画像は参照用のみです。
LTC4449IDCB
IC GATE DRVR HALF-BRIDGE 8DFN
- メーカー
- Mfr。パート #LTC4449IDCB
- パッケージ 8-WFDFN Exposed Pad
- データシート
- 在庫中7184
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Package | Tube |
| ProductStatus | Obsolete |
| DrivenConfiguration | Half-Bridge |
| ChannelType | Synchronous |
| NumberofDrivers | 2 |
| GateType | N-Channel MOSFET |
| Voltage-Supply | 4V ~ 6.5V |
| LogicVoltage-VILVIH | 3V, 6.5V |
| Current-PeakOutput(SourceSink) | 3.2A, 4.5A |
| InputType | Non-Inverting |
| HighSideVoltage-Max(Bootstrap) | 42 V |
| Rise/FallTime(Typ) | 8ns, 7ns |
| OperatingTemperature | -40°C ~ 125°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-WFDFN Exposed Pad |
概要
Description
The LTC4449IDCB is a high-speed, high-input voltage gate driver designed by Analog Devices (formerly Linear Technology). It is primarily used to drive N-channel MOSFETs in synchronous rectifier applications, such as DC/DC converters. The device can handle input voltages up to 38V and features a robust design that includes a 6A peak pull-up and pull-down drive capability to ensure fast switching.
The LTC4449IDCB offers low propagation delay and fast rise and fall times, enhancing the efficiency of power conversion systems by minimizing transition losses. It includes an undervoltage lockout feature to prevent faulty operation at low supply voltages and an adaptive shoot-through protection mechanism to prevent simultaneous conduction of the high-side and low-side MOSFETs, which could lead to short circuits.
Packaged in a thermally enhanced DFN package, the LTC4449IDCB is suitable for applications requiring efficient power management with reliable performance in a compact form. It is ideal for use in applications such as telecom power supplies, industrial power systems, and high-efficiency converters.
The LTC4449IDCB offers low propagation delay and fast rise and fall times, enhancing the efficiency of power conversion systems by minimizing transition losses. It includes an undervoltage lockout feature to prevent faulty operation at low supply voltages and an adaptive shoot-through protection mechanism to prevent simultaneous conduction of the high-side and low-side MOSFETs, which could lead to short circuits.
Packaged in a thermally enhanced DFN package, the LTC4449IDCB is suitable for applications requiring efficient power management with reliable performance in a compact form. It is ideal for use in applications such as telecom power supplies, industrial power systems, and high-efficiency converters.
Features
The LTC4449IDCB is a high-speed N-channel MOSFET driver designed to drive upper and lower power N-channel MOSFETs in a synchronous DC/DC converter. Key features include:
1. Gate Drive Voltage: It offers a strong drive capability with a 7.2V gate drive voltage, which is optimal for fast switching applications.
2. Fast Turn-On/Off Times: The device provides rapid turn-on and turn-off times, enhancing overall efficiency and minimizing transition losses.
3. Wide Input Voltage Range: It supports a wide input voltage range from 4.5V to 38V, allowing flexibility in various applications.
4. High Frequency Operation: Capable of operating at high frequencies up to 1MHz, which is suitable for compact and efficient designs.
5. Adaptive Shoot-Through Protection: The device includes adaptive shoot-through protection, preventing simultaneous conduction of the upper and lower MOSFETs and thus protecting the circuit.
6. Compact Package: It comes in a compact 8-lead DFN package, making it suitable for space-constrained applications.
These features make the LTC4449IDCB a versatile and efficient choice for driving MOSFETs in demanding power management applications.
1. Gate Drive Voltage: It offers a strong drive capability with a 7.2V gate drive voltage, which is optimal for fast switching applications.
2. Fast Turn-On/Off Times: The device provides rapid turn-on and turn-off times, enhancing overall efficiency and minimizing transition losses.
3. Wide Input Voltage Range: It supports a wide input voltage range from 4.5V to 38V, allowing flexibility in various applications.
4. High Frequency Operation: Capable of operating at high frequencies up to 1MHz, which is suitable for compact and efficient designs.
