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MT28EW128ABA1LPC-0SIT
IC FLASH 128MBIT PARALLEL 64LBGA
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- Mfr。パート #MT28EW128ABA1LPC-0SIT
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仕様
| Part Status | Active |
| Base Product Number | MT28EW128 |
| DigiKey Programmable | Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 128Mbit |
| Memory Organization | 16M x 8, 8M x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 60ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package | 64-LBGA |
| Supplier Device Package | 64-LBGA (11x13) |
| Packaging | Tray |
| Access Time | 95 ns |
概要
Description
The MT28EW128ABA1LPC-0SIT is a NAND flash memory device manufactured by Micron Technology. This component features a storage capacity of 128 gigabits (Gb) and is designed for embedded applications, commonly used in mobile devices, consumer electronics, and automotive systems.
Key specifications include a 1.8V operation voltage, which enhances power efficiency, and a variety of interface options that support various communication protocols. The architecture of this NAND flash allows for high-speed data transfer and efficient read/write cycles, making it suitable for applications requiring fast data access and reliability.
Additionally, the device employs advanced error correction and wear-leveling technologies to enhance data integrity and longevity. It is typically packaged in a small form factor, ideal for space-constrained environments. The MT28EW128ABA1LPC-0SIT is part of Micron's broader portfolio of memory solutions, catering to the growing demand for high-performance storage in modern electronic devices.
Key specifications include a 1.8V operation voltage, which enhances power efficiency, and a variety of interface options that support various communication protocols. The architecture of this NAND flash allows for high-speed data transfer and efficient read/write cycles, making it suitable for applications requiring fast data access and reliability.
Additionally, the device employs advanced error correction and wear-leveling technologies to enhance data integrity and longevity. It is typically packaged in a small form factor, ideal for space-constrained environments. The MT28EW128ABA1LPC-0SIT is part of Micron's broader portfolio of memory solutions, catering to the growing demand for high-performance storage in modern electronic devices.
Features
The MT28EW128ABA1LPC-0SIT is a NAND flash memory device from Micron, specifically designed for storage applications. Key features include:
1. Density: 128 Mb (16 MB) capacity.
2. Interface: Supports a parallel interface, enabling easy integration with various microcontrollers and processors.
3. Read/Write Operations: Offers asynchronous read access and supports multiple write modes, enhancing flexibility in data handling.
4. Endurance: Designed for high endurance, making it suitable for applications requiring frequent write cycles.
5. Data Retention: Ensures reliable data retention over extended periods, suitable for long-term storage.
6. Low Voltage Operation: Typically operates at low voltage levels, contributing to energy efficiency.
7. Temperature Range: Designed to function within a wide temperature range, which expands its usability in various environments.
Overall, this NAND flash memory is ideal for embedded systems, consumer electronics, and other applications where reliable storage is essential.
1. Density: 128 Mb (16 MB) capacity.
2. Interface: Supports a parallel interface, enabling easy integration with various microcontrollers and processors.
3. Read/Write Operations: Offers asynchronous read access and supports multiple write modes, enhancing flexibility in data handling.
4. Endurance: Designed for high endurance, making it suitable for applications requiring frequent write cycles.
5. Data Retention: Ensures reliable data retention over extended periods, suitable for long-term storage.
6. Low Voltage Operation: Typically operates at low voltage levels, contributing to energy efficiency.
7. Temperature Range: Designed to function within a wide temperature range, which expands its usability in various environments.
Overall, this NAND flash memory is ideal for embedded systems, consumer electronics, and other applications where reliable storage is essential.
Package
The MT28EW128ABA1LPC-0SIT is packaged in a 48-ball VFBGA (Very Thin Ball Grid Array) format. This compact package type is designed for space-efficient applications, providing good thermal performance and reliability.
Pinout
The MT28EW128ABA1LPC-0SIT is a NAND Flash memory device with a pin count of 48. This device is designed for high-density storage applications and is part of the Micron Technology's NAND Flash product line.
The primary functions of the pins include:
- Data Pins (DQ0-DQ7): These are used for data input and output operations.
- Command Pins (ALE, CLE): Address and command latch enable pins for interfacing with the memory.
- Control Pins (WE, RE, CE): Write enable, read enable, and chip enable pins for controlling access to the memory.
- Status Pins (R/B): Ready/busy pin indicating the operational status of the memory.
- Power and Ground Pins (Vcc, Vss): Provide necessary voltage and ground connections.
This configuration supports various operations, including read, write, and erase functionalities, making it suitable for applications requiring non-volatile storage.
The primary functions of the pins include:
- Data Pins (DQ0-DQ7): These are used for data input and output operations.
- Command Pins (ALE, CLE): Address and command latch enable pins for interfacing with the memory.
- Control Pins (WE, RE, CE): Write enable, read enable, and chip enable pins for controlling access to the memory.
- Status Pins (R/B): Ready/busy pin indicating the operational status of the memory.
- Power and Ground Pins (Vcc, Vss): Provide necessary voltage and ground connections.
This configuration supports various operations, including read, write, and erase functionalities, making it suitable for applications requiring non-volatile storage.
Manufacturer
The MT28EW128ABA1LPC-0SIT is manufactured by Micron Technology, Inc. Micron is an American company that specializes in semiconductor manufacturing, particularly memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron produces a range of products including DRAM, NAND flash memory, and solid-state drives (SSDs) used in various applications from personal computing to enterprise storage and mobile devices. The company is a key player in the global memory market and is known for its innovation in memory technology.
Application
The MT28EW128ABA1LPC-0SIT is a NAND flash memory device primarily used in mobile and consumer electronics for data storage. It is suited for applications such as smartphones, tablets, digital cameras, and embedded systems. Its features support high-density storage, low power consumption, and fast data access, making it ideal for applications requiring reliable and efficient memory solutions.
Equivalent
The MT28EW128ABA1LPC-0SIT chip is a NAND flash memory device. Equivalent products include:
1. Micron MT29F2G01ABAFD
2. Samsung K9GAG08U0M
3. Hynix H27UCG8T2BTR
4. Toshiba TC58NVG3S3H
Always verify compatibility with specific application requirements, such as pin configuration, voltage, and speed.
1. Micron MT29F2G01ABAFD
2. Samsung K9GAG08U0M
3. Hynix H27UCG8T2BTR
4. Toshiba TC58NVG3S3H
Always verify compatibility with specific application requirements, such as pin configuration, voltage, and speed.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
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