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MMBTA06LT1G
TRANS NPN 80V 0.5A SOT23-3
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- Mfr。パート #MMBTA06LT1G
- パッケージ SOT23-3
- データシート
- 在庫中5253
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仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| TransistorType | NPN |
| Current-Collector(Ic)(Max) | 500 mA |
| Voltage-CollectorEmitterBreakdown(Max) | 80 V |
| VceSaturation(Max)@IbIc | 250mV @ 10mA, 100mA |
| Current-CollectorCutoff(Max) | 100nA |
| DCCurrentGain(hFE)(Min)@IcVce | 100 @ 100mA, 1V |
| Power-Max | 225 mW |
| Frequency-Transition | 100MHz |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | TO-236-3, SC-59, SOT-23-3 |
概要
Description
The MMBTA06LT1G is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) used in various electronic applications. It features low on-resistance and high-speed switching capabilities, making it suitable for power management in devices like power supplies, motor drivers, and general switching applications.
The device is characterized by its ability to handle significant voltage and current levels, typically in the range of several volts and amperes, which allows it to efficiently control power. Its small package size enables compact circuit designs, enhancing overall system performance and integration.
Key specifications include its drain-source voltage (Vds), gate-source voltage (Vgs), and continuous drain current (Id), which are critical for ensuring the MOSFET operates within safe limits. Additionally, the MMBTA06LT1G is often used in low-voltage applications, contributing to energy efficiency in electronic circuits.
In summary, the MMBTA06LT1G is an essential component in modern electronic design, providing reliable performance for a variety of power management tasks.
The device is characterized by its ability to handle significant voltage and current levels, typically in the range of several volts and amperes, which allows it to efficiently control power. Its small package size enables compact circuit designs, enhancing overall system performance and integration.
Key specifications include its drain-source voltage (Vds), gate-source voltage (Vgs), and continuous drain current (Id), which are critical for ensuring the MOSFET operates within safe limits. Additionally, the MMBTA06LT1G is often used in low-voltage applications, contributing to energy efficiency in electronic circuits.
In summary, the MMBTA06LT1G is an essential component in modern electronic design, providing reliable performance for a variety of power management tasks.
Features
The MMBTA06LT1G is a low-power NPN bipolar junction transistor (BJT) designed for high-frequency applications. Key features include:
1. Voltage Rating: Collector-emitter voltage (Vce) of 60V, making it suitable for various circuits.
2. Current Rating: Continuous collector current (Ic) of up to 0.8A, allowing for effective switching and amplification.
3. Gain: High DC current gain (hFE) ranging from 100 to 800, ensuring efficient signal amplification.
4. Frequency Response: Transition frequency (fT) of approximately 100 MHz, suitable for RF applications.
5. Package Type: Available in the SOT-23 package, which offers a compact footprint for space-constrained designs.
6. Low Noise: Designed for low-noise applications, enhancing performance in audio and RF circuits.
These attributes make the MMBTA06LT1G ideal for consumer electronics, RF amplifiers, and general-purpose switching applications.
1. Voltage Rating: Collector-emitter voltage (Vce) of 60V, making it suitable for various circuits.
2. Current Rating: Continuous collector current (Ic) of up to 0.8A, allowing for effective switching and amplification.
3. Gain: High DC current gain (hFE) ranging from 100 to 800, ensuring efficient signal amplification.
4. Frequency Response: Transition frequency (fT) of approximately 100 MHz, suitable for RF applications.
5. Package Type: Available in the SOT-23 package, which offers a compact footprint for space-constrained designs.
6. Low Noise: Designed for low-noise applications, enhancing performance in audio and RF circuits.
These attributes make the MMBTA06LT1G ideal for consumer electronics, RF amplifiers, and general-purpose switching applications.
Package
The MMBTA06LT1G is packaged in a Surface Mount Device (SMD) format, specifically the SOT-23 package type. This compact package is designed for easy integration into electronic circuits.
Pinout
The MMBTA06LT1G is a NPN bipolar junction transistor (BJT) commonly used for switching and amplification applications. It comes in a TO-92 package, which typically has three pins.
### Pin Count and Functions:
1. Collector (C): This pin is used to collect the current from the transistor and is connected to the load.
2. Base (B): The base pin controls the transistor's operation and determines how much current flows from the collector to the emitter.
3. Emitter (E): This pin allows current to flow out of the transistor to the ground or the circuit's reference point.
In summary, the MMBTA06LT1G has a total of three pins, serving as the collector, base, and emitter for its functioning in electronic circuits.
### Pin Count and Functions:
1. Collector (C): This pin is used to collect the current from the transistor and is connected to the load.
2. Base (B): The base pin controls the transistor's operation and determines how much current flows from the collector to the emitter.
3. Emitter (E): This pin allows current to flow out of the transistor to the ground or the circuit's reference point.
In summary, the MMBTA06LT1G has a total of three pins, serving as the collector, base, and emitter for its functioning in electronic circuits.
Manufacturer
The MMBTA06LT1G is manufactured by ON Semiconductor, a leading global supplier of semiconductor-based solutions. ON Semiconductor specializes in a wide range of products, including power management, analog, and discrete components, serving various industries such as automotive, industrial, and consumer electronics. The company's focus on innovation and energy efficiency aligns with the increasing demand for advanced electronic components in modern applications.
Application
The MMBTA06LT1G is a high-performance NPN transistor commonly used in various applications, including audio amplification, switching circuits, and signal processing in consumer electronics. It is particularly suited for low to medium power applications, such as in power amplifiers and digital circuits, due to its high current gain and fast switching capabilities. Additionally, it can be employed in RF applications and as a small-signal amplifier in telecommunications.
Equivalent
The MMBTA06LT1G is a NPN transistor commonly used for switching and amplification. Equivalent products include the BC547, 2N3904, and 2N2222. However, always verify specifications and ratings to ensure compatibility for your specific application.
出荷
出荷方法私たち
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
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