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MMBD7000LT1G

Name: MMBD7000LT1G
Rating: 4.7 (12 reviews)

DIODE ARRAY GP 100V 200MA SOT23

メーカー
Mfr。パート #MMBD7000LT1G
パッケージ SOT23-3
データシート
在庫中5866

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仕様

Package	Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus	Active
DiodeConfiguration	1 Pair Series Connection
DiodeType	Standard
Voltage-DCReverse(Vr)(Max)	100 V
Current-AverageRectified(Io)(perDiode)	200mA (DC)
Voltage-Forward(Vf)(Max)@If	1.1 V @ 100 mA
Speed	Small Signal =< 200mA (Io), Any Speed
ReverseRecoveryTime(trr)	4 ns
Current-ReverseLeakage@Vr	3 µA @ 100 V
OperatingTemperature-Junction	-55°C ~ 150°C
MountingType	Surface Mount
Package/Case	TO-236-3, SC-59, SOT-23-3

概要

Description

The MMBD7000LT1G is a dual general-purpose silicon switching diode designed for applications in signal processing and signal routing. It features low forward voltage drop and fast switching speeds, making it suitable for use in various electronic circuits. The device is housed in a compact SOT-23 package, which enables efficient space-saving designs in printed circuit boards (PCBs).
Key specifications include a maximum reverse voltage (V_R) of 70 volts and a maximum forward current (I_F) of 200 milliamps, allowing for versatile use in different electronic applications. Its low leakage current and high reliability also make it a popular choice for both consumer and industrial electronics.
Overall, the MMBD7000LT1G is widely utilized in switching applications, clamping, and rectification tasks, providing designers with an effective solution for enhancing circuit performance.

Features

The MMBD7000LT1G is a dual N-channel MOSFET designed for low-voltage, high-speed switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 60V, making it suitable for various applications.
2. Current Rating: The device can handle a continuous drain current (Id) of up to 1.0A, providing reliable performance in low-power circuits.
3. Rds(on): It offers a low on-resistance (Rds(on)) of approximately 0.5 ohms, enhancing efficiency by minimizing power loss during operation.
4. Switching Speed: The MMBD7000LT1G supports fast switching speeds, ideal for applications requiring quick turn-on and turn-off times.
5. Package: It comes in a compact SOT-23 package, facilitating easy integration into space-constrained designs.
6. Applications: Commonly used in low-voltage power management, DC-DC converters, and signal switching.
These characteristics make the MMBD7000LT1G a versatile choice for modern electronic designs requiring efficient and reliable performance.

Package

The MMBD7000LT1G is packaged in a SOT-23 form factor. This compact surface-mount package is designed for ease of use in various electronic applications.

Pinout

The MMBD7000LT1G is a dual small signal Schottky diode package. It comes in a SOT-363 package, which has a total of 6 pins. The pin configuration is as follows:
1. Anode of Diode 1
2. Cathode of Diode 1
3. Cathode of Diode 2
4. Anode of Diode 2
5. NC (No Connect)
6. GND (Ground)
The diodes are designed for applications such as clamping, signal detection, and switching. The MMBD7000LT1G features low forward voltage drop and fast switching speeds, making it suitable for high-frequency applications and efficient in signal processing.

Manufacturer

The MMBD7000LT1G is manufactured by ON Semiconductor. ON Semiconductor is a global semiconductor company that provides a wide range of products and services, including power management, analog, logic, timing, connectivity, and custom devices. The company focuses on enabling energy-efficient solutions, particularly in automotive, industrial, and consumer electronics sectors. With a strong commitment to innovation and sustainability, ON Semiconductor aims to help customers address their most pressing challenges in an increasingly connected and energy-sensitive world.

Application

The MMBD7000LT1G is a general-purpose dual N-channel MOSFET used in various applications, including switching power supplies, low-voltage motor control, and signal amplification. It is suitable for use in consumer electronics, automotive systems, and industrial automation, providing efficient performance in power management and signal processing tasks. Its compact package and low on-resistance make it ideal for space-constrained applications.

Equivalent

The MMBD7000LT1G is a dual, general-purpose N-channel MOSFET. Equivalent products include the MMBT3904, 2N7000, and 2N7002. For more specific applications, refer to similar dual MOSFETs or Schottky diodes based on your circuit requirements. Always check the datasheets for compatibility in specifications.