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MT29F128G08CFABBWP-12IT:B
IC FLASH 128GBIT PAR 48TSOP I
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- Mfr。パート #MT29F128G08CFABBWP-12IT:B
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仕様
| Part Status | Obsolete |
| Base Product Number | MT29F128G08 |
| DigiKey Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 128Gbit |
| Memory Organization | 16G x 8 |
| Memory Interface | Parallel |
| Clock Frequency | 83 MHz |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package | 48-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package | 48-TSOP I |
| Packaging | Tray |
概要
Description
The MT29F128G08CFABBWP-12IT:B is a NAND flash memory chip manufactured by Micron Technology. It features a capacity of 128 gigabits (16 gigabytes) and utilizes a 3D NAND architecture for improved performance and endurance. This particular model operates with a supply voltage of 2.7V to 3.6V and supports various interfaces, including ONFI (Open NAND Flash Interface) for easy integration.
The part number indicates key specifications: "MT" denotes Micron, "29F" signifies NAND flash technology, "128G" indicates the capacity, and "08" refers to the organization of the memory cells. The suffixes "CFABBWP" specify additional features like packaging and temperature range, while "12IT" indicates the speed grade and industrial temperature rating.
This NAND flash is suitable for applications in consumer electronics, automotive systems, and industrial solutions, providing fast read and write speeds, low power consumption, and robust reliability for data storage needs.
The part number indicates key specifications: "MT" denotes Micron, "29F" signifies NAND flash technology, "128G" indicates the capacity, and "08" refers to the organization of the memory cells. The suffixes "CFABBWP" specify additional features like packaging and temperature range, while "12IT" indicates the speed grade and industrial temperature rating.
This NAND flash is suitable for applications in consumer electronics, automotive systems, and industrial solutions, providing fast read and write speeds, low power consumption, and robust reliability for data storage needs.
Features
The MT29F128G08CFABBWP-12IT:B is a NAND flash memory chip from Micron Technology. Here are its key features:
1. Capacity: 128 Gb (16 GB) storage capacity, suitable for various applications.
2. Interface: Supports ONFI (Open NAND Flash Interface) standards, enabling compatibility with various host devices.
3. Architecture: Utilizes a 2-bit per cell (MLC) architecture for enhanced data storage density.
4. Data Transfer Rates: Offers high-speed read/write operations, typically up to 400 MB/s.
5. Endurance: Designed for high endurance, supporting a significant number of program/erase cycles (around 3,000 to 10,000 cycles).
6. Form Factor: Available in a compact BGA (Ball Grid Array) package, facilitating space-saving designs in electronic products.
7. Power Management: Features low power consumption modes, making it suitable for battery-operated devices.
8. Error Correction: Supports advanced error correction features to ensure data integrity.
This chip is ideal for applications such as SSDs, mobile devices, and embedded systems requiring reliable and high-performance storage solutions.
1. Capacity: 128 Gb (16 GB) storage capacity, suitable for various applications.
2. Interface: Supports ONFI (Open NAND Flash Interface) standards, enabling compatibility with various host devices.
3. Architecture: Utilizes a 2-bit per cell (MLC) architecture for enhanced data storage density.
4. Data Transfer Rates: Offers high-speed read/write operations, typically up to 400 MB/s.
5. Endurance: Designed for high endurance, supporting a significant number of program/erase cycles (around 3,000 to 10,000 cycles).
6. Form Factor: Available in a compact BGA (Ball Grid Array) package, facilitating space-saving designs in electronic products.
7. Power Management: Features low power consumption modes, making it suitable for battery-operated devices.
8. Error Correction: Supports advanced error correction features to ensure data integrity.
This chip is ideal for applications such as SSDs, mobile devices, and embedded systems requiring reliable and high-performance storage solutions.
Package
The MT29F128G08CFABBWP-12IT:B is a NAND flash memory chip packaged in a TSOP (Thin Small Outline Package) format, specifically designed for compact applications. The package type allows for efficient space utilization and ease of integration into various electronic devices.
Pinout
The MT29F128G08CFABBWP-12IT:B is a NAND flash memory device with a pin count of 48. It utilizes a TSOP (Thin Small Outline Package) form factor. The device is designed for high-density storage applications, offering a storage capacity of 128 Gb (16 GB) with a page size of 8 KB.
Key functions of the pins include:
- Commands: For various operations such as read, write, and erase.
- Data I/O: Pins dedicated to data input and output.
- Control Signals: Including CE (Chip Enable), RE (Read Enable), WE (Write Enable), and WP (Write Protect).
- Addressing: Used to select memory locations during read/write operations.
- Power: Vcc for power supply and Vss for ground.
This device supports advanced features like ONFI (Open NAND Flash Interface) and has a 12 ns access time, making it suitable for high-performance applications.
Key functions of the pins include:
- Commands: For various operations such as read, write, and erase.
- Data I/O: Pins dedicated to data input and output.
- Control Signals: Including CE (Chip Enable), RE (Read Enable), WE (Write Enable), and WP (Write Protect).
- Addressing: Used to select memory locations during read/write operations.
- Power: Vcc for power supply and Vss for ground.
This device supports advanced features like ONFI (Open NAND Flash Interface) and has a 12 ns access time, making it suitable for high-performance applications.
Manufacturer
The MT29F128G08CFABBWP-12IT:B is manufactured by Micron Technology, Inc. Micron is a leading global provider of innovative memory and storage solutions, specializing in DRAM, NAND flash memory, and other semiconductor products. Founded in 1978 and headquartered in Boise, Idaho, the company serves a variety of markets, including computing, networking, mobile, automotive, and industrial applications. Micron is known for its commitment to advancing memory technology and providing high-performance solutions to meet the evolving needs of its customers.
Application
The MT29F128G08CFABBWP-12IT:B is a 128Gb NAND flash memory chip used in various applications, including mobile devices, consumer electronics, and embedded systems. It is suitable for data storage in smartphones, tablets, SSDs, and IoT devices due to its high density, performance, and reliability. Its features support applications requiring fast read/write speeds and efficient power consumption.
Equivalent
The MT29F128G08CFABBWP-12IT:B is a NAND Flash memory chip. Equivalent products may include similar density NAND Flash from manufacturers like Samsung (K9GAG08U0M), SK Hynix (H26M64103G), and Toshiba (TH58TEG8D2FBAIL). Ensure compatibility in parameters such as interface type, package, and voltage levels when considering alternatives. Always consult the datasheets for exact specifications.
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DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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