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M29F800FB5AN6E2
IC FLASH 8MBIT PARALLEL 48TSOP I
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- Mfr。パート #M29F800FB5AN6E2
- パッケージ
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- 在庫中5668
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仕様
| Part Status | Active |
| Base Product Number | M29F800 |
| DigiKey Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 8Mbit |
| Memory Organization | 1M x 8, 512K x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 55ns |
| Voltage - Supply | 4.5V ~ 5.5V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package | 48-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package | 48-TSOP I |
| Packaging | Tray |
| Access Time | 55 ns |
| Grade | Automotive |
| Qualification | AEC-Q100 |
概要
Description
The M29F800FB5AN6E2 is a high-performance, 8-megabit (1 MB) flash memory chip made by STMicroelectronics. It is part of the M29F series, which features a single power supply operation and is designed for a variety of applications, including consumer electronics, automotive systems, and industrial devices.
Key specifications include:
- Architecture: It uses a NAND flash memory structure, allowing for efficient storage and retrieval of data.
- Operating Voltage: Typically operates at 3.0 to 3.6 volts.
- Access Times: Provides fast read access times, making it suitable for applications requiring quick data retrieval.
- Data Retention: Offers a long data retention span of up to 20 years, ensuring data integrity over time.
- Interface: It utilizes a standard parallel interface for ease of integration into various systems.
Overall, the M29F800FB5AN6E2 is a versatile and reliable option for applications that require non-volatile memory solutions.
Key specifications include:
- Architecture: It uses a NAND flash memory structure, allowing for efficient storage and retrieval of data.
- Operating Voltage: Typically operates at 3.0 to 3.6 volts.
- Access Times: Provides fast read access times, making it suitable for applications requiring quick data retrieval.
- Data Retention: Offers a long data retention span of up to 20 years, ensuring data integrity over time.
- Interface: It utilizes a standard parallel interface for ease of integration into various systems.
Overall, the M29F800FB5AN6E2 is a versatile and reliable option for applications that require non-volatile memory solutions.
Features
The M29F800FB5AN6E2 is an 8 Mb (megabit) flash memory device featuring Electrically Erasable Programmable Read-Only Memory (EEPROM) technology. Key features include:
1. Storage Capacity: 8Mb, organized as 1,048,576 x 8 bits.
2. Interface: Parallel interface for easy integration with various microcontrollers and processors.
3. Performance: Fast read access time of up to 70 ns, enabling efficient data retrieval.
4. Programming Time: Typically requires around 10 ms per word.
5. Endurance: Offers up to 100,000 write/erase cycles per sector.
6. Data Retention: Guaranteed data retention for up to 20 years under specified conditions.
7. Flexible Architecture: Supports bulk erase and sector erase modes, allowing for efficient memory management.
8. Low Power Consumption: Designed for low power operation, making it suitable for battery-powered applications.
9. Compatibility: Available in various packages and voltages, enhancing compatibility with different systems.
This device is ideal for applications requiring reliable non-volatile memory storage, such as in embedded systems and consumer electronics.
1. Storage Capacity: 8Mb, organized as 1,048,576 x 8 bits.
2. Interface: Parallel interface for easy integration with various microcontrollers and processors.
3. Performance: Fast read access time of up to 70 ns, enabling efficient data retrieval.
4. Programming Time: Typically requires around 10 ms per word.
5. Endurance: Offers up to 100,000 write/erase cycles per sector.
6. Data Retention: Guaranteed data retention for up to 20 years under specified conditions.
7. Flexible Architecture: Supports bulk erase and sector erase modes, allowing for efficient memory management.
8. Low Power Consumption: Designed for low power operation, making it suitable for battery-powered applications.
9. Compatibility: Available in various packages and voltages, enhancing compatibility with different systems.
This device is ideal for applications requiring reliable non-volatile memory storage, such as in embedded systems and consumer electronics.
Package
The M29F800FB5AN6E2 is packaged in a TSOP (Thin Small Outline Package) type, specifically a 48-lead TSOP. This package type is designed for surface mounting on PCBs, providing a compact footprint suitable for memory applications.
Pinout
The M29F800FB5AN6E2 is an 8-megabit (1 MB) flash memory chip that comes in a 48-pin TSOP (Thin Small Outline Package) form factor. Its primary function is to provide non-volatile storage, allowing data to be retained even when power is removed.
The pinout includes the following key functions:
- Address Inputs (A0-A18): Used to select memory addresses.
- Data Inputs/Outputs (D0-D7): Serve as the data bus for reading and writing operations.
- Control Pins:
- Chip Enable (CE): Activates the chip for read or write operations.
- Output Enable (OE): Controls output data during read operations.
- Write Enable (WE): Enables write operations.
- Ready/Busy (RY/BY): Indicates the status of the memory operation.
- VCC: Power supply.
- GND: Ground connection.
This chip is commonly utilized in applications requiring firmware storage and data retention.
The pinout includes the following key functions:
- Address Inputs (A0-A18): Used to select memory addresses.
- Data Inputs/Outputs (D0-D7): Serve as the data bus for reading and writing operations.
- Control Pins:
- Chip Enable (CE): Activates the chip for read or write operations.
- Output Enable (OE): Controls output data during read operations.
- Write Enable (WE): Enables write operations.
- Ready/Busy (RY/BY): Indicates the status of the memory operation.
- VCC: Power supply.
- GND: Ground connection.
This chip is commonly utilized in applications requiring firmware storage and data retention.
Manufacturer
The M29F800FB5AN6E2 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is known for designing and manufacturing a wide range of electronic components, including microcontrollers, memory devices, and various analog and digital integrated circuits. Established in 1987, the company operates in various sectors, including automotive, industrial, personal electronics, and communications. It is recognized for its innovation in technology and commitment to sustainability, contributing significantly to advancements in the electronics industry.
Application
The M29F800FB5AN6E2 is a flash memory device primarily used in applications such as embedded systems, automotive electronics, consumer electronics, and industrial automation. It serves for firmware storage, data logging, and code execution in devices like routers, cameras, and various IoT devices where reliable non-volatile memory is essential.
Equivalent
The M29F800FB5AN6E2 is an 8 megabit (1 MB) Flash memory chip. Equivalent products include the AMD Am29F800BT, Intel 28F800B, and STMicroelectronics M29F800BT. These chips share similar specifications, such as memory density and electrical characteristics, making them suitable substitutes in various applications. Always verify pin compatibility and electrical specifications before replacement.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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