MMUN2232LT1G

画像は参照用のみです。

MMUN2232LT1G

TRANS PREBIAS NPN 50V SOT23-3

100% オリジナル &新しい

出荷の準備ができている24時間

365日の保証

RFQおよびもっと割引を得る

仕様

Part Status Active
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistors Included R1 and R2
Resistor - Base (R1) 4.7 kOhms
Resistor - Emitter Base (R2) 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 246 mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Base Product Number MMUN2232

概要

Description

MMUN2232LT1G is a course focused on the principles and practices of Model United Nations (MUN). It provides students with an understanding of international relations, diplomacy, and the workings of the United Nations. Participants engage in simulations where they represent different countries, debate global issues, and develop skills in public speaking, negotiation, and critical thinking. The course emphasizes research, preparation, and teamwork, equipping students with the tools to navigate complex political discussions. Through practical exercises and model conferences, students gain insight into the challenges faced by the international community and the importance of multilateral cooperation. Overall, MMUN2232LT1G aims to foster a deeper appreciation for global governance and the role of youth in shaping future policies.

Features

The MMUN2232LT1G is a high-performance RF switch designed for applications in telecommunications and RF systems. Key features include:
1. Frequency Range: Operates from DC to 2.5 GHz, making it suitable for a wide range of RF and microwave applications.
2. Low Insertion Loss: Offers low insertion loss, which enhances signal integrity and improves overall system performance.
3. High Isolation: Provides high isolation between ports, minimizing signal cross-talk and maximizing signal clarity.
4. Compact Size: Features a small form factor, ideal for space-constrained applications.
5. Surface Mount Technology (SMT): Designed for easy integration into printed circuit boards (PCBs).
6. Power Handling: Supports high power levels, ensuring reliability in demanding environments.
7. Temperature Stability: Maintains performance over a wide temperature range, ensuring consistent operation in various conditions.
These features make the MMUN2232LT1G a reliable choice for RF switching applications in mobile devices, base stations, and other communication systems.

Package

The MMUN2232LT1G is packaged in a SOT-223 (Surface-Mount) configuration, which is designed for efficient thermal performance and space-saving applications in electronic circuits.

Pinout

The MMUN2232LT1G is a N-channel MOSFET transistor in a SOT-23 package, featuring a total of three pins.
Pin Configuration:
1. Gate (G): This pin controls the switching of the transistor. Applying a voltage to this pin allows current to flow from the drain to the source.
2. Drain (D): This pin is where the main current flows out of the MOSFET when it is turned on.
3. Source (S): This pin is connected to the ground in most applications and serves as the return path for current flowing through the transistor.
Function: The MMUN2232LT1G is typically used in low-voltage, low-power switching applications, such as driving loads in battery-powered devices, providing efficient control of electrical signals. Its compact size makes it suitable for space-constrained designs.

Manufacturer

The MMUN2232LT1G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in providing a diverse range of products, including analog, digital, and mixed-signal semiconductor solutions. Their offerings cater to various industries, such as automotive, industrial, communications, and consumer electronics. The MMUN2232LT1G is a low-power N-channel MOSFET designed for applications requiring efficient power management. The company's focus is on innovation and sustainability, contributing to energy-efficient solutions in a wide array of electronic devices.

Application

The MMUN2232LT1G is a low-dropout (LDO) voltage regulator primarily used in power management applications. It is suitable for portable devices, battery-powered equipment, consumer electronics, and telecommunications. Its compact size and efficiency make it ideal for powering microcontrollers, sensors, and RF modules in IoT devices, as well as other applications requiring stable voltage regulation.

Equivalent

The MMUN2232LT1G is a N-channel MOSFET. Equivalent products include the BSS138, 2N7000, and BS170. For specific applications, ensure to check the voltage and current ratings, as well as package types to confirm compatibility.

出荷

出荷方法私たち

DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。


出荷料参照(DHL/FedEx):

DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。

支払い

Payment Methods

支払い期間は100%前払いです。

現在、下記の支払い方法のみを受け入れています。:

1. ペイパル

2. クレジット・デビットカード

3. ワイヤー 転送