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M29W640GT70NA6E
IC FLASH 64MBIT PAR 48TSOP I
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- Mfr。パート #M29W640GT70NA6E
- パッケージ
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仕様
| Part Status | Obsolete |
| DigiKey Programmable | Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 64Mbit |
| Memory Organization | 8M x 8, 4M x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 70ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 48-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package | 48-TSOP I |
| Base Product Number | M29W640 |
| Access Time | 70 ns |
概要
Description
The M29W640GT70NA6E is a 64 Mbit (8 Mb x 8 or 4 Mb x 16) flash memory device from STMicroelectronics, designed for use in embedded systems and other applications requiring non-volatile storage. This device belongs to the NOR flash memory family and is known for its fast read speeds, high reliability, and low power consumption. It operates at 3V, making it suitable for battery-operated devices.
Key features include a 70ns access time, enabling quick data retrieval, and a flexible block architecture that allows for different block sizes, aiding efficient memory management. It supports a wide range of temperature variations, making it suitable for industrial applications. The device also features a built-in boot block, which is vital for system start-up routines.
The M29W640GT70NA6E supports multiple programming and erase cycles, maintaining data integrity and longevity. It is compatible with common microcontrollers and is used in applications such as networking equipment, automotive systems, and consumer electronics. The device is available in a variety of package options to accommodate different design requirements.
Key features include a 70ns access time, enabling quick data retrieval, and a flexible block architecture that allows for different block sizes, aiding efficient memory management. It supports a wide range of temperature variations, making it suitable for industrial applications. The device also features a built-in boot block, which is vital for system start-up routines.
The M29W640GT70NA6E supports multiple programming and erase cycles, maintaining data integrity and longevity. It is compatible with common microcontrollers and is used in applications such as networking equipment, automotive systems, and consumer electronics. The device is available in a variety of package options to accommodate different design requirements.
Features
The M29W640GT70NA6E is a 64 Mbit (8 Mb x 8 or 4 Mb x 16) flash memory device, typically used in embedded systems and digital electronics. Key features include:
1. Architecture: Organized as 8 Mb x 8 or 4 Mb x 16, this device provides flexibility in data management.
2. Voltage Range: Operates at a 2.7V to 3.6V single supply voltage, making it energy-efficient.
3. Access Time: Offers a fast access time of 70 ns, suitable for high-speed applications.
4. Sector Erase Architecture: Allows memory sectors to be erased and programmed independently, offering better control over data management.
5. Boot Blocks: Includes top and bottom boot block configurations, enhancing adaptability for different boot requirements.
6. Write Protect: Features a write protect pin to safeguard critical data against accidental overwrites.
7. Program/Erase Suspend: Allows read operations from another sector during the program or erase cycle, improving system performance.
8. Endurance and Data Retention: Guarantees 100,000 program/erase cycles per sector with data retention of 20 years.
9. Automated Programming Algorithm: Simplifies programming and erasing with embedded algorithms, reducing CPU overhead.
10. Package: Available in various package types to suit different design requirements.
These features make the M29W640GT70NA6E a versatile choice for a range of electronic applications.
1. Architecture: Organized as 8 Mb x 8 or 4 Mb x 16, this device provides flexibility in data management.
2. Voltage Range: Operates at a 2.7V to 3.6V single supply voltage, making it energy-efficient.
3. Access Time: Offers a fast access time of 70 ns, suitable for high-speed applications.
4. Sector Erase Architecture: Allows memory sectors to be erased and programmed independently, offering better control over data management.
5. Boot Blocks: Includes top and bottom boot block configurations, enhancing adaptability for different boot requirements.
6. Write Protect: Features a write protect pin to safeguard critical data against accidental overwrites.
7. Program/Erase Suspend: Allows read operations from another sector during the program or erase cycle, improving system performance.
8. Endurance and Data Retention: Guarantees 100,000 program/erase cycles per sector with data retention of 20 years.
9. Automated Programming Algorithm: Simplifies programming and erasing with embedded algorithms, reducing CPU overhead.
10. Package: Available in various package types to suit different design requirements.
These features make the M29W640GT70NA6E a versatile choice for a range of electronic applications.
Package
The M29W640GT70NA6E is a 64 Mbit (8 Mb x8 or 4 Mb x16) Flash memory device. It typically comes in a TSOP (Thin Small Outline Package) form factor, specifically a 48-pin TSOP package, which is common for such memory components.
Pinout
The M29W640GT70NA6E is a 64 Mbit (8 Megabyte) Flash memory device manufactured by Micron Technology. It features a 48-pin TSOP (Thin Small Outline Package) configuration. This Flash memory chip is used for storing data and code in a variety of electronic applications, offering fast access and high reliability.
Key functions of the M29W640GT70NA6E include:
1. Read/Write Operations: It supports both read and write operations, enabling data storage and retrieval.
2. Sector Erase: Allows for erasing specific sectors, which is useful for managing data updates efficiently.
3. Low Power Consumption: Designed to operate with low power, making it suitable for battery-powered devices.
4. Uniform Block Architecture: Consists of uniform blocks, providing flexibility in application design.
5. Fast Random Access Time: Ensures quick access to stored data, improving the performance of the host system.
Overall, the M29W640GT70NA6E is a versatile Flash memory device suited for a wide range of applications, including automotive, consumer electronics, and industrial systems.
Key functions of the M29W640GT70NA6E include:
1. Read/Write Operations: It supports both read and write operations, enabling data storage and retrieval.
2. Sector Erase: Allows for erasing specific sectors, which is useful for managing data updates efficiently.
3. Low Power Consumption: Designed to operate with low power, making it suitable for battery-powered devices.
4. Uniform Block Architecture: Consists of uniform blocks, providing flexibility in application design.
5. Fast Random Access Time: Ensures quick access to stored data, improving the performance of the host system.
Overall, the M29W640GT70NA6E is a versatile Flash memory device suited for a wide range of applications, including automotive, consumer electronics, and industrial systems.
Manufacturer
The M29W640GT70NA6E is a memory chip manufactured by Micron Technology, Inc. Micron is an American company that specializes in the production of semiconductor devices, primarily focusing on memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron is one of the largest memory manufacturers in the world. The company produces a range of products, including DRAM, NAND flash memory, and other types of semiconductor devices used in computers, consumer electronics, and mobile devices. Micron plays a significant role in the tech industry by providing essential components that power various digital products.
Application
The M29W640GT70NA6E is a 64 Mb (8 MB) NOR Flash memory device, commonly used in applications requiring reliable, non-volatile storage. Its primary application areas include embedded systems, consumer electronics, automotive electronics, industrial controls, and telecommunications equipment. It is ideal for storing firmware, boot code, configuration settings, and other critical data that needs to be retained without power. Its fast read speeds and robust data retention make it suitable for systems requiring frequent read operations and long-term data storage.
Equivalent
The M29W640GT70NA6E is a 64Mb (8MB) NOR Flash memory chip from STMicroelectronics. Equivalent products may include the AM29LV640MT from AMD/Spansion, the S29GL064N90TFI040 from Cypress/Spansion, and the W29GL064CT from Winbond. When looking for equivalents, ensure compatibility in terms of pin configuration, voltage requirements, and speed to match your application's specifications.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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