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MT29C4G48MAZBBAKB-48 IT
Multichip Packages NAND MCP 6G J4Q2
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- Mfr。パート #MT29C4G48MAZBBAKB-48 IT
- パッケージ
- データシート
- 在庫中4700
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
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仕様
| Packaging | Tray |
| Standard Pack Qty | 1008 |
概要
Description
The MT29C4G48MAZBBAKB-48 IT is a NAND flash memory device produced by Micron Technology. It is designed for high-performance data storage applications, often used in mobile devices, tablets, and SSDs. The "MT" prefix indicates it is a Micron product, while "29C4G48" denotes its specific model and capacity, which is 4Gb (Gigabits). The "MAZBBAKB" suffix typically refers to features and packaging specifications, including temperature ranges and performance characteristics.
The "48 IT" refers to the interface type and the intended application environment, suggesting it's optimized for industrial temperature ranges. This NAND flash memory offers high read and write speeds, endurance, and reliability, making it suitable for applications requiring robust data retention and fast access. Overall, the MT29C4G48MAZBBAKB-48 IT is an efficient solution for embedded systems and consumer electronics that demand high-performance memory solutions.
The "48 IT" refers to the interface type and the intended application environment, suggesting it's optimized for industrial temperature ranges. This NAND flash memory offers high read and write speeds, endurance, and reliability, making it suitable for applications requiring robust data retention and fast access. Overall, the MT29C4G48MAZBBAKB-48 IT is an efficient solution for embedded systems and consumer electronics that demand high-performance memory solutions.
Features
The MT29C4G48MAZBBAKB-48 is a 4GB DDR3 SDRAM memory chip from Micron Technology, designed for high-performance applications. Key features include:
1. Density: 4Gb (Gigabits) per die, allowing for higher capacity in memory configurations.
2. Data Rate: Operates at a data rate of 1600 MT/s (megatransfers per second).
3. Bus Width: 64-bit wide, making it suitable for various computing needs.
4. Package: Typically comes in a compact FBGA (Fine Ball Grid Array) package for efficient space utilization.
5. Voltage: Operates at a low voltage of 1.5V, contributing to power efficiency.
6. Latency: Offers low latency options, improving performance in memory-intensive applications.
7. Thermal Performance: Designed for improved thermal management, essential for high-performance environments.
This memory chip is ideal for use in servers, laptops, and other computing devices requiring reliable and efficient memory solutions.
1. Density: 4Gb (Gigabits) per die, allowing for higher capacity in memory configurations.
2. Data Rate: Operates at a data rate of 1600 MT/s (megatransfers per second).
3. Bus Width: 64-bit wide, making it suitable for various computing needs.
4. Package: Typically comes in a compact FBGA (Fine Ball Grid Array) package for efficient space utilization.
5. Voltage: Operates at a low voltage of 1.5V, contributing to power efficiency.
6. Latency: Offers low latency options, improving performance in memory-intensive applications.
7. Thermal Performance: Designed for improved thermal management, essential for high-performance environments.
This memory chip is ideal for use in servers, laptops, and other computing devices requiring reliable and efficient memory solutions.
Package
The MT29C4G48MAZBBAKB-48 IT is a DRAM memory chip packaged in a BGA (Ball Grid Array) format. This type of package allows for a compact design, efficient thermal performance, and high pin density, suitable for various electronic applications.
Pinout
The MT29C4G48MAZBBAKB-48 IT is a NAND Flash memory device with a pin count of 48 pins. It operates as a multi-level cell (MLC) memory, providing a storage capacity of 4Gb (gigabits).
### Pin Functions:
1. Data Pins (DQ0-DQ7): 8 data input/output for reading/writing data.
2. Control Pins:
- WE: Write Enable, initiates write operations.
- RE: Read Enable, enables read operations.
- CE: Chip Enable, activates the device.
- ALE: Address Latch Enable, latches address inputs.
- CLE: Command Latch Enable, latches command inputs.
3. Address Pins (A0-A20): 21 address input pins for accessing memory locations.
4. VCC/VSS: Power supply and ground pins.
5. R/B: Ready/Busy pin indicates the status of the device.
6. WP: Write Protect, prevents write operations when enabled.
This device is typically used in embedded systems and consumer electronics for data storage applications.
### Pin Functions:
1. Data Pins (DQ0-DQ7): 8 data input/output for reading/writing data.
2. Control Pins:
- WE: Write Enable, initiates write operations.
- RE: Read Enable, enables read operations.
- CE: Chip Enable, activates the device.
- ALE: Address Latch Enable, latches address inputs.
- CLE: Command Latch Enable, latches command inputs.
3. Address Pins (A0-A20): 21 address input pins for accessing memory locations.
4. VCC/VSS: Power supply and ground pins.
5. R/B: Ready/Busy pin indicates the status of the device.
6. WP: Write Protect, prevents write operations when enabled.
This device is typically used in embedded systems and consumer electronics for data storage applications.
Manufacturer
The manufacturer of the MT29C4G48MAZBBAKB-48 IT is Micron Technology, Inc. Micron is a leading American producer of memory and storage solutions, specializing in semiconductor products, including DRAM, NAND flash memory, and other memory technologies. Founded in 1978 and headquartered in Boise, Idaho, Micron serves various markets such as computing, mobile, automotive, and consumer electronics. The company's products are critical for a wide range of applications, from smartphones to data centers, enabling high-performance computing and efficient data storage solutions. Micron is also recognized for its commitment to innovation and sustainability in the semiconductor industry.
Application
The MT29C4G48MAZBBAKB-48 IT is a 4Gb DDR3 SDRAM memory chip commonly used in applications such as smartphones, tablets, and other portable devices. Its features make it suitable for high-performance computing, automotive electronics, and embedded systems requiring efficient data processing and storage. Additionally, it is used in networking equipment and industrial applications where reliable memory performance is critical.
Equivalent
The MT29C4G48MAZBBAKB-48 IT chip is a 4Gb DDR3 SDRAM with specific features. Equivalent products include:
1. Hynix H5TQ4G63AFR-12C
2. Samsung K4B4G1646E-BCK0
3. Micron MT41K256M16HA-125
Always verify compatibility with your application requirements before substituting any components.
1. Hynix H5TQ4G63AFR-12C
2. Samsung K4B4G1646E-BCK0
3. Micron MT41K256M16HA-125
Always verify compatibility with your application requirements before substituting any components.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
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