画像は参照用のみです。
MRF1550NT1
RF MOSFET LDMOS 12.5V TO272-6
- メーカー
- Mfr。パート #MRF1550NT1
- パッケージ
- データシート MRF1550NT1 DataSheet
- 在庫中9075
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Part Status | Obsolete |
| Technology | LDMOS |
| Frequency | 175MHz |
| Gain | 14.5dB |
| Voltage - Test | 12.5 V |
| Current Rating (Amps) | 12A |
| Current - Test | 500 mA |
| Power - Output | 50W |
| Voltage - Rated | 40 V |
| Mounting Type | Chassis Mount |
| Package / Case | TO-272AA |
| Supplier Device Package | TO-272-6 |
| Base Product Number | MRF15 |
概要
Description
The MRF1550NT1 is a high-performance RF power transistor designed for use in various wireless communication applications. Manufactured by NXP Semiconductors, it is specifically optimized for high-frequency operation, making it suitable for 1.8 GHz to 2.2 GHz applications, including CDMA, WCDMA, and LTE systems.
Key features of the MRF1550NT1 include a compact size, high efficiency, and robust performance, with a typical output power of around 50 watts in 50-ohm applications. The transistor is housed in an air-cavity ceramic package, which enhances thermal management and reliability.
This device operates in Class AB mode, providing a good balance between linearity and efficiency, which is critical for modern communication systems that require high power with minimal distortion. Additionally, the MRF1550NT1 is designed to facilitate easy integration into RF amplifier designs, making it a popular choice among engineers in the telecommunications field.
Overall, the MRF1550NT1 stands out for its versatility and performance in high-frequency RF applications.
Key features of the MRF1550NT1 include a compact size, high efficiency, and robust performance, with a typical output power of around 50 watts in 50-ohm applications. The transistor is housed in an air-cavity ceramic package, which enhances thermal management and reliability.
This device operates in Class AB mode, providing a good balance between linearity and efficiency, which is critical for modern communication systems that require high power with minimal distortion. Additionally, the MRF1550NT1 is designed to facilitate easy integration into RF amplifier designs, making it a popular choice among engineers in the telecommunications field.
Overall, the MRF1550NT1 stands out for its versatility and performance in high-frequency RF applications.
Features
The MRF1550NT1 is a high-performance RF power transistor designed for use in various applications, including commercial and military communications. Key features include:
1. Frequency Range: Operates effectively from DC to 1 GHz.
2. Power Output: Provides a typical output power of 50W, suitable for high-demand applications.
3. Gain: Offers high power gain, typically around 15 dB, enhancing system efficiency.
4. Efficiency: Designed for high efficiency, which reduces thermal load and power consumption.
5. Package: Comes in a metal can package (TO-220), enabling better heat dissipation.
6. Biasing: Designed for Class AB operation, suitable for linear amplifiers.
7. Applications: Ideal for use in RF power amplifiers in cellular, paging, and other communication systems.
8. Robustness: Features high reliability and ruggedness for demanding environments.
These features make the MRF1550NT1 a versatile choice for RF amplification needs.
1. Frequency Range: Operates effectively from DC to 1 GHz.
2. Power Output: Provides a typical output power of 50W, suitable for high-demand applications.
3. Gain: Offers high power gain, typically around 15 dB, enhancing system efficiency.
4. Efficiency: Designed for high efficiency, which reduces thermal load and power consumption.
5. Package: Comes in a metal can package (TO-220), enabling better heat dissipation.
6. Biasing: Designed for Class AB operation, suitable for linear amplifiers.
7. Applications: Ideal for use in RF power amplifiers in cellular, paging, and other communication systems.
8. Robustness: Features high reliability and ruggedness for demanding environments.
These features make the MRF1550NT1 a versatile choice for RF amplification needs.
Package
The MRF1550NT1 is packaged in a surface-mount configuration known as the "NT" package type, specifically a 4-lead plastic package. This type is designed for efficient thermal performance and compact design in RF applications.
Pinout
The MRF1550NT1 is a high-power RF transistor designed for use in commercial and industrial radio frequency applications. It features a total of 4 pins.
Pin Functions:
1. Pin 1 (Base) - Input for the transistor; it controls the current flowing between the collector and emitter.
2. Pin 2 (Emitter) - Connected to ground or the negative side of the power supply; it allows current to exit the transistor.
3. Pin 3 (Collector) - The output pin where the amplified RF signal is taken; it connects to the RF load.
4. Pin 4 (Gate) - Often used in applications requiring additional control, depending on the specific circuit configuration.
The MRF1550NT1 is typically used in applications such as power amplifiers in the UHF frequency range, providing high efficiency and linearity.
Pin Functions:
1. Pin 1 (Base) - Input for the transistor; it controls the current flowing between the collector and emitter.
2. Pin 2 (Emitter) - Connected to ground or the negative side of the power supply; it allows current to exit the transistor.
3. Pin 3 (Collector) - The output pin where the amplified RF signal is taken; it connects to the RF load.
4. Pin 4 (Gate) - Often used in applications requiring additional control, depending on the specific circuit configuration.
The MRF1550NT1 is typically used in applications such as power amplifiers in the UHF frequency range, providing high efficiency and linearity.
Manufacturer
The MRF1550NT1 is manufactured by NXP Semiconductors, a global semiconductor company founded in 2006 as a spin-off from Philips. NXP specializes in designing and producing a wide range of semiconductor products, including analog and digital integrated circuits, microcontrollers, and RF (radio frequency) power transistors. The MRF1550NT1 is a high-performance RF power transistor, commonly used in applications such as wireless infrastructure, industrial, and scientific equipment. NXP operates in various sectors, including automotive, mobile, and IoT (Internet of Things), focusing on enabling secure connections and infrastructure for a smarter world.
Application
The MRF1550NT1 is a high-power N-channel MOSFET designed for RF amplification applications. Its primary application areas include cellular base stations, microwave communication systems, and industrial RF heating. It is also used in power amplifiers for broadcast transmitters and in various RF applications requiring high efficiency and linearity.
Equivalent
The MRF1550NT1 is a high-power RF transistor designed for use in amplifiers operating in the UHF range. Equivalent products include the MRF1550, MRF150, and MRF1500. For specific applications, you might also consider transistors like the BLF242, BLF278, or the MRF211. Always check the datasheets for detailed specifications and compatibility for your particular use case.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
類似
-
MX25L3233FM1I-08Q
Macronix
-
MX25V1635FZNI
Macronix
-
MX29F400CBTI-70G
Macronix
-
MX25V5126FM1I
Macronix
-
MX25V2033FM1I
Macronix
-
MX25R3235FZNIL0
Macronix
-
MX25L25673GMI-08G
Macronix
-
MX25L25673GMI-10G
Macronix
-
MX25U51279GXDR00
Macronix
-
MX25U25643GZNI00
Macronix
-
MX25L2006EM1I-12G
Macronix
-
MX25L12833FZ2I-10..
Macronix