MMBT2222AWT1G

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MMBT2222AWT1G

TRANS NPN 40V 0.6A SC70-3

100% オリジナル &新しい

出荷の準備ができている24時間

365日の保証

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仕様

Supplier onsemi,Flip Electronics,Rochester Electronics, LLC
Package Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
TransistorType NPN
Current-Collector(Ic)(Max) 600 mA
Voltage-CollectorEmitterBreakdown(Max) 40 V
VceSaturation(Max)@IbIc 1V @ 50mA, 500mA
DCCurrentGain(hFE)(Min)@IcVce 100 @ 150mA, 10V
Power-Max 150 mW
Frequency-Transition 300MHz
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case SC-70, SOT-323

概要

Description

MMBT2222AWT1G is a general-purpose NPN bipolar junction transistor (BJT) designed for various switching and amplification applications. It is commonly used in low-power devices due to its versatility, reliability, and affordability.
Key features include a maximum collector current of 800 mA, a maximum collector-emitter voltage (Vce) of 40V, and a DC current gain (hFE) range between 100 and 300, depending on the specific conditions. The transistor is typically housed in a TO-92 package, making it suitable for through-hole mounting in circuits.
Applications for the MMBT2222AWT1G include signal amplification, switching applications in digital circuits, and interfacing with microcontrollers. Its ability to operate efficiently at high frequencies makes it ideal for RF applications as well.
In summary, MMBT2222AWT1G is a versatile component used widely in electronic circuits for both amplification and switching purposes.

Features

The MMBT2222AWT1G is a NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. Key features include:
1. Maximum Ratings: Collector-Emitter Voltage (Vce) up to 40V, Collector Current (Ic) up to 600mA, and a maximum power dissipation of 500mW.

2. Gain: It has a minimum DC current gain (hFE) of 100, allowing for effective amplification of signals.
3. Package Type: It comes in a SOT-23 package, which is compact and suitable for surface mounting.
4. Operating Temperature: It can operate in a wide temperature range from -55°C to +150°C.
5. Fast Switching Speed: The MMBT2222AWT1G is capable of fast switching, making it ideal for high-speed applications.
6. Low Noise: The transistor exhibits low noise performance, beneficial for signal amplification.
These characteristics make the MMBT2222AWT1G suitable for a variety of electronic circuits, including consumer electronics, automotive, and industrial applications.

Package

The MMBT2222AWT1G is packaged in a SOT-23 (Small Outline Transistor) surface mount package. This compact package design is commonly used for various electronic applications, providing efficient space utilization and thermal performance.

Pinout

The MMBT2222AWT1G is a NPN bipolar junction transistor (BJT) in a SOT-23 package. It has a total of 3 pins.
### Pin Configuration:
1. Base (B) - This pin is used to control the transistor's operation by applying a voltage relative to the emitter.
2. Collector (C) - This pin is the output side of the transistor, where the load is connected. Current flows from the collector to the emitter when the base is activated.
3. Emitter (E) - This pin is the reference point for the collector current. It provides a path for current to flow out of the transistor.
### Functions:
- The MMBT2222AWT1G is commonly used for switching and amplification applications in electronic circuits. Its compact size and efficiency make it suitable for low-power signal amplification and switching tasks in various electronic devices.
For detailed specifications, refer to the manufacturer's datasheet.

Manufacturer

The manufacturer of the MMBT2222AWT1G is ON Semiconductor. ON Semiconductor is a global semiconductor company that designs and manufactures a wide range of innovative semiconductor solutions for various applications, including automotive, industrial, and consumer electronics. They provide power management, analog, logic, timing, interface, discrete components, and custom solutions to facilitate the development of energy-efficient and high-performance electronic systems. The company focuses on sustainability and advancing technology to address the increasing demand for connectivity and efficiency in modern devices.

Application

The MMBT2222AWT1G is a NPN bipolar junction transistor commonly used in low-power amplification and switching applications. Its typical application areas include signal amplification in audio devices, driver circuits for LEDs, and control circuits in consumer electronics. It's also utilized in general-purpose switching applications due to its fast switching speed and compact size, making it suitable for portable devices and battery-operated equipment.

Equivalent

The MMBT2222AWT1G is a NPN bipolar junction transistor (BJT) often used in low-power switching and amplification. Equivalent products include:
1. 2N2222
2. BC547
3. MMBT3904
4. MPS2222
Ensure to check specifications, such as current ratings and voltage limits, for compatibility in specific applications.

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出荷料参照（DHL/FedEx）:

DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

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