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MC34152DR2G
IC GATE DRVR LOW-SIDE 8SOIC
- メーカー
- Mfr。パート #MC34152DR2G
- パッケージ SOIC-8
- データシート
- 在庫中4109
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仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| DrivenConfiguration | Low-Side |
| ChannelType | Independent |
| NumberofDrivers | 2 |
| GateType | N-Channel MOSFET |
| Voltage-Supply | 6.1V ~ 18V |
| LogicVoltage-VILVIH | 0.8V, 2.6V |
| Current-PeakOutput(SourceSink) | 1.5A, 1.5A |
| InputType | Non-Inverting |
| Rise/FallTime(Typ) | 36ns, 32ns |
| OperatingTemperature | 0°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
概要
Description
The MC34152DR2G is a high-speed dual MOSFET driver manufactured by ON Semiconductor. It is designed to drive power MOSFETs and IGBTs in applications that require high-efficiency and fast switching speeds. The device features two independent drivers, each capable of sourcing and sinking up to 1.5A of peak current, which makes it suitable for controlling both N-channel and P-channel MOSFETs.
Key features of the MC34152DR2G include:
- Wide operating voltage range from 4.5V to 18V, allowing for flexible application in different systems.
- Low propagation delay, typically around 30ns, which ensures rapid response to input signals.
- TTL and CMOS compatible inputs, facilitating easy interfacing with other digital circuits.
- Built-in undervoltage lockout to prevent erratic operation when the supply voltage is too low.
- Low output impedance to minimize the risk of oscillations and improve the drive capability.
The MC34152DR2G is commonly used in various applications including DC-DC converters, motor control circuits, and other power management systems where efficient and reliable MOSFET switching is required. It’s packaged in a standard SOIC-8 form factor, making it easy to integrate into compact designs.
Key features of the MC34152DR2G include:
- Wide operating voltage range from 4.5V to 18V, allowing for flexible application in different systems.
- Low propagation delay, typically around 30ns, which ensures rapid response to input signals.
- TTL and CMOS compatible inputs, facilitating easy interfacing with other digital circuits.
- Built-in undervoltage lockout to prevent erratic operation when the supply voltage is too low.
- Low output impedance to minimize the risk of oscillations and improve the drive capability.
The MC34152DR2G is commonly used in various applications including DC-DC converters, motor control circuits, and other power management systems where efficient and reliable MOSFET switching is required. It’s packaged in a standard SOIC-8 form factor, making it easy to integrate into compact designs.
Features
The MC34152DR2G is a high-speed dual MOSFET driver designed for efficient switching applications. Key features include:
1. Dual Channels: Provides two independent drivers for driving two MOSFETs, enhancing versatility in applications.
2. High-Speed Operation: Typically offers fast rise and fall times, enabling quick switching to improve performance in high-frequency applications.
3. High Current Drive Capability: Can source and sink large currents, typically up to 1.5A, suitable for driving large gate-charge MOSFETs.
4. Wide Supply Voltage Range: Operates across a broad voltage range, typically from 4.5V to 18V, making it suitable for various power supply levels.
5. Low Output Impedance: Ensures efficient power transfer and reduces power losses during operation.
6. Undervoltage Lockout Protection: Provides built-in protection to prevent operation under unsafe voltage levels, enhancing reliability.
7. Thermal Shutdown: Protects the device from overheating by automatically disabling outputs if the temperature exceeds safe limits.
8. Compact Package: Available in a surface-mount package, facilitating compact and efficient PCB designs.
These features make the MC34152DR2G ideal for power management, motor control, and other high-speed switching applications.
1. Dual Channels: Provides two independent drivers for driving two MOSFETs, enhancing versatility in applications.
2. High-Speed Operation: Typically offers fast rise and fall times, enabling quick switching to improve performance in high-frequency applications.
3. High Current Drive Capability: Can source and sink large currents, typically up to 1.5A, suitable for driving large gate-charge MOSFETs.
4. Wide Supply Voltage Range: Operates across a broad voltage range, typically from 4.5V to 18V, making it suitable for various power supply levels.
