LND150N8-G

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LND150N8-G

MOSFET N-CH 500V 30MA SOT89-3

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  • Mfr。パート #LND150N8-G
  • パッケージ TO-243AA
  • データシート
  • 在庫中3069

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仕様

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 500 V
Current-ContinuousDrain(Id)@25°C 30mA (Tj)
DriveVoltage(MaxRdsOnMinRdsOn) 0V
RdsOn(Max)@IdVgs 1000Ohm @ 500µA, 0V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 10 pF @ 25 V
FETFeature Depletion Mode
PowerDissipation(Max) 1.6W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-89-3

概要

Description

The LND150N8-G is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various power management applications. It features a low on-resistance (R_DS(on)), which minimizes power loss during operation, making it suitable for efficient switching applications in power supplies, motor drivers, and LED lighting.
With a maximum drain-source voltage (V_DS) rating of 150V and a continuous drain current (I_D) of 10A, the LND150N8-G is capable of handling significant electrical loads. Its fast switching speed enhances performance in pulse-width modulation (PWM) and other high-frequency applications.
Designed for ease of integration, it comes in a compact surface-mount package, allowing for efficient thermal management and PCB space savings. The LND150N8-G is particularly valued in automotive, industrial, and consumer electronics sectors for its reliability and efficiency.
For optimal performance, it's crucial to consider thermal management and gate drive requirements in circuit designs.

Features

The LND150N8-G is a high-performance N-channel MOSFET primarily used in power management applications. Key features include:
1. Low On-Resistance (Rds(on)): Typically around 150 mΩ, which minimizes power loss and heat generation during operation.
2. High Voltage Rating: Can handle drain-source voltages up to 80V, making it suitable for various applications.
3. High Current Capability: Supports continuous drain currents up to 50A, ideal for high-power applications.
4. Fast Switching Speed: Facilitates efficient operation in switching applications, enhancing overall system performance.
5. Thermal Performance: Designed for improved thermal dissipation, which enhances reliability in demanding environments.
6. Package Type: Available in a TO-220 package, allowing for easy heatsinking and efficient thermal management.
These features make the LND150N8-G suitable for use in power supplies, motor drives, and other high-efficiency applications.

Package

The LND150N8-G is packaged in a TO-220 form factor. This type of package is commonly used for power transistors and provides good heat dissipation along with ease of handling and mounting.

Pinout

The LND150N8-G is a low-voltage N-channel MOSFET with a pin count of 8. It is designed primarily for switching applications. The key functions of its pins are as follows:
1. Gate (G) - Pin 1: Controls the MOSFET's switching on/off.
2. Drain (D) - Pin 2: The output where the load is connected; current flows from drain to source when the MOSFET is on.
3. Source (S) - Pin 3: The terminal through which current exits the MOSFET to ground or the negative side of the load.
4. Gate (G) - Pin 4: Another gate connection (optional for layout).
5. Drain (D) - Pin 5: Another drain connection (optional for layout).
6. Source (S) - Pin 6: Another source connection (optional for layout).
7. Drain (D) - Pin 7: Additional drain connection for high current applications.
8. Source (S) - Pin 8: Additional source connection for enhanced thermal performance.
This configuration allows for flexibility in layout and improved thermal management in applications.

Manufacturer

The LND150N8-G is manufactured by LND Incorporated, a company specializing in the production of radiation detection and measurement devices. LND is known for its expertise in designing and manufacturing Geiger-Müller counters, scintillation detectors, and other related products for various applications, including medical, industrial, and research uses. Founded in 1962, LND has established a reputation for producing reliable and high-quality radiation detection equipment, serving both governmental and commercial markets.

Application

The LND150N8-G is a low-voltage N-channel MOSFET suitable for various applications, including power management, switching regulators, and motor drivers. It can be used in consumer electronics, automotive systems, battery management, and LED drivers, providing efficient switching and low on-resistance for improved performance in compact circuits.

Equivalent

The LND150N8-G is a low-power N-channel MOSFET. Equivalent products include BSS138, 2N7000, and BS170. These alternatives can vary in specifications like voltage rating and current capacity, so it's important to check the datasheet for compatibility in your specific application.

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出荷料参照(DHL/FedEx):

DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。

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