画像は参照用のみです。
MMBFJ113
JFET N-CH 35V 350MW SOT23
- メーカー
- Mfr。パート #MMBFJ113
- パッケージ SOT-23
- データシート MMBFJ113 DataSheet
- 在庫中3775
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | N-Channel |
| Voltage-Breakdown(V(BR)GSS) | 35 V |
| Current-Drain(Idss)@Vds(Vgs=0) | 2 mA @ 15 V |
| Voltage-Cutoff(VGSoff)@Id | 500 mV @ 1 µA |
| Resistance-RDS(On) | 100 Ohms |
| Power-Max | 350 mW |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | TO-236-3, SC-59, SOT-23-3 |
概要
Description
MMBFJ113 is likely a course or module identifier, often used in academic settings. While specific details may vary depending on the institution, it typically involves foundational topics in a particular field, such as finance, business, or mathematics.
An "Introduction to MMBFJ113" could cover the course objectives, key concepts, and expected outcomes. It might include an overview of core theories, methodologies, and applications relevant to the subject matter. Students are generally introduced to essential skills and knowledge that will be built upon in subsequent courses.
To succeed, participants are often encouraged to engage in class discussions, complete assignments, and collaborate on projects, fostering a comprehensive understanding of the material. Pre-requisites may vary, and students are advised to refer to their institution's course catalog for specific requirements and expectations.
An "Introduction to MMBFJ113" could cover the course objectives, key concepts, and expected outcomes. It might include an overview of core theories, methodologies, and applications relevant to the subject matter. Students are generally introduced to essential skills and knowledge that will be built upon in subsequent courses.
To succeed, participants are often encouraged to engage in class discussions, complete assignments, and collaborate on projects, fostering a comprehensive understanding of the material. Pre-requisites may vary, and students are advised to refer to their institution's course catalog for specific requirements and expectations.
Features
The MMBFJ113 is an N-channel JFET transistor commonly used in low-noise amplification applications. Key features include:
1. Type: N-channel JFET.
2. Low Noise: Ideal for RF and audio applications due to its low noise figure.
3. Voltage Ratings: Maximum drain-source voltage (VDS) is typically around 25V.
4. Current Ratings: Continuous drain current (ID) can reach up to 30 mA.
5. Gain: Offers good transconductance, providing effective gain characteristics.
6. Package: Available in various packages, including SOT-23 and TO-92, suitable for compact designs.
7. High Input Impedance: Great for interfacing with high-impedance sources.
8. Temperature Range: Operates effectively over a wide temperature range, typically from -55°C to +150°C.
These features make the MMBFJ113 a popular choice in analog signal processing, RF amplifiers, and sensor applications.
1. Type: N-channel JFET.
2. Low Noise: Ideal for RF and audio applications due to its low noise figure.
3. Voltage Ratings: Maximum drain-source voltage (VDS) is typically around 25V.
4. Current Ratings: Continuous drain current (ID) can reach up to 30 mA.
5. Gain: Offers good transconductance, providing effective gain characteristics.
6. Package: Available in various packages, including SOT-23 and TO-92, suitable for compact designs.
7. High Input Impedance: Great for interfacing with high-impedance sources.
8. Temperature Range: Operates effectively over a wide temperature range, typically from -55°C to +150°C.
These features make the MMBFJ113 a popular choice in analog signal processing, RF amplifiers, and sensor applications.
Package
The MMBFJ113 is typically available in a SOT-23 package type.
Pinout
The MMBFJ113 is a JFET (Junction Field Effect Transistor) designed for low-noise applications. It comes in a SOT-23 package, which typically has 3 pins.
### Pin Configuration:
1. Gate (G) - The control terminal where the input signal is applied.
2. Drain (D) - The terminal where the output is taken, usually connected to a load.
3. Source (S) - The terminal that is generally grounded or connected to a reference voltage.
### Functions:
- Gate (G): Controls the flow of current between Drain and Source by modulating the electric field.
- Drain (D): Outputs the amplified signal or power, influenced by the signal at the Gate.
- Source (S): Completes the circuit and provides a path for the current.
This configuration allows MMBFJ113 to be used in various amplifying and switching applications.
### Pin Configuration:
1. Gate (G) - The control terminal where the input signal is applied.
2. Drain (D) - The terminal where the output is taken, usually connected to a load.
3. Source (S) - The terminal that is generally grounded or connected to a reference voltage.
### Functions:
- Gate (G): Controls the flow of current between Drain and Source by modulating the electric field.
- Drain (D): Outputs the amplified signal or power, influenced by the signal at the Gate.
- Source (S): Completes the circuit and provides a path for the current.
This configuration allows MMBFJ113 to be used in various amplifying and switching applications.
Manufacturer
The MMBFJ113 is manufactured by NXP Semiconductors, a global semiconductor company. NXP specializes in providing a wide range of products, including microcontrollers, processors, sensors, and RF solutions, catering to various industries such as automotive, industrial, and consumer electronics. Founded in 2006 as a spin-off from Philips, NXP has become a significant player in the semiconductor market, known for its innovation and focus on secure connectivity solutions. The MMBFJ113 is a JFET (junction field-effect transistor) used in applications like RF amplifiers and switching, highlighting NXP's commitment to supporting advanced electronic design and development.
Application
The MMBFJ113 is a low-noise, N-channel JFET primarily used in applications such as RF amplification, analog signal processing, and audio preamplifiers. Its high input impedance and low noise characteristics make it suitable for sensor and instrumentation circuits, as well as in buffer amplifiers. Additionally, it can be used in switching circuits and for impedance matching in various electronic devices.
Equivalent
The MMBFJ113 is a JFET (Junction Field Effect Transistor) known for its low noise and high input impedance. Equivalent products include:
1. J113
2. 2N5457
3. 2N5458
4. 2N5459
These transistors can serve similar applications in low-noise amplification and signal processing. Always verify specific electrical characteristics for compatibility in your application.
1. J113
2. 2N5457
3. 2N5458
4. 2N5459
These transistors can serve similar applications in low-noise amplification and signal processing. Always verify specific electrical characteristics for compatibility in your application.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
類似
-
MX25L3233FM1I-08Q
Macronix
-
MX25V1635FZNQ03
Macronix
-
MX29F400CBTI-70G
Macronix
-
MX25V5126FM1I
Macronix
-
MX25V16066M1I02
Macronix
-
MX30LF2G28AD-TI
Macronix
-
MX25R6435FBDIL0
Macronix
-
MX25L25673GMI-08G
Macronix
-
MX29GL512FHXFI-11..
Macronix
-
MX25L2006EM1I-12G
Macronix
-
MX25U3232FZBI02
Macronix
-
MX25L12833FM2I-10..
Macronix