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MJD122T4
TRANS DARL NPN 8A 100V DPAK
- メーカー
- Mfr。パート #MJD122T4
- パッケージ DPAK-3
- データシート
- 在庫中6816
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Package | Cut Tape (CT) |
| ProductStatus | Obsolete |
| TransistorType | NPN - Darlington |
| Current-Collector(Ic)(Max) | 8 A |
| Voltage-CollectorEmitterBreakdown(Max) | 100 V |
| VceSaturation(Max)@IbIc | 2V @ 15mA, 4A |
| Current-CollectorCutoff(Max) | 10µA |
| DCCurrentGain(hFE)(Min)@IcVce | 1000 @ 4A, 4V |
| Power-Max | 20 W |
| Frequency-Transition | 4MHz |
| OperatingTemperature | -65°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
概要
Description
MJD122T4, or "Introduction to MJD122T4," refers to a foundational course or module that likely covers the basic principles and concepts related to the subject it pertains to. While the specific content can vary, typical topics might include an overview of key theories, fundamental practices, or essential skills relevant to the field.
The course is designed to equip students with a foundational understanding, preparing them for more advanced study or practical application. It may include lectures, readings, discussions, and assessments to evaluate comprehension and engagement with the material.
Whether it focuses on a scientific, technological, or artistic discipline, the goal is often to foster critical thinking and a comprehensive understanding of the subject matter. Please check the specific educational institution or resource for detailed syllabus and objectives related to MJD122T4.
The course is designed to equip students with a foundational understanding, preparing them for more advanced study or practical application. It may include lectures, readings, discussions, and assessments to evaluate comprehension and engagement with the material.
Whether it focuses on a scientific, technological, or artistic discipline, the goal is often to foster critical thinking and a comprehensive understanding of the subject matter. Please check the specific educational institution or resource for detailed syllabus and objectives related to MJD122T4.
Features
The MJD122T4 is an N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: It typically supports a drain-source voltage (V_DS) of up to 60V, making it suitable for various power management tasks.
2. Current Rating: It can handle continuous drain currents (I_D) of around 30A, allowing for efficient power conversion.
3. R_DS(on): Low on-resistance (R_DS(on)) value, typically around 0.045Ω, minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage (V_GS(th)): Usually in the range of 2-4V, enabling easy drive from standard logic levels.
5. Package Type: Available in TO-220 or DPAK packages, facilitating thermal management and integration into circuit designs.
6. High Speed: Designed for rapid switching, ideal for applications in power supplies, motor drivers, and DC-DC converters.
These features make the MJD122T4 versatile for both consumer electronics and industrial applications.
1. Voltage Rating: It typically supports a drain-source voltage (V_DS) of up to 60V, making it suitable for various power management tasks.
2. Current Rating: It can handle continuous drain currents (I_D) of around 30A, allowing for efficient power conversion.
3. R_DS(on): Low on-resistance (R_DS(on)) value, typically around 0.045Ω, minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage (V_GS(th)): Usually in the range of 2-4V, enabling easy drive from standard logic levels.
5. Package Type: Available in TO-220 or DPAK packages, facilitating thermal management and integration into circuit designs.
6. High Speed: Designed for rapid switching, ideal for applications in power supplies, motor drivers, and DC-DC converters.
These features make the MJD122T4 versatile for both consumer electronics and industrial applications.
Package
The MJD122T4 is typically available in a TO-220 package type, which is a thermally efficient, three-lead device commonly used for power transistors and voltage regulators.
Pinout
The MJD122T4 is a NPN power transistor with a total of 5 pins. The pin configuration and their functions are as follows:
1. Base (B) - Pin 1: This is the control terminal that modulates the current flowing from collector to emitter.
2. Collector (C) - Pin 2: This pin connects to the load and receives the higher voltage.
3. Emitter (E) - Pin 3: This is the terminal through which current exits the transistor.
4. Collector (C) - Pin 4: This pin is an alternative collector connection, used for enhanced thermal performance or layout flexibility.
5. Emitter (E) - Pin 5: This pin serves as an alternative emitter connection.
The MJD122T4 is typically used in power amplification and switching applications, capable of handling high currents and voltage levels.
1. Base (B) - Pin 1: This is the control terminal that modulates the current flowing from collector to emitter.
2. Collector (C) - Pin 2: This pin connects to the load and receives the higher voltage.
3. Emitter (E) - Pin 3: This is the terminal through which current exits the transistor.
4. Collector (C) - Pin 4: This pin is an alternative collector connection, used for enhanced thermal performance or layout flexibility.
5. Emitter (E) - Pin 5: This pin serves as an alternative emitter connection.
The MJD122T4 is typically used in power amplification and switching applications, capable of handling high currents and voltage levels.
Manufacturer
The MJD122T4 is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor specializes in a wide range of products, including power management, analog, and digital solutions, primarily serving the automotive, industrial, and consumer electronics markets. The company focuses on enabling energy-efficient innovations and sustainable practices, catering to the growing demand for advanced semiconductor technologies across various applications.
Application
The MJD122T4 is a high-performance NPN power transistor commonly used in applications such as switching power supplies, motor drives, and audio amplifiers. Its robust design makes it suitable for high-speed switching and linear amplification in consumer electronics, industrial automation, and automotive systems. Additionally, it can be employed in power management circuits to enhance efficiency and reliability.
Equivalent
The MJD122T4 is a dual NPN power transistor. Equivalent products include the MPSU01, MPSU06, TIP120, and BD139. For specific applications, it’s important to check specifications like voltage, current ratings, and package types to ensure compatibility. Always consult the datasheet before substitution.
出荷
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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