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MT29C1G12MAAJVAMD-5 IT
VFBGA-130 Oscillators RoHS
- メーカー
- Mfr。パート #MT29C1G12MAAJVAMD-5 IT
- パッケージ
- データシート
- 在庫中21302
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
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仕様
| Packaging | VFBGA-130 |
概要
Description
The MT29C1G12MAAJVAMD-5 IT is a 1Gb NAND Flash memory chip developed by Micron Technology. It employs a multi-level cell (MLC) architecture, allowing it to store multiple bits per cell, which enhances storage density. This specific part is designed for high-performance applications, offering fast read and write speeds, and is suitable for various consumer and industrial applications, including smartphones, tablets, and embedded systems.
Key features include a 1.8V power supply, a synchronous interface for improved data transfer rates, and support for various memory management techniques such as wear leveling and error correction. The "IT" designation indicates that it is optimized for industrial temperature ranges, making it reliable in harsh environments.
Overall, the MT29C1G12MAAJVAMD-5 IT is a versatile and robust solution for storage needs in modern electronic devices, balancing performance, efficiency, and durability.
Key features include a 1.8V power supply, a synchronous interface for improved data transfer rates, and support for various memory management techniques such as wear leveling and error correction. The "IT" designation indicates that it is optimized for industrial temperature ranges, making it reliable in harsh environments.
Overall, the MT29C1G12MAAJVAMD-5 IT is a versatile and robust solution for storage needs in modern electronic devices, balancing performance, efficiency, and durability.
Features
The MT29C1G12MAAJVAMD-5 is a 1-Gbit NAND Flash memory device from Micron Technology. Key features include:
1. Density: 1 Gbit (128 MB) capacity, suitable for a variety of applications requiring moderate storage.
2. Interface: Supports the ONFI (Open NAND Flash Interface) standard, enabling compatibility with various controllers.
3. Page Size: Typically features a page size of 2 KB, allowing efficient read and write operations.
4. Block Structure: Organized into blocks, commonly 128 KB, which aids in efficient memory management and wear leveling.
5. Operating Voltage: Operates typically at 3.3V, making it compatible with standard logic levels in many electronic devices.
6. Endurance: Designed for high endurance with a program/erase cycle of approximately 10,000 cycles.
7. Data Retention: Offers reliable data retention for up to 10 years under specified conditions.
This device is suitable for applications in consumer electronics, industrial systems, and automotive uses, where reliable storage is essential.
1. Density: 1 Gbit (128 MB) capacity, suitable for a variety of applications requiring moderate storage.
2. Interface: Supports the ONFI (Open NAND Flash Interface) standard, enabling compatibility with various controllers.
3. Page Size: Typically features a page size of 2 KB, allowing efficient read and write operations.
4. Block Structure: Organized into blocks, commonly 128 KB, which aids in efficient memory management and wear leveling.
5. Operating Voltage: Operates typically at 3.3V, making it compatible with standard logic levels in many electronic devices.
6. Endurance: Designed for high endurance with a program/erase cycle of approximately 10,000 cycles.
7. Data Retention: Offers reliable data retention for up to 10 years under specified conditions.
This device is suitable for applications in consumer electronics, industrial systems, and automotive uses, where reliable storage is essential.
Package
The MT29C1G12MAAJVAMD-5 IT is a NAND Flash memory device packaged in a 48-ball VFBGA (very fine ball grid array) package type. This packaging provides a compact footprint and is suitable for mobile and embedded applications.
Pinout
The MT29C1G12MAAJVAMD-5 IT is a 1 Gb (Gigabit) NAND Flash memory device from Micron Technology. It features a total of 48 pins, which are used for various functions including power supply, ground connections, control signals, data input/output, and chip select.
Key functions of the pins include:
- Command and Address Inputs: For issuing commands and addressing memory locations.
- Data I/O: For inputting and outputting data, typically using multiple lines to increase throughput.
- Chip Enable (CE): To activate the memory chip.
- Write Enable (WE) and Read Enable (RE): To control write and read operations.
- Ground (GND) and Power Supply (VCC): For providing power to the device.
This device operates with a supply voltage typically around 2.7V to 3.6V and is intended for applications requiring non-volatile storage.
Key functions of the pins include:
- Command and Address Inputs: For issuing commands and addressing memory locations.
- Data I/O: For inputting and outputting data, typically using multiple lines to increase throughput.
- Chip Enable (CE): To activate the memory chip.
- Write Enable (WE) and Read Enable (RE): To control write and read operations.
- Ground (GND) and Power Supply (VCC): For providing power to the device.
This device operates with a supply voltage typically around 2.7V to 3.6V and is intended for applications requiring non-volatile storage.
Manufacturer
The manufacturer of the MT29C1G12MAAJVAMD-5 IT is Micron Technology, Inc. Micron is a leading American semiconductor company specializing in memory and storage solutions, including DRAM, NAND flash memory, and solid-state drives (SSDs). Founded in 1978 and headquartered in Boise, Idaho, Micron is known for its innovation in memory technology and plays a significant role in the global electronics market. The company serves various sectors, including computing, mobile, automotive, and industrial applications, providing essential components for numerous electronic devices.
Application
The MT29C1G12MAAJVAMD-5 IT is a 1 Gb NAND Flash memory chip used in various applications, including mobile devices, consumer electronics, automotive systems, and industrial automation. Its features support data storage for smartphones, tablets, wearables, and embedded systems, providing high performance and reliability in data-intensive environments.
Equivalent
The MT29C1G12MAAJVAMD-5 IT chip, a 1Gb NAND Flash memory, can have equivalent products from various manufacturers. Some equivalents include:
- Micron MT29F1G01ABAFD
- Samsung K9GAG08U0M
- Hynix H26M31001G3
- Toshiba TH58NVG1S3H
Always verify specifications and compatibility for your specific application.
- Micron MT29F1G01ABAFD
- Samsung K9GAG08U0M
- Hynix H26M31001G3
- Toshiba TH58NVG1S3H
Always verify specifications and compatibility for your specific application.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
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2. クレジット・デビットカード
3. ワイヤー 転送
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