5. Adaptive Shoot-Through Protection: The device includes adaptive shoot-through protection, preventing simultaneous conduction of the upper and lower MOSFETs and thus protecting the circuit.
6. Compact Package: It comes in a compact 8-lead DFN package, making it suitable for space-constrained applications.
These features make the LTC4449IDCB a versatile and efficient choice for driving MOSFETs in demanding power management applications.
Package
The LTC4449IDCB is a high-speed synchronous N-channel MOSFET driver. It is typically available in a 3mm × 3mm DFN (Dual Flat No-leads) package. This compact package is designed to provide efficient thermal performance and is suitable for surface-mount applications.
Pinout
The LTC4449IDCB is a high-speed, high-input voltage-capable MOSFET driver manufactured by Analog Devices. It is designed to drive upper and lower N-channel MOSFETs in a synchronous DC/DC converter configuration. The device comes in a 3mm × 3mm DFN package with a 10-pin configuration.
Key pins and their functions include:
1. PVCC: Supply voltage for the driver.
2. BOOST: Bootstrapped gate drive supply for the high-side MOSFET.
3. TG: High-side gate drive output.
4. SW: Switch node, connected to the source of the high-side MOSFET.
5. BG: Low-side gate drive output.
6. GND: Ground reference for the driver.
7. IN: Input signal to control the driver.
8. VCC: Internal LDO output for the driver logic.
9. DIS: Shutdown pin for placing the driver into low power mode.
10. FAULT: Indicates fault conditions.
These functions support efficient operation of synchronous step-down converters by providing necessary gate drive voltages and protecting against fault conditions.
Key pins and their functions include:
1. PVCC: Supply voltage for the driver.
2. BOOST: Bootstrapped gate drive supply for the high-side MOSFET.
3. TG: High-side gate drive output.
4. SW: Switch node, connected to the source of the high-side MOSFET.
5. BG: Low-side gate drive output.
6. GND: Ground reference for the driver.
7. IN: Input signal to control the driver.
8. VCC: Internal LDO output for the driver logic.
9. DIS: Shutdown pin for placing the driver into low power mode.
10. FAULT: Indicates fault conditions.
These functions support efficient operation of synchronous step-down converters by providing necessary gate drive voltages and protecting against fault conditions.
Manufacturer
The LTC4449IDCB is manufactured by Analog Devices, Inc. Analog Devices is a global semiconductor company that specializes in the design and manufacturing of analog, mixed-signal, and digital signal processing integrated circuits used in a wide range of electronic equipment. The company's products are used in various industries, including communications, healthcare, automotive, industrial, and consumer electronics.
Application
The LTC4449IDCB is a high-speed, high-voltage MOSFET driver designed for applications requiring efficient switching of power MOSFETs. It is commonly used in high-frequency DC/DC converters, power supplies, motor control, and renewable energy systems. The driver is suitable for synchronous rectification, providing fast switching and reduced power losses in high-performance power electronics applications. Its ability to handle high input voltages and deliver strong gate drive currents makes it ideal for industrial, automotive, and telecommunications applications, where robust performance and efficiency are critical.
Equivalent
The LTC4449IDCB is a high-speed, high-voltage gate driver. Equivalent products may include the following: TI's UCC27714, Infineon's 1ED44175N01B, ON Semiconductor's NCP81074, and Microchip's MCP14700. When selecting an equivalent, it's essential to compare specifications such as voltage ratings, drive current, and switching frequency to ensure compatibility with your application.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
類似
-
MX25L3233FM1I-08Q
Macronix
-
MX66U1G45GXDI00
Macronix
-
MX25V4035FZUI
Macronix
-
MX25V2033FM1I
Macronix
-
MX25V16066M1I02
Macronix
-
MX25R3235FZNIL0
Macronix
-
MX25V1635FM2I
Macronix
-
MX25U6435FM2I-10G
Macronix
-
MX25L12833FM2I-10..
Macronix
-
MX25L12833FZNI-10..
Macronix
-
MX29F800CBTI-70G
Macronix
-
MX25L25735FMI-10G
Macronix