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M12L16161A-7TG2Q
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- Mfr。パート #M12L16161A-7TG2Q
- パッケージ
- データシート M12L16161A-7TG2Q DataSheet
- 在庫中28839
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仕様
| Manufacturer | ESMT(Elite Semicon Memory Tech) |
| Package | TSOP-50-10.0mm |
概要
Description
The M12L16161A-7TG2Q is a high-performance, low-power dynamic random-access memory (DRAM) chip. This device is part of the 16M x 16 DRAM family, offering a storage capacity of 16 megabits organized in a 16-bit wide data bus. It typically operates with a voltage range of 2.5V, ensuring compatibility with modern digital systems while enhancing energy efficiency.
Key features include fast access times, often around 70 ns, and support for various operating modes, including burst read/write operations, which optimize data throughput. The chip is suitable for applications in consumer electronics, telecommunications, and automotive systems where high-speed data access is required.
The "TG" in its part number signifies a specific package type, and "Q" indicates that it is a lead-free version, adhering to environmental standards such as RoHS. Overall, the M12L16161A-7TG2Q is designed to provide reliable performance in memory-intensive applications while minimizing power consumption.
Key features include fast access times, often around 70 ns, and support for various operating modes, including burst read/write operations, which optimize data throughput. The chip is suitable for applications in consumer electronics, telecommunications, and automotive systems where high-speed data access is required.
The "TG" in its part number signifies a specific package type, and "Q" indicates that it is a lead-free version, adhering to environmental standards such as RoHS. Overall, the M12L16161A-7TG2Q is designed to provide reliable performance in memory-intensive applications while minimizing power consumption.
Features
The M12L16161A-7TG2Q is a 16 Meg x 16-bit Dynamic Random Access Memory (DRAM) device. It features:
1. Memory Configuration: 16 Megabit (2M x 8) organization, allowing efficient data storage.
2. Access Speed: Fast access time of 7 ns, suitable for high-performance applications.
3. Operating Voltage: Typically operates at 3.3V, ensuring compatibility with modern low-voltage systems.
4. Refresh: Supports both RAS (Row Address Strobe) and CAS (Column Address Strobe) refreshing methods to maintain data integrity.
5. Packaged in TSOP: Available in a Thin Small Outline Package (TSOP), which provides a compact form factor ideal for space-constrained applications.
6. Compatibility: Compatible with standard DRAM interfaces, making it easy to integrate into various electronic designs.
7. Low Power Consumption: Designed for efficient power usage, making it suitable for battery-operated devices.
These features make the M12L16161A-7TG2Q a reliable choice for consumer electronics, networking, and other applications requiring efficient memory solutions.
1. Memory Configuration: 16 Megabit (2M x 8) organization, allowing efficient data storage.
2. Access Speed: Fast access time of 7 ns, suitable for high-performance applications.
3. Operating Voltage: Typically operates at 3.3V, ensuring compatibility with modern low-voltage systems.
4. Refresh: Supports both RAS (Row Address Strobe) and CAS (Column Address Strobe) refreshing methods to maintain data integrity.
5. Packaged in TSOP: Available in a Thin Small Outline Package (TSOP), which provides a compact form factor ideal for space-constrained applications.
6. Compatibility: Compatible with standard DRAM interfaces, making it easy to integrate into various electronic designs.
7. Low Power Consumption: Designed for efficient power usage, making it suitable for battery-operated devices.
These features make the M12L16161A-7TG2Q a reliable choice for consumer electronics, networking, and other applications requiring efficient memory solutions.
Package
The M12L16161A-7TG2Q is packaged in a TSOP (Thin Small Outline Package) type. This package is designed for surface mounting and is commonly used for memory devices like DRAM.
Pinout
The M12L16161A-7TG2Q is a 16Mb synchronous dynamic random-access memory (SDRAM) chip. It has a pin count of 54 pins.
The primary functions of the pins include:
- Data Inputs/Outputs (DQ0-DQ15): These are used for data transfer.
- Address Inputs (A0-A11): These specify the address of the data being accessed.
- Control Inputs (CK, CK#, CE#, WE#, and OE#): These control the operation of the memory, including clock signals and read/write operations.
- Bank Select Inputs (BA0, BA1): These select the bank of memory being accessed.
- Power and Ground Pins (VDD, VSS): These provide power to the chip and ground connection.
This device operates in a synchronous mode and is designed for high-speed applications.
The primary functions of the pins include:
- Data Inputs/Outputs (DQ0-DQ15): These are used for data transfer.
- Address Inputs (A0-A11): These specify the address of the data being accessed.
- Control Inputs (CK, CK#, CE#, WE#, and OE#): These control the operation of the memory, including clock signals and read/write operations.
- Bank Select Inputs (BA0, BA1): These select the bank of memory being accessed.
- Power and Ground Pins (VDD, VSS): These provide power to the chip and ground connection.
This device operates in a synchronous mode and is designed for high-speed applications.
Manufacturer
The M12L16161A-7TG2Q is manufactured by Micron Technology, Inc., a global leader in the semiconductor industry. Micron is primarily known for producing memory and storage solutions, including DRAM, NAND flash memory, and other advanced memory technologies. Founded in 1978 and headquartered in Boise, Idaho, Micron serves various markets such as computing, mobile devices, automotive, and industrial applications. The company's products are essential for devices ranging from smartphones and laptops to servers and data centers. As a prominent player in the memory market, Micron focuses on innovation and technological advancement to meet the growing demands for higher performance and storage capacity in today’s digital landscape.
Application
The M12L16161A-7TG2Q is a 16-Mbit dynamic random-access memory (DRAM) chip, primarily used in applications such as consumer electronics, mobile devices, and computing systems. It serves in buffering and data storage for portable devices, digital cameras, and gaming consoles, where high-speed data access and efficient memory management are essential. Additionally, it may be utilized in networking equipment and industrial applications requiring reliable memory performance.
Equivalent
The M12L16161A-7TG2Q is a 16Mb DDR SDRAM chip. Equivalent products include the M12L16161A-7TG2, MT48LC16M16A2P-75, and IS42S16800F-7B. When searching for equivalents, consider operational voltage, timing specifications, and package type to ensure compatibility. Always verify with datasheets for precise matches.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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