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M29W800DT70N6E
IC FLASH 8MBIT PARALLEL 48TSOP I
- メーカー
- Mfr。パート #M29W800DT70N6E
- パッケージ
- データシート
- 在庫中2073
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
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仕様
| Part Status | Obsolete |
| Base Product Number | M29W800 |
| DigiKey Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 8Mbit |
| Memory Organization | 1M x 8, 512K x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 70ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package | 48-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package | 48-TSOP I |
| Packaging | Tray |
| Access Time | 70 ns |
概要
Description
The M29W800DT70N6E is a flash memory chip manufactured by STMicroelectronics. It is part of the M29 series of parallel NOR Flash memories. This specific model offers an 8-megabit storage capacity organized as 1M x 8 or 512K x 16 bits. It is designed for use in a variety of applications, including embedded systems, industrial devices, and consumer electronics, where non-volatile storage is required.
Key features of the M29W800DT70N6E include:
1. Parallel Interface: Supports x8 or x16 parallel interface, allowing for flexible integration with microcontrollers and processors.
2. Sector Architecture: Features a sector-based architecture, enabling selective erasing and programming of memory blocks.
3. Fast Access Time: Offers a typical access time of 70 ns, suitable for high-speed applications.
4. Low Power Consumption: Designed to operate with low power, making it ideal for battery-powered devices.
5. Endurance and Data Retention: Provides high endurance with a typical 100,000 program/erase cycles and 20-year data retention.
Its robust performance and reliability make the M29W800DT70N6E a popular choice for developers looking for dependable non-volatile memory solutions.
Key features of the M29W800DT70N6E include:
1. Parallel Interface: Supports x8 or x16 parallel interface, allowing for flexible integration with microcontrollers and processors.
2. Sector Architecture: Features a sector-based architecture, enabling selective erasing and programming of memory blocks.
3. Fast Access Time: Offers a typical access time of 70 ns, suitable for high-speed applications.
4. Low Power Consumption: Designed to operate with low power, making it ideal for battery-powered devices.
5. Endurance and Data Retention: Provides high endurance with a typical 100,000 program/erase cycles and 20-year data retention.
Its robust performance and reliability make the M29W800DT70N6E a popular choice for developers looking for dependable non-volatile memory solutions.
Features
The M29W800DT70N6E is a 8-megabit (Mb) Flash memory device, specifically a 1 Megabyte (MB) NOR Flash memory. It features a uniform 64KB sector architecture, which allows for efficient storage management. Key features include:
1. Voltage Range: Operates at a 2.7V to 3.6V power supply, making it suitable for battery-powered applications.
2. Access Time: Provides a fast access time of 70 nanoseconds, enabling quick read operations.
3. Programming and Erasing: Supports command set compatibility with standard flash memory devices, allowing for simple integration. It can perform both word (16-bit) and byte (8-bit) programming.
4. Write Protection: Features a hardware reset pin and a Write Protect Pin to prevent accidental data corruption.
5. Sector Erase: Offers erase capability at the sector level, ensuring flexibility and efficiency in data management.
6. Temperature Range: Can operate in a wide temperature range, suitable for various environmental conditions.
7. Data Retention and Endurance: Guarantees data retention of 20 years and includes high endurance with a minimum of 100,000 program/erase cycles per sector.
These features make the M29W800DT70N6E ideal for embedded applications requiring reliable and flexible non-volatile storage.
1. Voltage Range: Operates at a 2.7V to 3.6V power supply, making it suitable for battery-powered applications.
2. Access Time: Provides a fast access time of 70 nanoseconds, enabling quick read operations.
3. Programming and Erasing: Supports command set compatibility with standard flash memory devices, allowing for simple integration. It can perform both word (16-bit) and byte (8-bit) programming.
4. Write Protection: Features a hardware reset pin and a Write Protect Pin to prevent accidental data corruption.
5. Sector Erase: Offers erase capability at the sector level, ensuring flexibility and efficiency in data management.
6. Temperature Range: Can operate in a wide temperature range, suitable for various environmental conditions.
7. Data Retention and Endurance: Guarantees data retention of 20 years and includes high endurance with a minimum of 100,000 program/erase cycles per sector.
These features make the M29W800DT70N6E ideal for embedded applications requiring reliable and flexible non-volatile storage.
Package
The M29W800DT70N6E is a memory chip packaged in a TSOP (Thin Small Outline Package) with 48 pins. TSOP packages are widely used for integrated circuits like flash memory due to their compact form factor, which is suitable for space-constrained applications.
Manufacturer
The M29W800DT70N6E is a flash memory product manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide range of products for various electronics applications. The company serves diverse markets, including automotive, industrial, personal electronics, and communications equipment. With a focus on innovation and sustainability, STMicroelectronics aims to provide solutions that help their customers make smarter, more efficient, and more eco-friendly products.
Application
The M29W800DT70N6E is a non-volatile flash memory chip used in various applications. Its primary use is in embedded systems, where it serves as storage for firmware, software, and system data. Common application areas include consumer electronics, automotive systems, telecommunications equipment, and industrial control systems. It is particularly useful in devices requiring reliable data storage with frequent read and write operations, such as set-top boxes, networking devices, and other digital systems needing robust and stable memory solutions.
Equivalent
The M29W800DT70N6E is an 8 Mb (1M x 8 or 512K x 16) Flash memory chip by STMicroelectronics. Equivalent products could include similar 8 Mb NOR Flash memory chips from manufacturers like Micron, Cypress (part of Infineon Technologies), or Winbond, featuring similar voltage levels, package types, and access times. Specific part numbers may vary, so it's important to compare technical specifications closely to ensure compatibility.
出荷
出荷方法私たち
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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