画像は参照用のみです。
MMUN2232LT1G
TRANS PREBIAS NPN 50V SOT23-3
- メーカー
- Mfr。パート #MMUN2232LT1G
- パッケージ
- データシート MMUN2232LT1G DataSheet
- 在庫中9418
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Part Status | Active |
| Transistor Type | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Resistors Included | R1 and R2 |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| Power - Max | 246 mW |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Base Product Number | MMUN2232 |
概要
Description
MMUN2232LT1G is a course focused on the principles and practices of Model United Nations (MUN). It provides students with an understanding of international relations, diplomacy, and the workings of the United Nations. Participants engage in simulations where they represent different countries, debate global issues, and develop skills in public speaking, negotiation, and critical thinking. The course emphasizes research, preparation, and teamwork, equipping students with the tools to navigate complex political discussions. Through practical exercises and model conferences, students gain insight into the challenges faced by the international community and the importance of multilateral cooperation. Overall, MMUN2232LT1G aims to foster a deeper appreciation for global governance and the role of youth in shaping future policies.
Features
The MMUN2232LT1G is a high-performance RF switch designed for applications in telecommunications and RF systems. Key features include:
1. Frequency Range: Operates from DC to 2.5 GHz, making it suitable for a wide range of RF and microwave applications.
2. Low Insertion Loss: Offers low insertion loss, which enhances signal integrity and improves overall system performance.
3. High Isolation: Provides high isolation between ports, minimizing signal cross-talk and maximizing signal clarity.
4. Compact Size: Features a small form factor, ideal for space-constrained applications.
5. Surface Mount Technology (SMT): Designed for easy integration into printed circuit boards (PCBs).
6. Power Handling: Supports high power levels, ensuring reliability in demanding environments.
7. Temperature Stability: Maintains performance over a wide temperature range, ensuring consistent operation in various conditions.
These features make the MMUN2232LT1G a reliable choice for RF switching applications in mobile devices, base stations, and other communication systems.
1. Frequency Range: Operates from DC to 2.5 GHz, making it suitable for a wide range of RF and microwave applications.
2. Low Insertion Loss: Offers low insertion loss, which enhances signal integrity and improves overall system performance.
3. High Isolation: Provides high isolation between ports, minimizing signal cross-talk and maximizing signal clarity.
4. Compact Size: Features a small form factor, ideal for space-constrained applications.
5. Surface Mount Technology (SMT): Designed for easy integration into printed circuit boards (PCBs).
6. Power Handling: Supports high power levels, ensuring reliability in demanding environments.
7. Temperature Stability: Maintains performance over a wide temperature range, ensuring consistent operation in various conditions.
These features make the MMUN2232LT1G a reliable choice for RF switching applications in mobile devices, base stations, and other communication systems.
Package
The MMUN2232LT1G is packaged in a SOT-223 (Surface-Mount) configuration, which is designed for efficient thermal performance and space-saving applications in electronic circuits.
Pinout
The MMUN2232LT1G is a N-channel MOSFET transistor in a SOT-23 package, featuring a total of three pins.
Pin Configuration:
1. Gate (G): This pin controls the switching of the transistor. Applying a voltage to this pin allows current to flow from the drain to the source.
2. Drain (D): This pin is where the main current flows out of the MOSFET when it is turned on.
3. Source (S): This pin is connected to the ground in most applications and serves as the return path for current flowing through the transistor.
Function: The MMUN2232LT1G is typically used in low-voltage, low-power switching applications, such as driving loads in battery-powered devices, providing efficient control of electrical signals. Its compact size makes it suitable for space-constrained designs.
Pin Configuration:
1. Gate (G): This pin controls the switching of the transistor. Applying a voltage to this pin allows current to flow from the drain to the source.
2. Drain (D): This pin is where the main current flows out of the MOSFET when it is turned on.
3. Source (S): This pin is connected to the ground in most applications and serves as the return path for current flowing through the transistor.
Function: The MMUN2232LT1G is typically used in low-voltage, low-power switching applications, such as driving loads in battery-powered devices, providing efficient control of electrical signals. Its compact size makes it suitable for space-constrained designs.
Manufacturer
The MMUN2232LT1G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in providing a diverse range of products, including analog, digital, and mixed-signal semiconductor solutions. Their offerings cater to various industries, such as automotive, industrial, communications, and consumer electronics. The MMUN2232LT1G is a low-power N-channel MOSFET designed for applications requiring efficient power management. The company's focus is on innovation and sustainability, contributing to energy-efficient solutions in a wide array of electronic devices.
Application
The MMUN2232LT1G is a low-dropout (LDO) voltage regulator primarily used in power management applications. It is suitable for portable devices, battery-powered equipment, consumer electronics, and telecommunications. Its compact size and efficiency make it ideal for powering microcontrollers, sensors, and RF modules in IoT devices, as well as other applications requiring stable voltage regulation.
Equivalent
The MMUN2232LT1G is a N-channel MOSFET. Equivalent products include the BSS138, 2N7000, and BS170. For specific applications, ensure to check the voltage and current ratings, as well as package types to confirm compatibility.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
類似
-
MX25L3233FM1I-08Q
Macronix
-
MX25V1635FZNI
Macronix
-
MX25V1635FZNQ03
Macronix
-
MX29F400CBTI-70G
Macronix
-
MX25V4035FZUI
Macronix
-
MX25V2033FM1I
Macronix
-
MX25L8035EM2I-10G
Macronix
-
MX25L25673GMI-08G
Macronix
-
MX29GL512FHXFI-11..
Macronix
-
MX25L12833FM2I-10..
Macronix
-
MX25L12833FZ2I-10..
Macronix
-
MX25U25645GXDI00
Macronix