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MMBT5087LT1G

Name: MMBT5087LT1G
Rating: 4.7 (12 reviews)

TRANS PNP 50V 0.05A SOT23-3

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Mfr。パート #MMBT5087LT1G
パッケージ TO-236-3, SC-59, SOT-23-3
データシート MMBT5087LT1G DataSheet
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仕様

Supplier	onsemi,Rochester Electronics, LLC
Package	Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus	Active
TransistorType	PNP
Current-Collector(Ic)(Max)	50 mA
Voltage-CollectorEmitterBreakdown(Max)	50 V
VceSaturation(Max)@IbIc	300mV @ 1mA, 10mA
Current-CollectorCutoff(Max)	50nA (ICBO)
DCCurrentGain(hFE)(Min)@IcVce	250 @ 100µA, 5V
Power-Max	300 mW
Frequency-Transition	40MHz
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
Package/Case	TO-236-3, SC-59, SOT-23-3

概要

Description

The MMBT5087LT1G is a NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum collector current of 600 mA and a collector-emitter voltage of 45 V, making it suitable for various electronic circuits. The device is housed in a compact SOT-23 package, which is beneficial for space-constrained applications.
Key specifications include a gain (h_FE) of 100 to 800, enabling efficient signal amplification, and a maximum power dissipation of 300 mW. The MMBT5087LT1G is known for its reliable performance, low noise, and fast switching capabilities, making it ideal for use in audio amplifiers, signal processing, and digital circuits. Additionally, it is RoHS compliant, ensuring it meets environmental standards.
Overall, the MMBT5087LT1G is a versatile component widely used in consumer electronics, automotive applications, and industrial devices.

Features

The MMBT5087LT1G is a NPN bipolar junction transistor (BJT) designed for low-power applications. Key features include:
1. Type: NPN transistor, suitable for switching and amplification.
2. Voltage Rating: With a collector-emitter voltage (Vce) of 45V, it can handle moderate voltage applications.
3. Current Rating: Maximum collector current (Ic) of 600mA, suitable for low to medium power levels.
4. Power Dissipation: Capable of dissipating up to 500mW, allowing for reliable operation in various conditions.
5. Gain: High current gain (hFE) typically ranging from 100 to 300, enhancing its amplification capability.
6. Package: Available in a compact SOT-23 package, which is ideal for space-constrained designs.
7. Temperature Range: Operates effectively within a temperature range of -55°C to +150°C, suitable for both commercial and industrial applications.
This transistor is widely used in signal processing, switching applications, and as a driver in low-power circuits.

Package

The MMBT5087LT1G is packaged in a SOT-23 surface mount package.

Pinout

The MMBT5087LT1G is a NPN bipolar junction transistor (BJT) in a SOT-23 package. It features a total of three pins. The pin configuration is as follows:
1. Pin 1 (Base) - This pin is used to control the transistor and is the input for the control signal.
2. Pin 2 (Collector) - This pin is the output of the transistor where the load is connected.
3. Pin 3 (Emitter) - This pin is connected to the ground or the negative supply voltage in typical applications.
The MMBT5087LT1G is commonly used for switching and amplification applications in low-power electronic circuits, capable of handling moderate current levels and providing good performance in small signal applications.

Manufacturer

The MMBT5087LT1G is manufactured by ON Semiconductor. ON Semiconductor is a global semiconductor company that designs and manufactures a wide range of electronic components, including transistors, diodes, and integrated circuits. The company serves various industries such as automotive, industrial, communications, and consumer electronics. ON Semiconductor focuses on providing energy-efficient solutions and is known for its commitment to sustainability and innovation in semiconductor technology.

Application

The MMBT5087LT1G is a general-purpose NPN bipolar junction transistor (BJT) used in various applications, including signal amplification, switching circuits, and audio amplification. Its compact size makes it ideal for use in consumer electronics, telecommunications, and automotive applications. Additionally, it can be utilized in low-power applications such as LED drivers and sensor interfacing.

Equivalent

The MMBT5087LT1G is a PNP bipolar junction transistor (BJT). Equivalent products include the BC558, 2N2907, and MPS2222. Ensure to check specifications like voltage, current ratings, and package type to confirm compatibility for your specific application.