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MT29F2G08ABAEAWP:E
IC FLASH 2GBIT PARALLEL 48TSOP I
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- Mfr。パート #MT29F2G08ABAEAWP:E
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仕様
| Part Status | Last Time Buy |
| Base Product Number | MT29F2G08 |
| DigiKey Programmable | Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 2Gbit |
| Memory Organization | 256M x 8 |
| Memory Interface | Parallel |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package | 48-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package | 48-TSOP I |
| Packaging | Tray |
概要
Description
The MT29F2G08ABAEAWP:E is a NAND flash memory device produced by Micron Technology. This specific model offers 2 gigabits of storage capacity and is designed for use in a variety of applications, including mobile devices, consumer electronics, and embedded systems. It features a 1.8V operating voltage for lower power consumption, which is ideal for battery-operated devices.
The device utilizes a multi-level cell (MLC) architecture, allowing it to store multiple bits of data per cell, thereby increasing storage density. It supports advanced error correction and wear leveling algorithms to enhance reliability and longevity. The MT29F2G08ABAEAWP:E is part of Micron's NAND flash family, offering high-speed data transfer rates and robust performance in demanding environments.
This NAND flash solution is packaged in a compact form factor suitable for space-constrained designs, making it a popular choice among manufacturers looking for efficient storage solutions.
The device utilizes a multi-level cell (MLC) architecture, allowing it to store multiple bits of data per cell, thereby increasing storage density. It supports advanced error correction and wear leveling algorithms to enhance reliability and longevity. The MT29F2G08ABAEAWP:E is part of Micron's NAND flash family, offering high-speed data transfer rates and robust performance in demanding environments.
This NAND flash solution is packaged in a compact form factor suitable for space-constrained designs, making it a popular choice among manufacturers looking for efficient storage solutions.
Features
The MT29F2G08ABAEAWP:E is a 2GB NAND Flash memory device from Micron Technology, designed for various applications such as consumer electronics, mobile devices, and embedded systems. Key features include:
1. Density: 2GB capacity, suitable for high-density storage needs.
2. Interface: Supports ONFI 2.1/3.0 interface for efficient data transfer rates.
3. Organization: Configured as 8 bits per word with multiple page sizes, enabling flexible data management.
4. Performance: Offers fast read and write speeds, enhancing overall system performance.
5. Endurance and Reliability: Supports a high number of program/erase cycles, ensuring durability.
6. Power Management: Low power consumption modes for energy efficiency, crucial for mobile applications.
7. Temperature Range: Extended temperature range for reliability in various environmental conditions.
This device is ideal for applications requiring robust data storage and fast access times, balancing performance with power efficiency.
1. Density: 2GB capacity, suitable for high-density storage needs.
2. Interface: Supports ONFI 2.1/3.0 interface for efficient data transfer rates.
3. Organization: Configured as 8 bits per word with multiple page sizes, enabling flexible data management.
4. Performance: Offers fast read and write speeds, enhancing overall system performance.
5. Endurance and Reliability: Supports a high number of program/erase cycles, ensuring durability.
6. Power Management: Low power consumption modes for energy efficiency, crucial for mobile applications.
7. Temperature Range: Extended temperature range for reliability in various environmental conditions.
This device is ideal for applications requiring robust data storage and fast access times, balancing performance with power efficiency.
Package
The MT29F2G08ABAEAWP:E is packaged in a FBGA (Fine Ball Grid Array) format, which features a compact design with solder balls on the underside for mounting on printed circuit boards, offering efficient space utilization and thermal performance.
Pinout
The MT29F2G08ABAEAWP:E is a 2Gb NAND Flash memory device from Micron Technology. It features a 48-pin TSOP (Thin Small Outline Package) configuration. The primary functions of the pins include data input/output, command and control signals, and power supply connections.
Key pin functions include:
- DQ0-DQ7: Data I/O pins for 8-bit data transfer.
- WE: Write Enable, for initiating write operations.
- RE: Read Enable, for initiating read operations.
- CE: Chip Enable, to activate the chip.
- OE: Output Enable, to control data output.
- A00-A20: Address pins, for addressing memory locations.
- VCC: Power supply pin.
- GND: Ground pin.
- R/B: Ready/Busy, indicating the status of the device.
This device is commonly used in various applications, including mobile devices, consumer electronics, and embedded systems due to its high density and reliability.
Key pin functions include:
- DQ0-DQ7: Data I/O pins for 8-bit data transfer.
- WE: Write Enable, for initiating write operations.
- RE: Read Enable, for initiating read operations.
- CE: Chip Enable, to activate the chip.
- OE: Output Enable, to control data output.
- A00-A20: Address pins, for addressing memory locations.
- VCC: Power supply pin.
- GND: Ground pin.
- R/B: Ready/Busy, indicating the status of the device.
This device is commonly used in various applications, including mobile devices, consumer electronics, and embedded systems due to its high density and reliability.
Manufacturer
The manufacturer of the MT29F2G08ABAEAWP:E is Micron Technology, Inc. Micron is a leading American company that specializes in semiconductor manufacturing, particularly in memory and storage solutions. Founded in 1978, Micron produces a range of products, including DRAM, NAND flash memory, and SSDs (solid-state drives), which are widely used in consumer electronics, computing, and data storage applications. The company is known for its innovation in memory technologies and plays a significant role in the global semiconductor market. Micron’s products are integral to various industries, enabling advanced computing capabilities and data management solutions.
Application
The MT29F2G08ABAEAWP:E is a 2Gb NAND flash memory chip commonly used in applications such as smartphones, tablets, solid-state drives (SSDs), embedded systems, and other consumer electronics. Its features support data storage for operating systems, applications, multimedia files, and more, making it suitable for high-performance and reliable storage solutions in various digital devices.
Equivalent
The MT29F2G08ABAEAWP:E chip is a 2Gbit NAND flash memory. Equivalent products include:
1. Toshiba TH58NVG2S0HBAA
2. Samsung K9GAG08U0M
3. Hynix H26M21001G2
4. Micron MT29F2G08ABAEAWP (with different temperature ranges).
Ensure compatibility with your specific application requirements, such as voltage, interface, and speed.
1. Toshiba TH58NVG2S0HBAA
2. Samsung K9GAG08U0M
3. Hynix H26M21001G2
4. Micron MT29F2G08ABAEAWP (with different temperature ranges).
Ensure compatibility with your specific application requirements, such as voltage, interface, and speed.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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