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MT29F2G08ABAEAH4-AITX:E

Name: MT29F2G08ABAEAH4-AITX:E
Rating: 4.7 (12 reviews)

IC FLASH 2GBIT PARALLEL 63VFBGA

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Mfr。パート #MT29F2G08ABAEAH4-AITX:E
パッケージ 63-VFBGA
データシート
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仕様

Supplier	Micron Technology Inc.
Package	Tray
ProductStatus	Active
MemoryType	Non-Volatile
MemoryFormat	FLASH
Technology	FLASH - NAND
MemorySize	2Gb (256M x 8)
MemoryInterface	Parallel
Voltage-Supply	2.7V ~ 3.6V
OperatingTemperature	-40°C ~ 85°C (TA)
MountingType	Surface Mount
Package/Case	63-VFBGA

概要

Description

MT29F2G08ABAEAH4-AITX:E is Micron’s 2‑Gbit NAND flash memory with a 8‑bit data bus (x8). It is ONFI‑compliant and intended for embedded storage systems. Data is stored in pages organized into blocks, with an Out-Of-Band (OOB) area for ECC and metadata. Access requires a NAND flash controller that implements the ONFI command set (read, program, erase, suspend, etc.) and uses ECC, wear leveling, and bad‑block management. The AITX suffix denotes a specific package/variant for board integration; electrical parameters, pinout, and exact timing are package‑dependent and specified in the datasheet. Typical operation involves controller‑driven sequences rather than RAM‑like random access. For detailed electrical specs, timings, endurance, and layout, consult the Micron MT29F2G08ABAEAH4-AITX:E datasheet.

Features

Here are the typical features of MT29F2G08ABAEAH4-AITX:E (2 Gbit NAND, industrial grade):
- Capacity: 2 Gbit (256 MB) NAND Flash
- Type: Multi-Level Cell (MLC) NAND
- Interface: ONFI-compliant, x8 data I/O
- Page/Spare: 2,048-byte main page + 64-byte spare
- Block/Pages: 128 pages per block (≈256 KB/block)
- Operations: Read/Program/Erase with support for multi-plane and interleaving
- Reliability: Bad-block management and wear leveling
- ECC: Requires ECC in the host/controller (on-chip ECC support)
- Electrical: VCC typically 2.7–3.6 V (I/O same range)
- Temperature: Industrial-grade option (commonly -40°C to 85°C)
- Applications: Embedded storage, mobile/industrial applications requiring robust NAND
Note: exact timings, endurance, and some sub-features vary by revision/grade; consult the datasheet for precise specs.

Package

FBGA (ball-grid array) package.

Pinout

- Pin count: 48 pins (TSOP/48-pin package)
- Function: Micron MT29F2G08ABAEAH4-AITX:E is a 2 Gbit NAND flash memory with an 8‑bit data bus; non-volatile storage using a NAND interface (ALE/CLE/WE#/RE#/CE#/WP#, DQ0–DQ7, R/B) with typical 2.7–3.6 V supply.

Manufacturer

- Manufacturer: Micron Technology, Inc.
- What kind of company: An American multinational semiconductor company that designs, manufactures, and sells memory and storage products (e.g., DRAM and NAND flash). Based in Boise, Idaho.

Application

MT29F2G08ABAEAH4-AITX:E is a 2-Gbit NAND flash. Common applications:
- Embedded non-volatile storage in mobile/consumer electronics
- Firmware/boot memory in automotive and industrial systems
- Data storage for cameras, camcorders, and multimedia devices
- Solid-state storage subsystems with an appropriate NAND controller
- Portable/removable storage (USB drives, memory cards) and networking/IoT equipment requiring compact NAND storage

Equivalent

MT29F2G08ABAEAH4-AITX:E is Micron’s 2Gbit (256MB) ONFI-compatible ML NAND flash. Direct cross-refs depend on package, voltage, and temp grade. Closest equivalents are other 2Gbit ONFI-MLC NANDs from major vendors (same density/interface). For exact cross parts, provide: package type (e.g., TSOP48 or BGA), supply voltage (3.3V/1.8V), and operating temperature. I’ll give concrete cross-references.