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M29W128GL70N6E
IC FLASH 128MBIT PARALLEL 56TSOP
- メーカー
- Mfr。パート #M29W128GL70N6E
- パッケージ
- データシート
- 在庫中4722
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仕様
| Part Status | Obsolete |
| Base Product Number | M29W128 |
| DigiKey Programmable | Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 128Mbit |
| Memory Organization | 16M x 8, 8M x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 70ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package | 56-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package | 56-TSOP |
| Packaging | Tray |
| Access Time | 70 ns |
概要
Description
The M29W128GL70N6E is a 128 Mb (16 MB) flash memory chip produced by STMicroelectronics, designed for a variety of applications including consumer electronics, automotive systems, and industrial devices. It features a dual-bank architecture that allows for simultaneous read and program operations, enhancing performance in multitasking environments.
Key specifications include:
- Type: NAND Flash Memory
- Voltage Supply: Operates typically at 2.7V to 3.6V
- Access Time: Up to 70 ns for random reads
- Interface: Parallel interface supporting common flash memory command sets
- Endurance: Up to 100,000 program/erase cycles
- Data Retention: Typically up to 20 years
The chip is suitable for firmware storage, data logging, and other applications requiring reliable, non-volatile memory. Its compact size and efficient power consumption make it a versatile choice for modern electronics.
Key specifications include:
- Type: NAND Flash Memory
- Voltage Supply: Operates typically at 2.7V to 3.6V
- Access Time: Up to 70 ns for random reads
- Interface: Parallel interface supporting common flash memory command sets
- Endurance: Up to 100,000 program/erase cycles
- Data Retention: Typically up to 20 years
The chip is suitable for firmware storage, data logging, and other applications requiring reliable, non-volatile memory. Its compact size and efficient power consumption make it a versatile choice for modern electronics.
Features
The M29W128GL70N6E is a 128 Mbit (16 Mbyte) flash memory device, primarily used for non-volatile storage in various applications. Its key features include:
1. Architecture: It employs a NAND flash architecture which provides high density and reliability.
2. Interface: Compatible with a standard NAND interface for easy integration into systems.
3. Speed: Offers a maximum read speed of 70 ns, suitable for high-performance applications.
4. Endurance: Supports up to 100,000 program/erase cycles, ensuring longevity and durability.
5. Data Retention: Maintains data for up to 20 years under typical conditions, safeguarding stored information.
6. Package: Available in a compact 48-ball FBGA package, optimizing space in electronic designs.
7. Low Power Consumption: Designed for efficient power usage, making it ideal for battery-operated devices.
8. Programming: Features sector-based programming, allowing for flexible data management.
These attributes make the M29W128GL70N6E suitable for applications in consumer electronics, automotive systems, and industrial controls.
1. Architecture: It employs a NAND flash architecture which provides high density and reliability.
2. Interface: Compatible with a standard NAND interface for easy integration into systems.
3. Speed: Offers a maximum read speed of 70 ns, suitable for high-performance applications.
4. Endurance: Supports up to 100,000 program/erase cycles, ensuring longevity and durability.
5. Data Retention: Maintains data for up to 20 years under typical conditions, safeguarding stored information.
6. Package: Available in a compact 48-ball FBGA package, optimizing space in electronic designs.
7. Low Power Consumption: Designed for efficient power usage, making it ideal for battery-operated devices.
8. Programming: Features sector-based programming, allowing for flexible data management.
These attributes make the M29W128GL70N6E suitable for applications in consumer electronics, automotive systems, and industrial controls.
Package
The M29W128GL70N6E is packaged in a TSOP (Thin Small Outline Package) type. It typically features a 48-pin configuration, providing a compact and efficient form factor for integrated circuits in various electronic applications.
Pinout
The M29W128GL70N6E is a 128 Mbit (16 Mbyte) NAND Flash memory device with a total of 48 pins. Its primary function is to provide non-volatile storage for data, commonly used in applications such as consumer electronics, automotive, and industrial systems.
Key pin functions include:
- Address Pins (A0-A16): These pins are used to select memory locations.
- Data Pins (D0-D7): These are bi-directional data pins for input and output.
- Control Pins:
- CE (Chip Enable): Activates the chip.
- WE (Write Enable): Enables writing to the memory.
- RE (Read Enable): Enables reading from the memory.
- WP (Write Protect): Protects the memory from unintentional writes.
- VCC: Power supply.
- GND: Ground connection.
- DQ: Data input/output for data transactions.
The device supports multiple programming and erase modes, making it versatile for various applications.
Key pin functions include:
- Address Pins (A0-A16): These pins are used to select memory locations.
- Data Pins (D0-D7): These are bi-directional data pins for input and output.
- Control Pins:
- CE (Chip Enable): Activates the chip.
- WE (Write Enable): Enables writing to the memory.
- RE (Read Enable): Enables reading from the memory.
- WP (Write Protect): Protects the memory from unintentional writes.
- VCC: Power supply.
- GND: Ground connection.
- DQ: Data input/output for data transactions.
The device supports multiple programming and erase modes, making it versatile for various applications.
Manufacturer
The manufacturer of the M29W128GL70N6E is Micron Technology, Inc. Micron is a global leader in memory and storage solutions, specializing in DRAM, NAND flash memory, and other memory technologies. Founded in 1978 and headquartered in Boise, Idaho, Micron serves various sectors, including consumer electronics, computing, and mobile devices. The company focuses on innovation in memory production and is known for its high-performance products that support data-intensive applications. Micron is publicly traded on the NASDAQ under the ticker symbol MU and is recognized for its commitment to quality and sustainability in the semiconductor industry.
Application
The M29W128GL70N6E is a 128Mb (16MB) Flash memory device commonly used in applications such as embedded systems, consumer electronics, automotive electronics, and telecommunications. Its non-volatile storage capabilities make it suitable for firmware storage, data logging, industrial control systems, and portable devices requiring reliable memory solutions.
Equivalent
The M29W128GL70N6E is a 128 Mb (16MB) NOR Flash memory chip. Equivalent products include the Micron MT28EW128ABA1, Spansion S29GL128N, and Atmel AT49BV128. Ensure compatibility in terms of voltage, pin configuration, and read/write speeds when considering alternatives.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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