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LMBT5551LT1G
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- Mfr。パート #LMBT5551LT1G
- パッケージ
- データシート
- 在庫中12909
100% オリジナル &新しい
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365日の保証
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仕様
概要
Description
The LMBT5551LT1G is a high-performance NPN transistor designed for various applications, including amplifiers and switching circuits. It is part of the LMBT series and features a low saturation voltage, making it suitable for low-power applications. The device typically comes in a compact SOT-23 package, offering space efficiency for modern electronics.
Key specifications include a maximum collector current of 600 mA and a collector-emitter voltage rating of 45 V. The transistor exhibits fast switching speeds, making it ideal for high-frequency applications. Its low noise figure and good thermal stability enhance its performance in audio and RF applications.
The "LT1G" suffix indicates that the transistor is supplied in a lead-free version, adhering to RoHS standards for environmentally friendly electronics. Overall, the LMBT5551LT1G is a versatile component for designers seeking reliable performance in a small form factor.
Key specifications include a maximum collector current of 600 mA and a collector-emitter voltage rating of 45 V. The transistor exhibits fast switching speeds, making it ideal for high-frequency applications. Its low noise figure and good thermal stability enhance its performance in audio and RF applications.
The "LT1G" suffix indicates that the transistor is supplied in a lead-free version, adhering to RoHS standards for environmentally friendly electronics. Overall, the LMBT5551LT1G is a versatile component for designers seeking reliable performance in a small form factor.
Features
The LMBT5551LT1G is a low-power NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Key features include:
1. Package Type: SOT-23, a compact surface-mount package suitable for space-constrained applications.
2. Voltage Rating: Maximum collector-emitter voltage (Vce) of 45V, allowing for versatile circuit applications.
3. Current Rating: Continuous collector current (Ic) of up to 600mA, making it suitable for driving loads.
4. Gain: High current gain (hFE) ranging from 100 to 600, enhancing its effectiveness in amplification.
5. Frequency: Transition frequency (fT) of up to 300 MHz, supporting high-speed switching applications.
6. Temperature Range: Operating junction temperature range from -55°C to +150°C, ensuring reliability in various environments.
7. Applications: Ideal for low-power switching, amplifiers, and digital circuits in consumer electronics, automotive, and industrial applications.
This transistor's robust specifications make it a popular choice among designers for a wide variety of electronic circuits.
1. Package Type: SOT-23, a compact surface-mount package suitable for space-constrained applications.
2. Voltage Rating: Maximum collector-emitter voltage (Vce) of 45V, allowing for versatile circuit applications.
3. Current Rating: Continuous collector current (Ic) of up to 600mA, making it suitable for driving loads.
4. Gain: High current gain (hFE) ranging from 100 to 600, enhancing its effectiveness in amplification.
5. Frequency: Transition frequency (fT) of up to 300 MHz, supporting high-speed switching applications.
6. Temperature Range: Operating junction temperature range from -55°C to +150°C, ensuring reliability in various environments.
7. Applications: Ideal for low-power switching, amplifiers, and digital circuits in consumer electronics, automotive, and industrial applications.
This transistor's robust specifications make it a popular choice among designers for a wide variety of electronic circuits.
Package
The LMBT5551LT1G is packaged in a SOT-23-3 format, which is a small, surface-mount package with three leads. This package type is commonly used for compact electronic applications due to its size and ease of integration.
Pinout
The LMBT5551LT1G is a NPN bipolar junction transistor (BJT) housed in a SOT-23 package, which features a 3-pin configuration. The pin count is three. The functions of the pins are as follows:
1. Emitter (E): This is the pin where the current exits the transistor. It is typically connected to ground in common-emitter configurations.
2. Base (B): This pin controls the transistor's operation. By applying a small current to the base, the transistor allows a larger current to flow from collector to emitter.
3. Collector (C): This is the pin where the current enters the transistor. It is connected to the load or circuit that the transistor is switching or amplifying.
The LMBT5551LT1G is commonly used in switching and amplification applications.
1. Emitter (E): This is the pin where the current exits the transistor. It is typically connected to ground in common-emitter configurations.
2. Base (B): This pin controls the transistor's operation. By applying a small current to the base, the transistor allows a larger current to flow from collector to emitter.
3. Collector (C): This is the pin where the current enters the transistor. It is connected to the load or circuit that the transistor is switching or amplifying.
The LMBT5551LT1G is commonly used in switching and amplification applications.
Manufacturer
The LMBT5551LT1G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor components, including analog, discrete, and power management devices. The company serves various industries, including automotive, industrial, consumer electronics, and communications. ON Semiconductor is known for its focus on energy-efficient solutions and innovative technologies that enhance performance and reduce power consumption in electronic devices.
Application
The LMBT5551LT1G is a general-purpose NPN transistor used in various applications such as audio amplifiers, switching circuits, signal processing, and low-frequency oscillators. It is suitable for use in consumer electronics, automotive systems, and industrial automation, providing efficient amplification and switching capabilities in compact designs.
Equivalent
The LMBT5551LT1G is a NPN transistor. Equivalent products include the 2N3904, BC547, and MPS2222. These transistors are commonly used for similar applications, but ensure to check specifications like voltage, current ratings, and package types for compatibility.
出荷
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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