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MMBT3904LT3G
TRANS NPN 40V 0.2A SOT23-3
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- Mfr。パート #MMBT3904LT3G
- パッケージ
- データシート MMBT3904LT3G DataSheet
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仕様
| Part Status | Active |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 50mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V |
| Power - Max | 300 mW |
| Frequency - Transition | 300MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Base Product Number | MMBT3904 |
概要
Description
MMBT3904LT3G is a high-performance NPN bipolar junction transistor (BJT) designed for low-voltage and high-speed switching applications. It features a maximum collector current rating of 800mA and a collector-emitter voltage rating of 40V, making it suitable for a variety of electronic circuits, including amplifiers and signal processing. With a high current gain (hFE) and fast switching speeds, the MMBT3904LT3G is ideal for use in digital logic circuits, relay drivers, and power management applications.
The transistor is housed in a compact SOT-23 package, which is advantageous for space-constrained designs. Its robust thermal performance allows for operation in a wide range of temperatures, ensuring reliability in various environments. Overall, MMBT3904LT3G is a versatile and efficient choice for engineers and designers looking to implement reliable and efficient switching solutions in their projects.
The transistor is housed in a compact SOT-23 package, which is advantageous for space-constrained designs. Its robust thermal performance allows for operation in a wide range of temperatures, ensuring reliability in various environments. Overall, MMBT3904LT3G is a versatile and efficient choice for engineers and designers looking to implement reliable and efficient switching solutions in their projects.
Features
The MMBT3904LT3G is a NPN bipolar junction transistor (BJT) widely used for general-purpose amplification and switching applications. Key features include:
1. Type: NPN transistor.
2. Max Collector Current (Ic): 200 mA.
3. Max Collector-Emitter Voltage (Vce): 40 V.
4. Gain (hFE): High current gain (typically 100-300 at Ic = 10 mA).
5. Frequency Response: Transition frequency (fT) of around 250 MHz, suitable for high-speed applications.
6. Package: SOT-23, which is compact and surface mountable.
7. Operating Temperature: Junction temperature range from -55°C to +150°C.
8. Applications: Ideal for low power amplifiers, switching circuits, and signal processing.
The combination of high gain, low noise, and compact size makes the MMBT3904LT3G a popular choice in consumer electronics and various electronic devices.
1. Type: NPN transistor.
2. Max Collector Current (Ic): 200 mA.
3. Max Collector-Emitter Voltage (Vce): 40 V.
4. Gain (hFE): High current gain (typically 100-300 at Ic = 10 mA).
5. Frequency Response: Transition frequency (fT) of around 250 MHz, suitable for high-speed applications.
6. Package: SOT-23, which is compact and surface mountable.
7. Operating Temperature: Junction temperature range from -55°C to +150°C.
8. Applications: Ideal for low power amplifiers, switching circuits, and signal processing.
The combination of high gain, low noise, and compact size makes the MMBT3904LT3G a popular choice in consumer electronics and various electronic devices.
Package
The MMBT3904LT3G is typically available in a SOT-23 package type. This is a small, surface-mount package used for various electronic applications, providing efficient space utilization and thermal performance.
Pinout
The MMBT3904LT3G is a NPN bipolar junction transistor (BJT) in a surface-mount package. It typically has a 3-pin configuration, with the following pin functions:
1. Collector (C): Pin 1 – This is where the output current is taken from. It connects to the positive voltage supply in a common-emitter configuration.
2. Base (B): Pin 2 – This pin controls the transistor. A small current applied to the base allows a larger current to flow from collector to emitter.
3. Emitter (E): Pin 3 – This pin is where the current exits the transistor, typically connected to ground in common-emitter configurations.
The MMBT3904LT3G is often used in signal amplification and switching applications due to its favorable characteristics and small footprint.
1. Collector (C): Pin 1 – This is where the output current is taken from. It connects to the positive voltage supply in a common-emitter configuration.
2. Base (B): Pin 2 – This pin controls the transistor. A small current applied to the base allows a larger current to flow from collector to emitter.
3. Emitter (E): Pin 3 – This pin is where the current exits the transistor, typically connected to ground in common-emitter configurations.
The MMBT3904LT3G is often used in signal amplification and switching applications due to its favorable characteristics and small footprint.
Manufacturer
The MMBT3904LT3G is manufactured by ON Semiconductor, a global company that specializes in semiconductor solutions. ON Semiconductor focuses on providing a wide range of products, including power management, analog, and logic devices, as well as discrete components like transistors and diodes. The company serves various markets, including automotive, industrial, and consumer electronics. ON Semiconductor is known for its innovation in energy-efficient technologies and plays a key role in the development of sustainable solutions in the semiconductor industry.
Application
The MMBT3904LT3G is a NPN bipolar junction transistor commonly used in low-power switching and amplification applications. Its primary application areas include audio amplifiers, signal processing, and driver circuits for LEDs and relays. It is also utilized in consumer electronics, automotive systems, and various digital circuits due to its high-speed performance and low noise characteristics.
Equivalent
The MMBT3904LT3G is a NPN bipolar junction transistor (BJT). Equivalent products include the 2N3904, BC547, and 2N2222. These transistors can often be used interchangeably in low-power applications, but check specifications for voltage and current ratings to ensure compatibility.
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