5. Low Output Impedance: Ensures efficient power transfer and reduces power losses during operation.
6. Undervoltage Lockout Protection: Provides built-in protection to prevent operation under unsafe voltage levels, enhancing reliability.
7. Thermal Shutdown: Protects the device from overheating by automatically disabling outputs if the temperature exceeds safe limits.
8. Compact Package: Available in a surface-mount package, facilitating compact and efficient PCB designs.
These features make the MC34152DR2G ideal for power management, motor control, and other high-speed switching applications.
Package
The MC34152DR2G is typically available in a surface-mount package known as SOIC-8 (Small Outline Integrated Circuit with 8 pins). This package type is widely used for its compact size and ease of assembly on printed circuit boards (PCBs).
Pinout
The MC34152DR2G is a dual non-inverting high-speed power MOSFET driver IC. It is designed to source and sink high peak currents to drive power MOSFETs efficiently. The device comes in an 8-pin SOIC (Small Outline Integrated Circuit) package. Here is a brief overview of its pin functions:
1. VCC (Pin 1): Supply voltage for the driver.
2. INA (Pin 2): Input control signal for channel A.
3. EN (Pin 3): Enable pin; when active, it enables both driver channels.
4. INB (Pin 4): Input control signal for channel B.
5. OUTB (Pin 5): Output for channel B; drives the gate of a power MOSFET.
6. GND (Pin 6): Ground reference for the device.
7. OUTA (Pin 7): Output for channel A; drives the gate of a power MOSFET.
8. NC (Pin 8): No connection.
The MC34152DR2G is primarily used in applications requiring high-speed switching to control power MOSFETs effectively. Its high peak output current capability and fast switching speed make it suitable for use in various power supply and motor control applications.
1. VCC (Pin 1): Supply voltage for the driver.
2. INA (Pin 2): Input control signal for channel A.
3. EN (Pin 3): Enable pin; when active, it enables both driver channels.
4. INB (Pin 4): Input control signal for channel B.
5. OUTB (Pin 5): Output for channel B; drives the gate of a power MOSFET.
6. GND (Pin 6): Ground reference for the device.
7. OUTA (Pin 7): Output for channel A; drives the gate of a power MOSFET.
8. NC (Pin 8): No connection.
The MC34152DR2G is primarily used in applications requiring high-speed switching to control power MOSFETs effectively. Its high peak output current capability and fast switching speed make it suitable for use in various power supply and motor control applications.
Manufacturer
The MC34152DR2G is manufactured by ON Semiconductor, which is now known as onsemi. Onsemi is a leading semiconductor company that focuses on driving energy-efficient innovations, empowering customers to reduce global energy use. The company provides a wide range of products, including power and signal management, logic, discrete, and custom devices for automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace, and power applications. Onsemi emphasizes intelligent technology solutions that are essential for smart building, grid infrastructure, automotive, and various other industries, contributing to a sustainable future.
Application
The MC34152DR2G is a dual non-inverting high-speed power MOSFET driver. It is commonly used in applications requiring efficient driving of power transistors, such as switch-mode power supplies, motor control systems, and high-frequency power conversion. Its ability to deliver high current and operate at fast switching speeds makes it suitable for enhancing the performance of MOSFETs in these applications.
Equivalent
The MC34152DR2G is a dual high-speed power MOSFET driver. Equivalent products include:
1. Texas Instruments UCC27322
2. Microchip Technology TC4420
3. ON Semiconductor NCP5181
4. Vishay SiP41102
These equivalents offer similar performance, voltage range, and operational features suitable for driving power MOSFETs. Always verify specific requirements and pin configurations for compatibility.
1. Texas Instruments UCC27322
2. Microchip Technology TC4420
3. ON Semiconductor NCP5181
4. Vishay SiP41102
These equivalents offer similar performance, voltage range, and operational features suitable for driving power MOSFETs. Always verify specific requirements and pin configurations for compatibility.
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フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
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TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
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