MJD210T4G

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MJD210T4G

TRANS PNP 25V 5A DPAK

100% オリジナル &新しい

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仕様

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
TransistorType PNP
Current-Collector(Ic)(Max) 5 A
Voltage-CollectorEmitterBreakdown(Max) 25 V
VceSaturation(Max)@IbIc 1.8V @ 1A, 5A
Current-CollectorCutoff(Max) 100nA (ICBO)
DCCurrentGain(hFE)(Min)@IcVce 45 @ 2A, 1V
Power-Max 1.4 W
Frequency-Transition 65MHz
OperatingTemperature -65°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-252-3, DPak (2 Leads + Tab), SC-63

概要

Description

MJD210T4G is typically a designation for a specific electronic component, often a high-power N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). It is used in various applications such as power management, switching, and amplification in electronic circuits. The device is known for its efficiency and ability to handle significant voltage and current levels, making it suitable for automotive, industrial, and consumer electronics. Key specifications usually include maximum drain-source voltage, continuous drain current, and gate threshold voltage. Datasheets provide detailed information on electrical characteristics, thermal performance, and recommended operating conditions, which are essential for designers to integrate the component effectively into their circuits. Understanding these parameters is crucial for optimizing performance and ensuring reliability in applications. Always refer to the manufacturer's datasheet for the most accurate and comprehensive information.

Features

The MJD210T4G is a high-performance N-channel MOSFET designed for various applications, primarily in power management and switching. Key features include:
1. Voltage Rating: It typically offers a drain-source breakdown voltage of 60V, allowing it to handle moderate power levels.
2. Current Rating: The device can support continuous drain currents of up to 33A, making it suitable for high-load applications.
3. On-Resistance: It boasts a low on-resistance (RDS(on)), which minimizes power losses and improves efficiency during operation.
4. Fast Switching: The MOSFET is designed for rapid switching, enhancing performance in fast switching applications such as converters and inverters.
5. Thermal Performance: With a junction-to-ambient thermal resistance, it ensures effective heat dissipation, contributing to reliability in thermal management.
6. Package Type: Typically available in TO-220 or similar packages for easy mounting on PCBs.
These features make the MJD210T4G suitable for use in automotive, industrial, and consumer electronics applications.

Package

The MJD210T4G is packaged in a TO-220 style, which is a metal-can package designed for high power applications. This package type provides efficient heat dissipation, making it suitable for transistors used in power management and amplifier applications.

Pinout

The MJD210T4G is a NPN power transistor commonly used in various electronic applications. It comes in a TO-220 package, which typically features three pins.
Pin Count and Function:
1. Base (B): This pin controls the transistor's operation by allowing current to flow into the base, enabling the collector-emitter current.
2. Collector (C): The collector pin is where the primary current flows into the transistor from the load.
3. Emitter (E): The emitter pin is where the current exits the transistor back to ground or to the circuit.
In summary, the MJD210T4G has three pins: Base, Collector, and Emitter, each serving essential functions for controlling and conducting electrical signals.

Manufacturer

The manufacturer of the MJD210T4G is ON Semiconductor. ON Semiconductor is a global semiconductor company that specializes in providing a wide range of products, including power management, analog, sensors, and connectivity solutions. The company serves various sectors such as automotive, industrial, consumer electronics, and telecommunications. ON Semiconductor focuses on innovation and efficiency, catering to the growing demand for energy-efficient and performance-driven electronic components.

Application

The MJD210T4G is a NPN power transistor commonly used in various applications, including automotive electronics, industrial motor control, power switching, and amplifiers. Its high current gain and robust performance make it suitable for use in power management systems, signal amplification, and inverters, as well as in consumer electronics for driving loads and controlling power circuits.

Equivalent

The MJD210T4G is a NPN power transistor. Equivalent products include:
1. 2N3055
2. TIP31
3. BD139
4. TIP120 (for higher gain)
Always verify specifications like voltage, current rating, and package type to ensure compatibility for your specific application.

出荷

出荷方法私たち

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出荷料参照(DHL/FedEx):

DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。

支払い

Payment Methods

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