4 KB, which allows efficient data management.
5. Block Size: The memory is organized into blocks, typically 128 KB, enhancing erase operations.
6. Endurance: It has a high endurance rating suitable for various applications, typically supporting up to 5,000 erase cycles.
7. Temperature Range: Designed for industrial applications, it operates in a wide temperature range, typically from -40°C to 85°C.
8. Applications: Commonly used in consumer electronics, automotive, and industrial devices for data storage.
Overall, this NAND Flash device is designed for reliability and performance in demanding environments.
1. Capacity: 2 Gb (256 MB) of storage.
2. Architecture: It utilizes a 2-bit per cell (MLC) architecture, enhancing density and performance.
3. Interface: It supports a NAND Flash interface with ONFI (Open NAND Flash Interface) specifications, providing compatibility and ease of integration.
4. Page Size: The device has a page size of 4 KB, which allows efficient data management.
5. Block Size: The memory is organized into blocks, typically 128 KB, enhancing erase operations.
6. Endurance: It has a high endurance rating suitable for various applications, typically supporting up to 5,000 erase cycles.
7. Temperature Range: Designed for industrial applications, it operates in a wide temperature range, typically from -40°C to 85°C.
8. Applications: Commonly used in consumer electronics, automotive, and industrial devices for data storage.
Overall, this NAND Flash device is designed for reliability and performance in demanding environments.
Package
The MT29F2G08ABAEAWP-IT:E is a NAND flash memory chip packaged in a TSOP (Thin Small Outline Package). It features a compact design suitable for space-constrained applications, ensuring efficient performance in mobile and embedded systems.
Pinout
The MT29F2G08ABAEAWP-IT:E is a NAND flash memory device with a pin count of 48 pins. It operates as a non-volatile memory solution, typically used in applications such as smartphones, tablets, and other consumer electronics.
The key functions of this NAND flash include data storage, program and erase operations, and interfacing with host systems through a serial or parallel interface. The device supports features like multi-plane operations for improved performance and has built-in error correction capabilities to enhance data integrity.
Additionally, it adheres to the ONFI (Open NAND Flash Interface) specification, which facilitates interoperability with various controllers. The specific pin functions include data input/output, control signals for read/write operations, and power supply connections.
The key functions of this NAND flash include data storage, program and erase operations, and interfacing with host systems through a serial or parallel interface. The device supports features like multi-plane operations for improved performance and has built-in error correction capabilities to enhance data integrity.
Additionally, it adheres to the ONFI (Open NAND Flash Interface) specification, which facilitates interoperability with various controllers. The specific pin functions include data input/output, control signals for read/write operations, and power supply connections.
Manufacturer
The manufacturer of the MT29F2G08ABAEAWP-IT:E is Micron Technology, Inc. Micron is a leading American multinational corporation that specializes in the production of memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron designs and manufactures a variety of semiconductor products, including DRAM, NAND flash memory, and solid-state drives (SSDs). The company's products are widely used in computing, mobile devices, automotive, and various other applications. Micron is recognized for its innovation in memory technology and plays a significant role in the global semiconductor industry.
Application
The MT29F2G08ABAEAWP-IT:E is a NAND flash memory chip commonly used in various applications, including mobile devices, tablets, and consumer electronics for data storage. It is also utilized in automotive systems, industrial applications, and embedded systems due to its high-density storage, reliability, and performance. Additionally, it can be found in solid-state drives (SSDs) and as part of memory solutions in networking and communication devices.
Equivalent
The MT29F2G08ABAEAWP-IT:E is a 2GB NAND Flash memory chip. Equivalent products include:
1. Samsung K9GAG08U0M
2. Hynix H27UBG8T2C
3. Micron MT29F2G08ABAEAWP
4. Toshiba TC58NVG2S0HBAIA
Always verify specifications and compatibility for your specific application before substitution.
1. Samsung K9GAG08U0M
2. Hynix H27UBG8T2C
3. Micron MT29F2G08ABAEAWP
4. Toshiba TC58NVG2S0HBAIA
Always verify specifications and compatibility for your specific application before substitution.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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