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LM5112SD

Name: LM5112SD
Rating: 4.7 (12 reviews)

IC GATE DRVR LOW-SIDE 6WSON

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Mfr。パート #LM5112SD
パッケージ WSON-6
データシート
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仕様

Package	Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus	Not For New Designs
DrivenConfiguration	Low-Side
ChannelType	Single
NumberofDrivers	1
GateType	N-Channel MOSFET
Voltage-Supply	3.5V ~ 14V
LogicVoltage-VILVIH	0.8V, 2.3V
Current-PeakOutput(SourceSink)	3A, 7A
InputType	Inverting, Non-Inverting
Rise/FallTime(Typ)	14ns, 12ns
OperatingTemperature	-40°C ~ 125°C (TJ)
MountingType	Surface Mount
Package/Case	6-WDFN Exposed Pad

概要

Description

LM5112SD is Texas Instruments’ dual MOSFET gate-driver IC used to drive a high-side and a low-side N-channel MOSFET in a half-bridge. It uses a bootstrap scheme to power the high-side gate, enabling drive above the switch node. The inputs are TTL/CMOS-compatible and drive two fast, high-current outputs to achieve fast switching. Protective features typically include undervoltage lockout on both channels and overcurrent/thermal protection to guard against fault conditions. Applications include synchronous buck/boost converters, motor-drive bridges, and class-D stages where a floating high-side gate drive is needed. External components include a bootstrap capacitor between VB and VS, plus proper VCC decoupling and layout to minimize parasitics. The “SD” suffix denotes the packaging option (TI’s SD variant, e.g., SOIC-8 or similar).

Features

Here are the typical features of the LM5112SD (gate-driver for half-bridge):
- Dual high-side and low-side MOSFET gate drivers for half-bridge configurations
- Bootstrap supply to drive the high-side MOSFET
- Independent input controls; logic-level inputs compatible with 3.3V/5V logic
- Enable input to disable outputs
- Undervoltage lockout (UVLO) on both channels for reliable startup
- Fault/diagnostic outputs and status feedback
- Short-circuit/current-limit protection and shoot-through prevention (dead-time control)
- Fast rise/fall times and low propagation delay for high-speed switching
- Robust, high‑dV gate-drive performance with good noise immunity
- Suitable packaging (SD suffix) and wide temperature range for automotive/industrial use
- Typical applications: DC-DC converters, motor drives, synchronous rectification in half-bridge topologies
Note: exact electrical specs (voltage range, drive current) vary by variant; consult the datasheet for precise numbers.

Package

LM5112SD comes in an 8-pin Small-Outline Integrated Circuit package (SOIC), typically the D-8 package.

Pinout

- Pin count: 8 pins (in the SD package).
- Function: Dual high-side/low-side MOSFET gate driver (bootstrapped).
- Outputs: HO (high-side gate), LO (low-side gate).
- Floating/high-side supply: VB and VS (VB is the bootstrap supply, VS is the switch node).
- Logic inputs: IN1 and IN2 drive HO and LO.
- Power/return: VCC (logic supply) and GND.
- Notes: Requires a bootstrap capacitor between VB and VS; designed to drive a half-bridge of N-channel MOSFETs.

Manufacturer

The LM5112SD is manufactured by Texas Instruments (TI). TI is an American multinational semiconductor company that designs and manufactures a broad range of analog and embedded processing integrated circuits and related solutions.

Application

LM5112SD is a high-speed dual gate driver for N-channel MOSFETs (bootstrapped high-side and low-side). Application areas:
- High-voltage switching power supplies (synchronous buck/boost, PFC, multi-phase VRMs)
- Motor-drive/inverter stages
- Telecom/server/industrial and automotive DC-DC converters
- Solar/inverter power stages
Key features include UVLO, dead-time control, and shoot-through protection.

Equivalent

Equivalent products to LM5112SD (dual high-side/low-side gate driver with bootstrap) include: IR2110S and IR2101/IR2104 (Infineon/International Rectifier); FAN7392/FAN7394 (ON Semiconductor); HIP4081A/HIP4082 (Renesas Intersil); ST L6384/L6386 (STMicroelectronics). Availability depends on voltage/current ratings and packaging; use TI cross-reference or distributor data to confirm pinout compatibility.