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MJD200T4G
TRANS NPN 25V 5A DPAK
- メーカー
- Mfr。パート #MJD200T4G
- パッケージ DPAK-3
- データシート
- 在庫中7487
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仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| TransistorType | NPN |
| Current-Collector(Ic)(Max) | 5 A |
| Voltage-CollectorEmitterBreakdown(Max) | 25 V |
| VceSaturation(Max)@IbIc | 1.8V @ 1A, 5A |
| Current-CollectorCutoff(Max) | 100nA (ICBO) |
| DCCurrentGain(hFE)(Min)@IcVce | 45 @ 2A, 1V |
| Power-Max | 1.4 W |
| Frequency-Transition | 65MHz |
| OperatingTemperature | -65°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
概要
Description
MJD200T4G is a specific N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic circuits for switching and amplification applications. It features low on-resistance, high-speed operation, and is designed for efficient power management. The device typically supports high voltage and current ratings, making it suitable for various applications, including power supplies, motor control, and automotive systems.
Key specifications often include a maximum drain-source voltage (V_DS), a drain current (I_D), and an R_DS(on) that indicates its efficiency. The MJD200T4G is packaged in a TO-220 form factor, facilitating heat dissipation.
Engineers often choose this MOSFET for its reliability, thermal performance, and ease of integration into circuit designs. It is crucial for applications requiring rapid switching and minimal energy loss. For detailed characteristics, users should consult the manufacturer's datasheet to ensure compatibility with their specific circuits.
Key specifications often include a maximum drain-source voltage (V_DS), a drain current (I_D), and an R_DS(on) that indicates its efficiency. The MJD200T4G is packaged in a TO-220 form factor, facilitating heat dissipation.
Engineers often choose this MOSFET for its reliability, thermal performance, and ease of integration into circuit designs. It is crucial for applications requiring rapid switching and minimal energy loss. For detailed characteristics, users should consult the manufacturer's datasheet to ensure compatibility with their specific circuits.
Features
The MJD200T4G is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Ratings: Typically has a maximum drain-source voltage (V_DS) of around 60V, making it suitable for medium voltage applications.
2. Current Handling: Capable of handling continuous drain current (I_D) up to 30A, depending on thermal conditions.
3. Low R_DS(on): Offers low on-resistance, reducing conduction losses and improving efficiency.
4. Fast Switching: Designed for high-speed switching, ideal for applications such as DC-DC converters.
5. Thermal Performance: Features a TO-220 package that aids in heat dissipation, ensuring reliable operation at higher power levels.
6. Gate-Source Voltage: Supports a gate-source voltage (V_GS) of ±20V, allowing for compatibility with standard gate drive circuits.
7. Applications: Commonly used in power supplies, motor drives, and automotive applications due to its robustness and efficiency.
These features make the MJD200T4G a versatile choice in power electronics.
1. Voltage Ratings: Typically has a maximum drain-source voltage (V_DS) of around 60V, making it suitable for medium voltage applications.
2. Current Handling: Capable of handling continuous drain current (I_D) up to 30A, depending on thermal conditions.
3. Low R_DS(on): Offers low on-resistance, reducing conduction losses and improving efficiency.
4. Fast Switching: Designed for high-speed switching, ideal for applications such as DC-DC converters.
5. Thermal Performance: Features a TO-220 package that aids in heat dissipation, ensuring reliable operation at higher power levels.
6. Gate-Source Voltage: Supports a gate-source voltage (V_GS) of ±20V, allowing for compatibility with standard gate drive circuits.
7. Applications: Commonly used in power supplies, motor drives, and automotive applications due to its robustness and efficiency.
These features make the MJD200T4G a versatile choice in power electronics.
Package
The MJD200T4G is typically packaged in a TO-220 package type, which is a metal tab-style package designed for efficient heat dissipation. This package is commonly used for power transistors and provides good thermal performance and electrical insulation.
Pinout
The MJD200T4G is a N-channel MOSFET designed for high-speed switching applications. It features a total of 3 pins.
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D) - This pin is where the load current enters the MOSFET. It connects to the power supply or load in a circuit.
3. Source (S) - This pin is where the current exits the MOSFET. It is typically connected to ground in a low-side switch configuration.
The MJD200T4G is commonly used in power management and switching applications due to its capability to handle high current and voltage levels.
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D) - This pin is where the load current enters the MOSFET. It connects to the power supply or load in a circuit.
3. Source (S) - This pin is where the current exits the MOSFET. It is typically connected to ground in a low-side switch configuration.
The MJD200T4G is commonly used in power management and switching applications due to its capability to handle high current and voltage levels.
Manufacturer
The MJD200T4G is manufactured by On Semiconductor, a global semiconductor company headquartered in Phoenix, Arizona. On Semiconductor specializes in designing and producing a wide range of semiconductor solutions, including discrete components, analog ICs, and power management devices. The company serves various markets, including automotive, industrial, communications, and consumer electronics. On Semiconductor is known for its focus on energy-efficient technology and innovation, providing products that enable advanced electronic applications while promoting sustainability.
Application
The MJD200T4G is a high-performance N-channel MOSFET used in various application areas, including power management, DC-DC converters, motor control, and switching power supplies. Its low on-resistance and high-speed switching capabilities make it ideal for automotive applications, renewable energy systems, and electronic devices requiring efficient power handling and thermal performance.
Equivalent
The MJD200T4G is a high-voltage NPN transistor. Equivalent products include the MJD200, MJD201, and MPSU10. For similar specifications, consider the TIP31 or TIP32 transistors. Always verify the specific parameters like voltage, current rating, and package type to ensure compatibility with your application.
出荷
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
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