画像は参照用のみです。

MBRAF3200T3G

Name: MBRAF3200T3G
Rating: 4.7 (12 reviews)

DIODE SCHOTTKY 200V 3A SMA-FL

メーカー
Mfr。パート #MBRAF3200T3G
パッケージ DO-221AC, SMA Flat Leads
データシート MBRAF3200T3G DataSheet
在庫中27191

+BOM RFQについて

100% オリジナル &新しい

出荷の準備ができている24時間

365日の保証

RFQおよびもっと割引を得る

仕様

Supplier	onsemi
Package	Tape & Reel (TR),Cut Tape (CT)
ProductStatus	Active
DiodeType	Schottky
Voltage-DCReverse(Vr)(Max)	200 V
Current-AverageRectified(Io)	3A
Voltage-Forward(Vf)(Max)@If	840 mV @ 3 A
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Current-ReverseLeakage@Vr	1 mA @ 200 V
MountingType	Surface Mount
Package/Case	DO-221AC, SMA Flat Leads
SupplierDevicePackage	SMA-FL

概要

Description

The MBRAF3200T3G is a component of the MBRA series of rectifiers, specifically designed for various applications in power management and conversion. This component features a high voltage rating and low forward voltage drop, making it efficient for use in power supply circuits, battery chargers, and other electronic devices requiring fast switching and reliability.
Typically, the MBRAF3200T3G is characterized by its ability to handle substantial current and reverse voltages while maintaining thermal stability. Its compact package allows for easy integration into circuit designs. This component is ideal for applications in automotive, industrial, and consumer electronics.
Engineers and designers often choose the MBRAF3200T3G for its robust performance and reliability, ensuring optimal operation in demanding environments. When selecting this rectifier, it's crucial to consider specifications such as maximum ratings, thermal characteristics, and packaging to ensure compatibility with the intended application.

Features

The MBRAF3200T3G is a high-performance N-channel MOSFET designed for various power management applications. Key features include:
1. Voltage Rating: Capable of handling high voltages, with a maximum drain-source voltage (V_DS) of 30V.
2. Current Handling: Supports continuous drain current (I_D) of up to 32A, making it suitable for demanding applications.
3. Low On-Resistance: Offers a low R_DS(on) value, which enhances efficiency by reducing power loss during operation.
4. Fast Switching Speed: Designed for rapid switching, ideal for applications like DC-DC converters and power supplies.
5. Thermal Performance: Features a robust thermal performance, allowing for effective heat dissipation.
6. Package Type: Typically available in a TO-220 package, facilitating easy mounting and heat management.
These attributes make the MBRAF3200T3G suitable for automotive, industrial power systems, and consumer electronics applications.

Package

The MBRAF3200T3G is offered in a surface mount package type known as the SOIC-8 (Small Outline Integrated Circuit, 8 pins). This compact package is designed for efficient space utilization on printed circuit boards.

Pinout

The MBRAF3200T3G is a part of the BGA (Ball Grid Array) package family, specifically a 32-pin device. Its primary function is to serve as a low dropout (LDO) linear voltage regulator. The device is designed to provide a stable output voltage while tolerating variations in input voltage and load conditions, making it suitable for powering various electronic circuits and components.
The pin configuration includes pins for input voltage, ground, output voltage, and additional control features, such as enable and feedback. The specific arrangement of these pins facilitates efficient thermal management and connection on printed circuit boards (PCBs). Overall, the MBRAF3200T3G is utilized in applications requiring reliable voltage regulation, such as consumer electronics, industrial devices, and automotive systems.

Manufacturer

The MBRAF3200T3G is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor focuses on providing a wide range of products including power management, analog, and logic devices. The company primarily serves various industries such as automotive, industrial automation, communications, consumer electronics, and medical devices. Established in 1999 and headquartered in Phoenix, Arizona, ON Semiconductor is known for its commitment to energy-efficient technologies and innovative solutions that enhance performance while reducing environmental impact.

Application

The MBRAF3200T3G is a N-channel MOSFET primarily used in power management applications. Its application areas include DC-DC converters, switch-mode power supplies, motor drivers, and load switching. It is suitable for high-efficiency switching and amplification in electronic devices, aiding in energy management and thermal performance.

Equivalent

The MBRAF3200T3G chip is a BJT (Bipolar Junction Transistor) used primarily in RF applications. Equivalent products include the NTE2374 and the MMBT3904 for general applications. For higher frequency or specific applications, you might consider alternatives like the 2N3904 or the BC547. Always verify specifications for compatibility.