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MMBTA55LT1G
TRANS PNP 60V 0.5A SOT23-3
- メーカー
- Mfr。パート #MMBTA55LT1G
- パッケージ TO-236-3, SC-59, SOT-23-3
- データシート MMBTA55LT1G DataSheet
- 在庫中13996
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
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仕様
| Supplier | onsemi |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| TransistorType | PNP |
| Current-Collector(Ic)(Max) | 500 mA |
| Voltage-CollectorEmitterBreakdown(Max) | 60 V |
| VceSaturation(Max)@IbIc | 250mV @ 10mA, 100mA |
| Current-CollectorCutoff(Max) | 100nA |
| DCCurrentGain(hFE)(Min)@IcVce | 100 @ 100mA, 1V |
| Power-Max | 225 mW |
| Frequency-Transition | 50MHz |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | TO-236-3, SC-59, SOT-23-3 |
概要
Description
The MMBTA55LT1G is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various electronic applications. It features low on-resistance, high-speed switching capabilities, and a maximum drain-source voltage of 55V. This makes it suitable for use in power management applications, such as switching power supplies, motor drivers, and DC-DC converters.
The device is characterized by its fast switching times, which enhance efficiency and reduce energy loss in electronic circuits. Its compact package allows for easy integration into space-constrained designs. The MMBTA55LT1G also offers thermal stability and reliability, making it a popular choice among engineers for designing efficient power solutions.
Suitable for various applications, including consumer electronics and industrial equipment, this MOSFET is widely used in both professional and hobbyist electronics. Key specifications include its gate threshold voltage, maximum continuous drain current, and thermal resistance, which should be considered in circuit design to ensure optimal performance.
The device is characterized by its fast switching times, which enhance efficiency and reduce energy loss in electronic circuits. Its compact package allows for easy integration into space-constrained designs. The MMBTA55LT1G also offers thermal stability and reliability, making it a popular choice among engineers for designing efficient power solutions.
Suitable for various applications, including consumer electronics and industrial equipment, this MOSFET is widely used in both professional and hobbyist electronics. Key specifications include its gate threshold voltage, maximum continuous drain current, and thermal resistance, which should be considered in circuit design to ensure optimal performance.
Features
The MMBTA55LT1G is an N-channel MOSFET designed for low-voltage applications. Key features include:
1. Voltage and Current Ratings: It has a maximum drain-source voltage (V_DS) of 55V and can handle continuous drain currents (I_D) up to 30A.
2. R_DS(on): The on-resistance is low, typically around 0.018 ohms, which minimizes power loss during operation.
3. Gate Threshold Voltage (V_GS(th)): This device has a V_GS(th) range of 1V to 3V, making it suitable for logic-level applications.
4. Package: It is available in a TO-220 package, which aids in efficient thermal dissipation.
5. Fast Switching: The MOSFET exhibits fast switching speeds, making it ideal for high-frequency applications.
6. Low Gate Charge (Q_g): The low gate charge enhances efficiency and reduces drive power requirements.
Overall, the MMBTA55LT1G is ideal for power management, switching applications, and motor control due to its robust performance and efficiency.
1. Voltage and Current Ratings: It has a maximum drain-source voltage (V_DS) of 55V and can handle continuous drain currents (I_D) up to 30A.
2. R_DS(on): The on-resistance is low, typically around 0.018 ohms, which minimizes power loss during operation.
3. Gate Threshold Voltage (V_GS(th)): This device has a V_GS(th) range of 1V to 3V, making it suitable for logic-level applications.
4. Package: It is available in a TO-220 package, which aids in efficient thermal dissipation.
5. Fast Switching: The MOSFET exhibits fast switching speeds, making it ideal for high-frequency applications.
6. Low Gate Charge (Q_g): The low gate charge enhances efficiency and reduces drive power requirements.
Overall, the MMBTA55LT1G is ideal for power management, switching applications, and motor control due to its robust performance and efficiency.
Package
The MMBTA55LT1G is a N-channel MOSFET packaged in a surface-mounted SOT-23 package.
Pinout
The MMBTA55LT1G is a NPN bipolar junction transistor (BJT) housed in a SOT-23 package. It has three pins.
Pin Configuration:
1. Base (B) - The control terminal used to regulate current flow.
2. Collector (C) - The terminal through which the majority of current flows when the transistor is in operation.
3. Emitter (E) - The terminal that emits charge carriers.
Function:
The MMBTA55LT1G is primarily used for general-purpose amplification and switching applications. It features a maximum collector current of 600 mA and a maximum collector-emitter voltage of 45 V, making it suitable for various low-power electronic circuits. Its small size and efficiency make it ideal for compact designs in consumer electronics, automotive, and industrial applications.
Pin Configuration:
1. Base (B) - The control terminal used to regulate current flow.
2. Collector (C) - The terminal through which the majority of current flows when the transistor is in operation.
3. Emitter (E) - The terminal that emits charge carriers.
Function:
The MMBTA55LT1G is primarily used for general-purpose amplification and switching applications. It features a maximum collector current of 600 mA and a maximum collector-emitter voltage of 45 V, making it suitable for various low-power electronic circuits. Its small size and efficiency make it ideal for compact designs in consumer electronics, automotive, and industrial applications.
Manufacturer
The MMBTA55LT1G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor components for various applications, including automotive, industrial, communications, and consumer electronics. The company focuses on energy-efficient solutions and has a broad portfolio that includes analog, logic, and mixed-signal integrated circuits, as well as discrete components like diodes and transistors, such as the MMBTA55LT1G.
Application
The MMBTA55LT1G is a NPN bipolar junction transistor (BJT) used in various applications such as switching and amplification in low-power electronic circuits. Its common uses include audio amplifiers, signal processing, and general-purpose switching applications in consumer electronics, automotive systems, and industrial devices. Its low saturation voltage and high current gain make it suitable for driving loads and interfacing with microcontrollers.
Equivalent
The MMBTA55LT1G is a NPN transistor used for general-purpose applications. Equivalent products include the BC547, 2N3904, and 2N4401. However, check the specific electrical characteristics and package types to ensure compatibility with your application.
出荷
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
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